In recent years, Sn(IV)-based inorganic-organic metal halides and their doped compounds have attracted much attentions due to their excellent luminescence properties and good stabilities. However, their concrete performance in materials and devices still strongly depends upon the organic molecular structure and relevant mechanisms. Here, a series of Sb-doped 0D Sn(IV)-based halides (CHP)SnCl:x% Sb were synthesized by the antisolvent vapor diffusion technique, showing improved luminescence properties and wavelength-dependent emission character. (CHP)SnCl:20% Sb exhibits an efficient warm white emission, which possesses dual bands at 481 and 637 nm with a photoluminescence quantum yield (PLQY) of 99.2%, at the 320 nm excitation. Moreover, it also gives efficient orange-red emission band at 637 nm with PLQY of 97.1% at the 365 nm excitation. In this 0D Sn(IV) compound, Sb doping tends to form [SbCl], whose high-energy emission band at 481 nm is from the self-trapped exciton (STE) out of the Sb singlet, and low energy orange-red emission band at 637 nm from the STE out of the Sb triplet. The latter is also accompanied with a DAP (donor-acceptor pair) transition between neighbouring SbCl and SnCl clusters. Their tunable and bright emission and excellent stability of (CHP)SnCl:20% Sb suit for a single-component WLED with warm white light emission as well as an information encryption system as shown.

中文翻译：

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用于固态照明和信息加密的 Sb3+ 掺杂空气稳定 Sn(IV) 基金属卤化物中的可调谐高效白光发射

近年来，Sn(IV)基无机-有机金属卤化物及其掺杂化合物由于其优异的发光性能和良好的稳定性而备受关注。然而，它们在材料和器件中的具体性能仍然很大程度上取决于有机分子结构和相关机制。在这里，通过反溶剂蒸气扩散技术合成了一系列掺锑的 0D Sn(IV) 基卤化物 (CHP)SnCl:x% Sb，显示出改进的发光性能和波长依赖性发射特性。 (CHP)SnCl:20% Sb 表现出高效的暖白光发射，在 481 和 637 nm 处具有双波段，在 320 nm 激发下光致发光量子产率 (PLQY) 为 99.2%。此外，它还在 637 nm 处提供高效的橙红色发射带，在 365 nm 激发下 PLQY 为 97.1%。在这种0D Sn(IV)化合物中，Sb掺杂倾向于形成[SbCl]，其481 nm处的高能发射带来自Sb单线态的自陷激子（STE），低能橙红色发射来自 Sb 三重态的 STE 的 637 nm 处的带。后者还伴随着相邻 SbCl 和 SnCl 团簇之间的 DAP（供体-受体对）转变。 (CHP)SnCl:20% Sb 的可调谐和明亮发射以及出色的稳定性适用于具有暖白光发射的单组件 WLED 以及如图所示的信息加密系统。