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Device Reliability and Effect of Temperature On Memristors: Nanostructured V2O5
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2024-04-23 , DOI: 10.1109/tdmr.2024.3392634 Sharmila B 1 , Ashutosh Kumar Dikshit 2 , Priyanka Dwivedi 1
中文翻译：
器件可靠性以及温度对忆阻器的影响：纳米结构 V2O5
更新日期：2024-04-23
IEEE Transactions on Device and Materials Reliability ( IF 2 ) Pub Date : 2024-04-23 , DOI: 10.1109/tdmr.2024.3392634 Sharmila B 1 , Ashutosh Kumar Dikshit 2 , Priyanka Dwivedi 1
Affiliation
中文翻译：
器件可靠性以及温度对忆阻器的影响：纳米结构 V2O5
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