Herein, we report on the post-annealing temperature effect on the transport behavior of p-CuO/Al Schottky barrier diodes. In addition, the transformation of phase from Cu₄O₃ to CuO phase was studied. Copper oxide thin films were grown on soda lime glass substrates, and post-annealing temperature's influence on the films’ structural, chemical, morphological, and electrical characteristics was comprehensively examined. X-ray diffraction study revealed the development of polycrystalline tenorite phase (CuO) on annealing. Raman analysis also confirmed the formation of the tenorite phase (CuO) at higher annealing temperatures (400 °C and 500 °C). XPS study revealed the occurrence of the Cu₄O₃ phase for room temperature deposited sample and CuO phase at the higher annealing temperature. Using current–voltage analysis, the Chueng model, and the thermoelectric emission model, the Schottky behavior between the metal and semiconductor were investigated. The fabricated diode showed a rectification ratio of 10³ at ± 2 V, with the barrier height ranging from 0.84 to 1.12 eV due to different annealing treatments. The attributes of the power law were employed to elucidate space charge-limited conduction and the process of tunneling across the density of interface traps in p-CuO/Al Schottky diodes. This study provides valuable insights into the behavior of the p-CuO/Al Schottky junction, enhancing our understanding of its characteristics.

在此，我们报告了退火后温度对 p-CuO/Al 肖特基势垒二极管输运行为的影响。此外，还研究了从Cu ₄ O ₃相到CuO相的转变。在钠钙玻璃基板上生长氧化铜薄膜，并综合研究了后退火温度对薄膜结构、化学、形貌和电学特性的影响。 X 射线衍射研究揭示了退火过程中多晶镁钠长石相 (CuO) 的形成。拉曼分析还证实了在较高的退火温度（400 °C 和 500 °C）下会形成网状长石相 (CuO)。 XPS研究揭示了室温沉积样品中出现了Cu ₄ O ₃相，并且在较高的退火温度下出现了CuO相。使用电流-电压分析、Chueng 模型和热电发射模型，研究了金属和半导体之间的肖特基行为。所制造的二极管在±2V时表现出10 ³的整流比，由于不同的退火处理，势垒高度范围为0.84至1.12eV。幂律的属性被用来阐明空间电荷限制传导和穿过 p-CuO/Al 肖特基二极管中界面陷阱密度的隧道过程。这项研究为 p-CuO/Al 肖特基结的行为提供了宝贵的见解，增强了我们对其特性的理解。