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The elasticity and piezoelectricity of AlN containing charged vacancies
International Journal of Optomechatronics ( IF 5.5 ) Pub Date : 2024-04-16 , DOI: 10.1080/15599612.2024.2332242 Qiaoya Lv 1, 2, 3, 4 , Jian Qiu 1, 2 , Quan Wen 1, 2
International Journal of Optomechatronics ( IF 5.5 ) Pub Date : 2024-04-16 , DOI: 10.1080/15599612.2024.2332242 Qiaoya Lv 1, 2, 3, 4 , Jian Qiu 1, 2 , Quan Wen 1, 2
Affiliation
Wurtzite aluminum nitride (w-AlN) piezoelectric film plays a key role in modern MEMS actuators and sensors. Density functional theory can be used to predict the elastic and piezoelectric properties...
中文翻译：
含带电空位的AlN的弹性和压电性
纤锌矿氮化铝 (w-AlN) 压电薄膜在现代 MEMS 执行器和传感器中发挥着关键作用。密度泛函理论可用于预测弹性和压电特性...
更新日期：2024-04-18
中文翻译：
含带电空位的AlN的弹性和压电性
纤锌矿氮化铝 (w-AlN) 压电薄膜在现代 MEMS 执行器和传感器中发挥着关键作用。密度泛函理论可用于预测弹性和压电特性...
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