In this article, the homoepitaxial regrowth of AlGaN on AlGaN templates fabricated via chemical mechanical polishing (CMP) on periodically aligned AlN nanopillars is reported on. These templates are lattice relaxed according to X‐Ray diffraction reciprocal space mapping measurements, with a low dislocation density of ≈3 × 108 cm−2. However, the AlGaN surface has hillocks exceeding 104 cm−2. Contrastingly, no hillocks are observed on the homoepitaxially regrown AlGaN on the CMP–AlGaN template and after the UV‐B laser diode (LD) layer structure is crystallized and grown on the homoepitaxially regrown AlGaN. Furthermore, when this wafer is processed for LD fabrication, room‐temperature pulsed oscillation is confirmed in the UV‐B region at a wavelength of 296 nm. The turn‐on voltage and operating voltage also reduce by ≈2 V.

中文翻译：

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化学机械抛光制备的 AlGaN 模板上 AlGaN 的同质外延再生长及其在 UV-B 激光二极管中的应用

在本文中，报道了通过化学机械抛光 (CMP) 在周期性排列的 AlN 纳米柱上制造的 AlGaN 模板上的 AlGaN 的同质外延再生长。根据 X 射线衍射倒易空间映射测量，这些模板是晶格弛豫的，位错密度较低，约为 3 × 108厘米−2。然而，AlGaN表面有超过10个的小丘4厘米−2。相比之下，在 CMP-AlGaN 模板上的同质外延再生长的 AlGaN 上以及在同质外延再生长的 AlGaN 上结晶并生长 UV-B 激光二极管 (LD) 层结构后，没有观察到小丘。此外，当该晶圆被加工用于 LD 制造时，在波长 296 nm 的 UV-B 区域中确认了室温脉冲振荡。开启电压和工作电压也降低了约2V。