The study presents a novel, one-pot, and scalable solid-state reaction scheme to prepare bismuth sulphide (Bi₂S₃)-reduced graphene oxide (rGO) nanocomposites using bismuth oxide (Bi₂O₃), thiourea (TU), and graphene oxide (GO) as starting materials for energy storage applications. The impact of GO loading concentration on the electrochemical performance of the nanocomposites was investigated. The reaction follows a diffusion substitution pathway, gradually transforming Bi₂O₃ powder into Bi₂S₃ nanostrips, concurrently converting GO into rGO. Enhanced specific capacitances were observed across all nanocomposite samples, with the Bi₂S₃@0.2rGO exhibiting the highest specific capacitance of 705 F g⁻¹ at a current density of 1 A g⁻¹ and maintaining a capacitance retention of 82% after 1000 cycles. The superior specific capacitance is attributed to the excellent homogeneity and synergistic relation between rGO and Bi₂S₃ nanostrips. This methodology holds promise for extending the synthesis of other chalcogenides-rGO nanocomposites.

中文翻译：

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Bi2S3/rGO 纳米带的固态工程：一种用于储能应用的优异电极材料

该研究提出了一种新颖的、一锅式、可扩展的固态反应方案，_{使用氧化铋（Bi 2 O 3}）_、硫_脲（TU）、和氧化石墨烯（GO）作为储能应用的起始材料。研究了GO负载浓度对纳米复合材料电化学性能的影响。该反应遵循扩散取代途径，逐渐将Bi ₂ O ₃粉末转化为Bi ₂ S ₃纳米带，同时将GO转化为rGO。所有纳米复合材料样品均观察到比电容增强，其中 Bi ₂ S _{3 @0.2rGO 在 1 A g} ^-1的电流密度下表现出最高比电容 705 F g ^-1，并在 1000 次后保持 82% 的电容保持率循环。优异的比电容归因于rGO和Bi ₂ S ₃纳米带之间优异的均匀性和协同关系。该方法有望扩展其他硫属化物-rGO纳米复合材料的合成。