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Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-12 , DOI: 10.1109/ted.2024.3386508 Zuocheng Cai 1 , Kasidit Toprasertpong 1 , Zhenhong Liu 1 , Mitsuru Takenaka 1 , Shinichi Takagi 1
中文翻译：
了解 Si FeFET 中的 HZO 厚度缩放：低工作电压、快速唤醒和抑制电荷捕获
更新日期：2024-04-12
IEEE Transactions on Electron Devices ( IF 3.1 ) Pub Date : 2024-04-12 , DOI: 10.1109/ted.2024.3386508 Zuocheng Cai 1 , Kasidit Toprasertpong 1 , Zhenhong Liu 1 , Mitsuru Takenaka 1 , Shinichi Takagi 1
Affiliation
中文翻译：
了解 Si FeFET 中的 HZO 厚度缩放：低工作电压、快速唤醒和抑制电荷捕获
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