The purpose of this work is to provide a novel perspective for investigating the damage of diamond surfaces implanted by MeV phosphorus (P) ions and recovery of the surfaces after high-temperature annealing. SRIM simulation and low-temperature luminescence spectroscopy were performed to analyze the properties of the samples comprehensively. The results revealed that a certain degree of diamond lattice damage was caused without graphitization by the irradiation of 1 MeV P ions with a fluence value of 10 ions/cm. The SRIM simulation revealed that the ions that were implanted into the lattice collided with carbon atoms. These ions stopped at a depth of approximately 0.55 μm and generated intrinsic diamond defects on the diamond near the surface. The simulated defects were confirmed by the appearance of neutral single vacancy (GR1) centers in the photoluminescence (PL) spectrum after annealing at 400 °C. In addition, the annealing behavior of optical centers at 900 °C indicated significant damage recovery, including the disappearance of GR1 centers, combined with the increased intensity, slightly blue-shifted peak position, and narrowed FWHM of the nitrogen-vacancy (NV) center.

中文翻译：

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MeV磷离子注入低氮金刚石近表面损伤及恢复

这项工作的目的是为研究 MeV 磷 (P) 离子注入金刚石表面的损伤以及高温退火后表面的恢复提供新的视角。通过SRIM模拟和低温发光光谱对样品的性能进行了综合分析。结果表明，在注量值为10 ions/cm、1 MeV P离子照射下，未石墨化的金刚石晶格受到一定程度的损伤。 SRIM 模拟表明，注入晶格的离子与碳原子发生碰撞。这些离子停留在大约 0.55 μm 的深度，并在表面附近的金刚石上产生固有的金刚石缺陷。 400°C 退火后，光致发光 (PL) 光谱中出现中性单空位 (GR1) 中心，证实了模拟缺陷。此外，光学中心在 900 °C 下的退火行为表明显着的损伤恢复，包括 GR1 中心的消失，以及氮空位 (NV) 中心的强度增加、峰位置轻微蓝移以及变窄的半高宽。