We experimentally demonstrate the concept of combination-encoding content-addressable memory (CECAM) that offers much higher content density than any other content-addressable memory devices proposed to date. In this work, CECAM was fabricated and validated with a hafnium-zirconium oxide (HZO) ferroelectric tunnel junction (FTJ) crossbar array. The new CAM structure, which utilizes nonvolatile memory devices, offers numerous advantages including low-current operation (FTJ), standby power reduction (ferroelectric HZO), and increased content density. Multibit data are encoded and stored in multi-switch CECAM. Perfect-match searching in CECAM with a reasonable match current (lower than nA) for different sizes of CECAM has been validated from a novel CAM device. We demonstrate N-CECAM (with keys encoded into 2N-long binary arrays) for N = 3 (using 6 FTJs) and 4 (using 8 FTJs), leading to content densities of 0.667 and 0.75 bits per switch, which highlight 33% and 50% increase in content density compared to that of the conventional TCAM (0.5 bits per switch)

中文翻译：

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利用 Hf-Zr-O 铁电隧道结的组合编码内容可寻址存储器（每个开关 0.75 位）的实验演示

我们通过实验证明了组合编码内容可寻址存储器（CECAM）的概念，它提供了比迄今为止提出的任何其他内容可寻址存储器设备更高的内容密度。在这项工作中，CECAM 使用铪锆氧化物 (HZO) 铁电隧道结 (FTJ) 横杆阵列进行制造和验证。新的 CAM 结构采用非易失性存储器件，具有众多优势，包括低电流操作 (FTJ)、降低待机功耗（铁电 HZO）和增加内容密度。多位数据被编码并存储在多开关CECAM中。 CECAM 中的完美匹配搜索，对于不同尺寸的 CECAM 具有合理的匹配电流（低于 nA），已通过新型 CAM 设备得到验证。我们演示了N -CECAM（将密钥编码为 2 N长的二进制数组），其中N = 3（使用 6 个 FTJ）和 4（使用 8 个 FTJ），导致每个开关的内容密度为 0.667 和 0.75 位，突出显示了 33%与传统 TCAM 相比，内容密度增加 50%（每个开关 0.5 位）