Photodetector based on all-inorganic CsPbCl perovskite is drawing increasing interest owing to its stable chemical properties, suitable band gap and superior inherent optoelectronic properties. However, most of the perovskite detectors are fabricated from polycrystalline films with a number of grain boundaries and defects which would decline the device performance. At the same time, the performance of the device is sacrificed by the presence of a large amount of gaps between the metal electrodes and the material. Here, a high detective photodetector is demonstrated based on CsPbCl crystals by liquid-phase growth on pre-patterned Au electrodes. Heterojunctions fabricated by liquid-phase self-assembly synthesis form an embedded structure between metal electrodes and the material, which greatly enhances the contact area and reduces the dark current. The device serves as photodetectors with a responsivity of 62.5 μA/W and detectivity up to 1.79 × 10 Jones. Furthermore, these devices exhibit outstanding performance of field-effect transistors with a remarkable on/off ratio of 10. These results offer novel insights for the exploration of high-performance photodetectors based on all-inorganic perovskite materials.

中文翻译：

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基于 CsPbCl3/Au 异质结构的高探测率光电探测器

基于全无机CsPbCl钙钛矿的光电探测器由于其稳定的化学性质、合适的带隙和优异的固有光电性质而引起越来越多的关注。然而，大多数钙钛矿探测器是由多晶薄膜制成的，具有许多晶界和缺陷，这会降低器件的性能。同时，金属电极和材料之间存在大量间隙，从而牺牲了器件的性能。在这里，通过在预先图案化的金电极上进行液相生长，展示了基于 CsPbCl 晶体的高探测光电探测器。通过液相自组装合成制备的异质结在金属电极和材料之间形成嵌入结构，大大增强了接触面积并减少了暗电流。该器件用作光电探测器，响应率为 62.5 μA/W，探测灵敏度高达 1.79 × 10 Jones。此外，这些器件表现出出色的场效应晶体管性能，开/关比高达10。这些结果为探索基于全无机钙钛矿材料的高性能光电探测器提供了新颖的见解。