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Customizable Organic Charge-Transfer Cocrystals for the Dual-Mode Optoelectronics in the NIR (II) Window
Journal of the American Chemical Society ( IF 15.0 ) Pub Date : 2024-04-22 , DOI: 10.1021/jacs.4c00648
Yue Yu 1 , Xing-Yu Xia 1 , Chao-Fei Xu 1 , Zhao-Ji Lv 1 , Xue-Dong Wang 1 , Liang-Sheng Liao 1, 2
Affiliation  

Organic molecules have been regarded as ideal candidates for near-infrared (NIR) optoelectronic active materials due to their customizability and ease of large-scale production. However, constrained by the intricate molecular design and severe energy gap law, the realization of optoelectronic devices in the second near-infrared (NIR (II)) region with required narrow band gaps presents more challenges. Herein, we have originally proposed a cocrystal strategy that utilizes intermolecular charge–transfer interaction to drive the redshift of absorption and emission spectra of a series BFXTQ (X = 0, 1, 2, 4) cocrystals, resulting in the spectra located at NIR (II) window and reducing the optical bandgap to ∼0.98 eV. Significantly, these BFXTQ-based optoelectronic devices can exhibit dual-mode optoelectronic characteristics. An investigation of a series of BFXTQ-based photodetectors exhibits detectivity (D*) surpassing 1013 Jones at 375 to 1064 nm with a maximum of 1.76 × 1014 Jones at 1064 nm. Moreover, the radiative transition of CT excitons within the cocrystals triggers NIR emission over 1000 nm with a photoluminescence quantum yield (PLQY) of ∼4.6% as well as optical waveguide behavior with a low optical-loss coefficient of 0.0097 dB/μm at 950 nm. These results promote the advancement of an emerging cocrystal approach in micro/nanoscale NIR multifunctional optoelectronics.

中文翻译:

用于近红外 (II) 窗口双模光电器件的可定制有机电荷转移共晶

有机分子由于其可定制性和易于大规模生产而被认为是近红外(NIR)光电活性材料的理想候选者。然而,受复杂的分子设计和严格的能隙定律的限制,在第二近红外(NIR(II))区域实现窄带隙光电器件面临更多挑战。在此,我们最初提出了一种共晶策略,利用分子间电荷转移相互作用来驱动一系列 BF X TQ ( X = 0, 1, 2, 4) 共晶的吸收和发射光谱的红移,导致光谱位于NIR (II) 窗口并将光学带隙减小至 ∼0.98 eV。值得注意的是,这些基于 BF X TQ 的光电器件可以表现出双模光电特性。对一系列基于 BF X TQ 的光电探测器的研究表明,在 375 至 1064 nm 处的探测率 ( D *) 超过 10 13琼斯,在 1064 nm 处的最大值为 1.76 × 10 14琼斯。此外,共晶内 CT 激子的辐射跃迁触发了超过 1000 nm 的近红外发射,光致发光量子产率 (PLQY) 约为 4.6%,并且光波导行为在 950 nm 处具有 0.0097 dB/μm 的低光损耗系数。这些结果促进了微/纳米级近红外多功能光电子学中新兴共晶方法的进步。
更新日期:2024-04-22
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