Piezoelectric semiconductor materials possess a unique combination of piezoelectric and semiconductor effects, exhibiting multifaceted coupling properties such as electromechanical, acoustic, photoelectric, photovoltaic, thermal, and thermoelectric capabilities. This study delves into the anti-plane mechanical model of an interface crack between a strip of piezoelectric semiconductor material and an elastic material. By introducing two boundary conditions, the mixed boundary value problem is reformulated into a set of singular integral equations with a Cauchy kernel. The details of carrier concentration, current density, and electric displacement near the crack are provided in a numerical analysis. The findings reveal that the distribution of the current density, carrier concentration, and electric displacement is intricately influenced by the doping concentration of the piezoelectric semiconductor. Moreover, the presence of mechanical and electric loads can either expedite or decelerate the growth of the crack, highlighting the pivotal role of external stimuli in influencing material behavior.

中文翻译：

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压电半导体涂层与弹性基体结构界面裂纹分析

压电半导体材料具有压电效应和半导体效应的独特组合，表现出机电、声学、光电、光伏、热和热电能力等多方面的耦合特性。这项研究深入研究了压电半导体材料带和弹性材料之间界面裂纹的反平面力学模型。通过引入两个边界条件，混合边值问题被重新表述为一组带有柯西核的奇异积分方程。数值分析中提供了裂纹附近的载流子浓度、电流密度和电位移的详细信息。研究结果表明，电流密度、载流子浓度和电位移的分布受到压电半导体掺杂浓度的复杂影响。此外，机械和电力负载的存在可以加速或减缓裂纹的生长，凸显了外部刺激在影响材料行为方面的关键作用。