We study thermoelectric and transport properties of armchair nanoribbon doped with impurity atoms in the context of tight binding model hamiltonian. The effect of scattering by dilute charged impurities is discussed in terms of the self-consistent Born approximation. Green’s function approach has been implemented to find the behavior of density of states, transport and Seebeck coefficient of armchair nanoribbon within linear response theory. We have found the temperature dependence of electrical and thermal conductivities for different values of impurity concentration and scattering strength of dopant impurity. Also the dependence of Seebeck coefficient and figure of merit on temperature has been investigated in details. A peak appears in the curves of temperature dependence of Seebeck coefficient and figure of merit for various impurity concentrations and scattering potential strengths. Furtheremore we have found electrical conductivity rises with impurity concentration for any temperature and scattering potential strength.

我们在紧束缚模型哈密尔顿的背景下研究了掺杂杂质原子的扶手椅纳米带的热电和输运特性。根据自洽玻恩近似讨论了稀带电杂质的散射效应。格林函数方法已被用来寻找线性响应理论中扶手椅纳米带的态密度、输运和塞贝克系数的行为。我们发现了不同杂质浓度和掺杂剂杂质散射强度值的电导率和热导率的温度依赖性。还详细研究了塞贝克系数和品质因数对温度的依赖性。对于各种杂质浓度和散射势强度，塞贝克系数和品质因数的温度依赖性曲线中出现峰值。此外，我们还发现，对于任何温度和散射势强度，电导率都会随着杂质浓度的增加而增加。