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A Threshold Voltage Deviation Monitoring Scheme of Bit Transistors in 6T SRAM for Manufacturing Defects Detection
IEEE Transactions on Semiconductor Manufacturing ( IF 2.7 ) Pub Date : 2024-04-11 , DOI: 10.1109/tsm.2024.3387050 Rui Liu 1 , Hao Li 1 , Zhao Yang 1 , Guantao Wang 1 , Zefu Chen 2 , Peiyong Zhang 1
中文翻译：
用于制造缺陷检测的6T SRAM位晶体管阈值电压偏差监测方案
更新日期：2024-04-11
IEEE Transactions on Semiconductor Manufacturing ( IF 2.7 ) Pub Date : 2024-04-11 , DOI: 10.1109/tsm.2024.3387050 Rui Liu 1 , Hao Li 1 , Zhao Yang 1 , Guantao Wang 1 , Zefu Chen 2 , Peiyong Zhang 1
Affiliation
中文翻译：
用于制造缺陷检测的6T SRAM位晶体管阈值电压偏差监测方案
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