Physics-based 3D simulations were conducted on a GaN high-electron-mobility transistor (HEMT) and a super-heterojunction field-effect transistor (SHJFET) to investigate the single event effect mechanism under heavy ion irradiation. Most of the single event transient current in HEMT was attributed to the punch-through effect in the bulk caused by the local increase in electrostatic potential. With improved E-field management and a more favorable potential profile to suppress source electron injection, the SHJFET had a 70% lower transient current peak value compared to the HEMT.

中文翻译：

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基于物理的 GaN 高电子迁移率晶体管和超异质结场效应晶体管中单粒子瞬态电流的 3D 模拟

对GaN高电子迁移率晶体管（HEMT）和超异质结场效应晶体管（SHJFET）进行基于物理的3D模拟，以研究重离子辐照下的单粒子效应机制。 HEMT 中的大多数单事件瞬态电流归因于静电势局部增加引起的体中穿通效应。凭借改进的电场管理和更有利的电位分布来抑制源电子注入，SHJFET 的瞬态电流峰值比 HEMT 低 70%。