Controlling the growth direction of one-dimensional (1D) nanostructures is crucial for their resulting applications. In this work, the growth of MoO₂ nanobelts was directed into three directions on a flat C-plane sapphire and one direction on an annealed M-plane sapphire, respectively. Structural characterizations show that these MoO₂ nanobelts have high crystal quality and grow epitaxially along a consistent [010] crystallographic orientation. UV–visible absorption spectra indicate that these self-oriented MoO₂ nanobelts have a large intrinsic band gap of 3.9 eV. Angle-resolved polarized Raman spectra confirm that these nanobelts exhibit remarkable anisotropic properties. In situ conductivity measurements show that these MoO₂ nanobelts have a high conductivity of 1.6 × 10³ S/cm. Last, two self-assembly models are proposed for the horizontally oriented growth of these MoO₂ nanobelts. These horizontally oriented MoO₂ nanobelts are promising for potential applications in various new micro/nanophotonic and electronic devices.

中文翻译：

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蓝宝石上高导电 MoO2 纳米带的水平定向生长

控制一维（1D）纳米结构的生长方向对于其最终应用至关重要。在这项工作中，MoO ₂纳米带的生长分别在平坦的C面蓝宝石上定向为三个方向，在退火的M面蓝宝石上分别定向为一个方向。结构表征表明这些MoO ₂纳米带具有高晶体质量并且沿着一致的[010]晶体取向外延生长。紫外可见吸收光谱表明这些自取向MoO ₂纳米带具有3.9 eV的大本征带隙。角度分辨偏振拉曼光谱证实这些纳米带表现出显着的各向异性特性。原位电导率测量表明这些MoO _{2纳米带具有1.6×10} ³ S/cm的高电导率。最后，提出了两种MoO ₂纳米带水平定向生长的自组装模型。这些水平取向的MoO ₂纳米带在各种新型微/纳米光子和电子器件中具有潜在的应用前景。