The success in synthesizing light-emitting lead-based halide perovskites from cesium halides (CsX, X: I, Br, and Cl) has stimulated great interests in the applications of halide perovskites and in the development of lead-free halide perovskites and related light-emitting materials. In this work, we explore the feasibility of synthesizing Sn-doped CsX powders (microcrystals) via mechanochemical processing and investigate the optical characteristics of the prepared Sn-doped CsX powders. The prepared Sn-doped CsX powders emit light with ultra-wide emission peak under UV light of 365 nm in wavelength, which is attributed to self-trapped exciton emission. The emission peak intensity decreases with the increase in temperature in the Sn-doped CsXs due to thermal quenching. The characterization of the optoelectronic response of the prepared Sn-doped CsX powders reveals that the current intensity passing through the Sn-doped CsX powders decreases with the increase of the intensity of the incident white light under the same applied voltage. Light emitting diodes are constructed from the prepared Sn-doped CsX powders and exhibit an ultra-wide spectrum spanning the range of entire visible light. The method presented in this provides a simple technique to prepare light-emitting materials of Sn-doped CsXs via mechanochemical process.

中文翻译：

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机械化学制备的发光Sn掺杂CsX（X=Cl、Br、I）材料

由卤化铯（CsX、X:I、Br和Cl）成功合成发光铅基卤化物钙钛矿，激发了人们对卤化物钙钛矿的应用以及无铅卤化物钙钛矿及相关光的开发的极大兴趣-发射材料。在这项工作中，我们探索了通过机械化学加工合成Sn掺杂CsX粉末（微晶）的可行性，并研究了所制备的Sn掺杂CsX粉末的光学特性。所制备的Sn掺杂CsX粉末在波长365 nm的紫外光下发出超宽发射峰的光，这归因于自俘获激子发射。由于热猝灭，Sn 掺杂 CsXs 的发射峰强度随着温度的升高而降低。所制备的Sn掺杂CsX粉末的光电响应表征表明，在相同的外加电压下，通过Sn掺杂CsX粉末的电流强度随着入射白光强度的增加而减小。发光二极管由制备的 Sn 掺杂 CsX 粉末构成，具有跨越整个可见光范围的超宽光谱。本文提出的方法提供了一种通过机械化学过程制备 Sn 掺杂 CsXs 发光材料的简单技术。