Magnetic skyrmions are topological magnetic textures that hold great promise as nanoscale bits of information in memory and logic devices. Although room-temperature ferromagnetic skyrmions and their current-induced manipulation have been demonstrated, their velocity has been limited to about 100 meters per second. In addition, their dynamics are perturbed by the skyrmion Hall effect, a motion transverse to the current direction caused by the skyrmion topological charge. Here, we show that skyrmions in compensated synthetic antiferromagnets can be moved by current along the current direction at velocities of up to 900 meters per second. This can be explained by the cancellation of the net topological charge leading to a vanishing skyrmion Hall effect. Our results open an important path toward the realization of logic and memory devices based on the fast manipulation of skyrmions in tracks.

中文翻译：

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合成反铁磁体中快速电流感应斯格明子运动

磁性斯格明子是拓扑磁性纹理，作为存储器和逻辑器件中的纳米级信息位具有广阔的前景。尽管室温铁磁斯格明子及其电流感应操纵已被证明，但它们的速度仅限于每秒 100 米左右。此外，它们的动力学受到斯格明子霍尔效应的干扰，斯格明子霍尔效应是由斯格明子拓扑电荷引起的横向于电流方向的运动。在这里，我们证明了补偿合成反铁磁体中的斯格明子可以通过电流沿电流方向以高达每秒 900 米的速度移动。这可以通过净拓扑电荷的抵消导致斯格明子霍尔效应消失来解释。我们的结果为实现基于轨道中斯格明子的快速操纵的逻辑和存储设备开辟了一条重要途径。