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Moiré semiconductors on the twisted bilayer dice lattice
Physical Review B ( IF 3.7 ) Pub Date : 2024-04-23 , DOI: 10.1103/physrevb.109.155159
Di Ma , Yu-Ge Chen , Yue Yu , Xi Luo

We propose an effective lattice model for the moiré structure of the twisted bilayer dice lattice. In the chiral limit, we find that there are flat bands at the zero-energy level at any twist angle besides the magic ones and these flat bands are broadened by small perturbation away from the chiral limit. The flat bands contain both bands with zero Chern number which originate from the destructive interference of the states on the dice lattice and the topological nontrivial bands at the magic angle. The existence of the flat bands can be detected from the peak-splitting structure of the optical conductance at all angles, while the transition peaks do not split and only occur at magic angles in twisted bilayer graphene.

中文翻译:

扭曲双层晶粒晶格上的莫尔半导体

我们提出了一种用于扭曲双层骰子晶格的莫尔结构的有效晶格模型。在手性极限中,我们发现除了魔能带之外,在任何扭转角度都存在零能级的平带,并且这些平带由于远离手性极限的小扰动而变宽。平能带包含陈数为零的能带(源自骰子晶格上态的相消干涉)和魔角处的拓扑非平凡能带。平带的存在可以从所有角度的光导的峰分裂结构中检测到,而过渡峰不会分裂,仅出现在扭曲双层石墨烯的魔角处。
更新日期:2024-04-23
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