arising from Liu, A. et al. Nature Electronics https://doi.org/10.1038/s41928-022-00712-2 (2022)

Accurate experimental determination of the charge carrier mobility (μ) is crucial for developing new electronic devices. Recently, Liu et al.¹ reported perovskite field-effect transistors (FETs) based on solution-coated nanocrystalline CsSnI₃ films, with field-effect mobilities (μ_FET) up to 55 cm² V⁻¹ s⁻¹ and Hall effect measurements with mobilities (μ_Hall) up to 486 cm² V⁻¹ s⁻¹. However, several issues regarding the FET and Hall measurements suggest overestimated mobilities, in particular the nonlinear, noisy and hysteretic FET characteristics, a three-orders-of-magnitude disagreement between the Hall and FET carrier densities, and the high excitation current and Joule power densities applied in these devices.

源自Liu, A. 等人。自然电子https://doi.org/10.1038/s41928-022-00712-2 (2022)

载流子迁移率 ( μ ) 的准确实验测定对于开发新型电子器件至关重要。最近，刘等人。^{1报道了基于溶液涂覆的纳米晶 CsSnI} ₃薄膜的钙钛矿场效应晶体管 (FET) ，场效应迁移率 ( μ _FET ) 高达 55 cm ²  V ^-1  s ^-1以及霍尔效应迁移率测量 ( μ _Hall )高达486 cm ²  V ^-1  s ^-1。然而，有关 FET 和霍尔测量的几个问题表明高估了迁移率，特别是非线性、噪声和迟滞 FET 特性，霍尔和 FET 载流子密度之间存在三个数量级的差异，以及高激励电流和焦耳功率这些设备中应用的密度。