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Polar and layered wide-bandgap semiconductorsWO2Cl2andMoO2Br2with giant birefringence, large second harmonic and ferroelectric photovoltaic effects
Physical Review B ( IF 3.7 ) Pub Date : 2024-04-16 , DOI: 10.1103/physrevb.109.155421
Hao Huo , Xiao Jiang , Lei Kang

van der Waals (vdW) layered semiconductors exhibiting large nonlinear-optical (NLO) effects have substantial potential for developing nanoscale quantum optical devices. NbOCl2, an ultrathin quantum light source, has recently displayed a large second harmonic effect. However, its small bandgap (∼1.8 eV) impedes transparent light conversion across wide spectral regions, especially when utilizing practical 1-µm lasers. In this paper, we found that MO2X2 (M=W, Mo; X=Cl, Br) effectively widens the bandgap by using W6+ or Mo6+ instead of Nb4+ to eliminate in-gap nonbonding orbitals. Meanwhile, the octahedral [MO4X2] motifs display polar Jahn-Teller distortions as large as [NbO2X4] to demonstrate comparable NLO polarization effects. Based on first-principles calculations, WO2Cl2 and MoO2Br2 are predicted to possess wider bandgaps (2.9 and 2.2 eV), giant birefringence (0.5–0.7), and significant second harmonic and ferroelectric photovoltaic effects competitive with NbOX2. These findings provide strong incentives to explore new vdW materials with superior NLO properties.

中文翻译:

具有大双折射、大二次谐波和铁电光伏效应的极性和层状宽带隙半导体WO2Cl2和MoO2Br2

范德华(vdW)层状半导体表现出巨大的非线性光学(NLO)效应,具有开发纳米级量子光学器件的巨大潜力。氯化铌2一种超薄量子光源,最近表现出巨大的二次谐波效应。然而,其带隙较小(~1.8 eV)阻碍了宽光谱区域的透明光转换,特别是在使用实用的 1 µm 激光器时。在这篇论文中,我们发现中号2X2 中号=, ; X=, 通过使用有效地加宽带隙6+或者中号6+代替4+消除带隙内的非键合轨道。同时,八面体[中号4X2]图案显示极性 Jahn-Teller 扭曲高达[氧化铌2X4]展示可比较的 NLO 偏振效应。根据第一性原理计算,22氧化钼22预计具有更宽的带隙(2.9 和 2.2 eV)、巨大的双折射(0.5-0.7)以及显着的二次谐波和铁电光伏效应,可与氧化铌X2。这些发现为探索具有优异 NLO 性能的新型 vdW 材料提供了强有力的动力。
更新日期:2024-04-16
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