Abstract

The results of an experimental study of the real structure of thin films of κ-phase gallium oxide are reported. It has been established by electron backscattering diffraction in a scanning electron microscope and by transmission electron microscopy that gallium oxide single microcrystals consist of three types of rotating domains of the orthorhombic symmetry, which are rotated relative to each other around the growth axis by an angle of 120°. Single-crystal domains are characterized by a high density of straight antiphase boundaries, which, when intersecting, form a significant fraction of the domain wall structure.

中文翻译：

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氧化镓κ相的畴结构和反相边界

摘要

报告了 κ 相氧化镓薄膜真实结构的实验研究结果。通过扫描电子显微镜中的电子背散射衍射和透射电子显微镜证实，氧化镓单微晶由三种类型的斜方对称旋转域组成，它们绕生长轴相对于彼此旋转角度为120°。单晶磁畴的特点是高密度的直反相边界，当它们相交时，形成磁畴壁结构的重要部分。