Increasing the active site of redox reactions on the surface of photocatalysts and accelerating the separation and transfer of photogenerated electron-hole pairs are effective methods to improve the hydrogen evolution of composite photocatalysts. Non-precious metal Ni photo-deposition is anchored in situ on the ZnIn₂S₄ surface to generate the cocatalyst Ni(OH)₂, which improves the photocatalytic hydrogen evolution performance of the composite sample. Under visible light irradiation, the ZnIn₂S₄ semiconductor stimulates photon-generated carriers. Ni²⁺ acts as the defect center of photogenerated electron-hole pairs to promote the separation of carriers. It serves as the capture site of light-generated holes to reduce the carrier recombination rate so that the light-generated electrons on the ZnIn₂S₄ surface promote H⁺ reduction in H₂. Ni(OH)₂ provides the active site for oxidation reaction on the surface of semiconductor materials, allowing the carrier to be consumed faster and improving the photocatalytic stability of semiconductor materials. The addition of 2 wt% Ni²⁺ resulted in a hydrogen evolution rate of 10 066 µmol·g⁻¹ ·h⁻¹ for ZnIn₂S₄/Ni(OH)₂, which was 2.5 times higher than that of pure ZnIn₂S₄. This paper presents a reference case for enhancing the stability of sulfide to promote its photocatalytic hydrogen evolution.

中文翻译：

---

轻松光沉积 Ni(OH)2 锚定 ZnIn2S4 作为有效的 1D/2D 异质结，用于光催化析氢

增加光催化剂表面氧化还原反应的活性位点、加速光生电子-空穴对的分离和转移是提高复合光催化剂析氢的有效方法。非贵金属Ni光沉积原位固定在ZnIn ₂ S ₄表面上生成助催化剂Ni(OH) ₂，提高了复合材料样品的光催化析氢性能。在可见光照射下，ZnIn ₂ S ₄半导体激发光子生载流子。 Ni ²⁺作为光生电子-空穴对的缺陷中心，促进载流子的分离。它作为光生空穴的捕获位点，降低载流子复合率，从而ZnIn ₂ S ₄表面上的光生电子促进H _2中的H ⁺还原。 Ni(OH) ₂为半导体材料表面的氧化反应提供活性位点，使载流子更快消耗，提高半导体材料的光催化稳定性。添加2 wt% Ni ²⁺后ZnIn ₂ S ₄ /Ni(OH) ₂的析氢速率达到10 066 µmol·g ^-1 ·h ^{-1 ，是纯ZnIn} ₂的2.5倍。S ₄ .本文提出了增强硫化物稳定性以促进其光催化析氢的参考案例。