There is an increasing desire to utilize complex functional electronic materials such as ferroelectrics in next-generation microelectronics. As new materials are considered or introduced in this capacity, an understanding of how we can process these materials into those devices must be developed. Here, the effect of different fabrication processes on the ferroelectric and related properties of prototypical metal oxide (SrRuO3)/ferroelectric (BaTiO3)/metal oxide (SrRuO3) heterostructures is explored. Two different types of etching processes are studied, namely, wet etching of the top SrRuO3 using a NaIO4 solution and dry etching using an Ar+-ion beam (i.e., ion milling). Polarization-electric-field hysteresis loops for capacitors produced using both methods are compared. For the ion-milling process, it is found that the Ar+ beam can introduce defects into the SrRuO3/BaTiO3/SrRuO3 devices and that the milling depth strongly influences the defect level and can induce a voltage imprint on the function. Realizing that such processing approaches may be necessary, work is performed to ameliorate the imprint of the hysteresis loops via ex situ “healing” of the process-induced defects by annealing the ferroelectric material in a barium-and-oxygen-rich environment via a chemical-vapor-deposition-style process. This work provides a pathway for the nanoscale fabrication of these candidate materials for next-generation memory and logic applications.

中文翻译：

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制造工艺对 BaTiO3 电容器性能的影响

人们越来越希望在下一代微电子学中利用复杂的功能电子材料，例如铁电体。当新材料被考虑或引入时，我们必须了解如何将这些材料加工成这些设备。在这里，探讨了不同制造工艺对原型金属氧化物（SrRuO3）/铁电（BaTiO3）/金属氧化物（SrRuO3）异质结构的铁电和相关性能的影响。研究了两种不同类型的蚀刻工艺，即使用NaIO4溶液对顶部SrRuO3进行湿法蚀刻和使用Ar+离子束进行干法蚀刻（即离子铣削）。比较了使用两种方法生产的电容器的极化电场磁滞回线。对于离子铣削过程，我们发现Ar+束可以在SrRuO3/BaTiO3/SrRuO3器件中引入缺陷，并且铣削深度强烈影响缺陷水平并且可以在功能上引起电压印记。认识到这种处理方法可能是必要的，通过在富含钡和氧的环境中通过化学物质对铁电材料进行退火，对工艺引起的缺陷进行异位“修复”，从而改善磁滞回线的印记。 -气相沉积式工艺。这项工作为下一代存储器和逻辑应用的这些候选材料的纳米级制造提供了途径。