Wide bandgap (WBG) and ultrawide bandgap (UWBG) semiconductors in n‐type metal–oxide–semiconductor (n‐MOS) integrated circuits (ICs) are increasingly being explored for their potential applications in the rapidly developing field of electronics. This review comprehensively examines the role of n‐MOS inverters underpinned by WBG and UWBG semiconductors and their application possibilities. It delves into various n‐MOS inverter topologies, including resistive, enhancement or diode‐load, depletion‐load, and pseudo‐complementary MOS inverter topologies. Each topology's operational principles, unique advantages, and potential performance are elucidated in detail. Finally, these topologies are simulated using the Advanced Design System software for a fair comparison between various topologies. The literature and simulation results show that the pseudo‐D topology has the best gain and improved noise margin. The review methodology involves an extensive exploration of WBG/UWBG n‐MOS inverters to advance the current understanding of WBG/UWBG n‐MOS‐based ICs.

中文翻译：

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基于宽禁带和超宽带隙半导体的单片n型金属氧化物半导体逆变器集成电路

人们越来越多地探索 n 型金属氧化物半导体 (n-MOS) 集成电路 (IC) 中的宽带隙 (WBG) 和超宽带隙 (UWBG) 半导体在快速发展的电子领域的潜在应用。本综述全面探讨了以 WBG 和 UWBG 半导体为基础的 n-MOS 逆变器的作用及其应用可能性。它深入研究了各种 n-MOS 逆变器拓扑，包括电阻式、增强型或二极管负载、耗尽负载和伪互补 MOS 逆变器拓扑。详细阐述了每种拓扑的工作原理、独特优势和潜在性能。最后，使用先进设计系统软件对这些拓扑进行仿真，以便对各种拓扑进行公平比较。文献和仿真结果表明，伪D拓扑具有最佳增益和改善的噪声容限。审查方法涉及对 WBG/UWBG n-MOS 逆变器的广泛探索，以增进当前对基于 WBG/UWBG n-MOS 的 IC 的理解。