In this work, the possibility of using different generations of $\beta$ -Ga ₂ 0 ₃ as an ultra-wide-bandgap power semiconductor device for high power converter applications is explored. The competitiveness of $\beta$ -Ga ₂ 0 ₃ for power converters in still not well quantified, for which the major determining factors are the on-state resistance, $R_{\text{ON}}$ , reverse blocking voltage, $V_{\text{BR}}$ , and the thermal resistance, $R_{\text{th}}$ . We have used the best reported device specifications from literature, both in terms of reports of experimental measurements and potential demonstrated by computer-aided designs, to study power converter performance for different device generations. Modular multilevel converter-based voltage source converters are identified as a topology with significant potential to exploit these device characteristics. The performance of MVDC & HVDC converters based on this topology have been analysed, focusing on system level power losses and case temperature rise at the device level. Comparisons of these $\beta$ -Ga ₂ 0 ₃ devices are made against contemporary SiC-FET and Si-IGBTs. The results have indicated that although the early $\beta$ -Ga ₂ 0 ₃ devices are not competitive to incumbent Si-IGBT and SiC-FET modules, the latest experimental measurements on NiO $_\mathrm{X}$ / $\beta$ -Ga ₂ 0 ₃ and $\beta$ -Ga ₂ 0 ₃ /diamond significantly surpass the performance of incumbent modules. Furthermore, parameters derived from semiconductor-level simulations indicate that the $\beta$ -Ga ₂ 0 ₃ /diamond in superjunction structures delivers even superior performance in these power converters.

中文翻译：

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$\beta$-Ga203 在电力电子转换器中的应用：机遇与挑战

在这项工作中，使用不同代的可能性$\测试版$ -Ga ₂ 0 ₃作为用于高功率转换器应用的超宽带隙功率半导体器件进行了探索。的竞争力$\测试版$ -Ga ₂ 0 ₃对于功率转换器来说还没有很好地量化，其主要决定因素是通态电阻，$R_{\text{ON}}$ ，反向阻断电压，$V_{\text{BR}}$ 和热阻，$R_{\text{第}}$ 。我们使用文献中报告的最佳器件规格（无论是实验测量报告还是计算机辅助设计所展示的潜力）来研究不同器件代的电源转换器性能。基于模块化多电平转换器的电压源转换器被认为是一种具有利用这些器件特性的巨大潜力的拓扑。分析了基于该拓扑的 MVDC 和 HVDC 转换器的性能，重点关注设备级的系统级功率损耗和外壳温升。这些的比较$\测试版$ -Ga ₂ 0 ₃器件是针对当代 SiC-FET 和 Si-IGBT 制造的。结果表明，虽然早期$\测试版$ -Ga ₂ 0 ₃器件与现有的 Si-IGBT 和 SiC-FET 模块不具有竞争力，这是对 NiO 的最新实验测量 $_\mathrm{X}$ / $\测试版$ -Ga ₂ 0 ₃和$\测试版$ -Ga ₂ 0 ₃ /diamond 显着超越现有模块的性能。此外，从半导体级模拟得出的参数表明$\测试版$ 超级结结构中的-Ga ₂ 0 ₃ /金刚石在这些功率转换器中提供了更优越的性能。