The study delves into actively controlling Fano resonance within a single-mode microstrip cavity, coupled with a split ring resonator (SRR) incorporating a varactor diode. This resonance arises from the interference between the SRR and a Fabry–Pérot cavity, resulting in a sharply asymmetric transmission spectrum. The varactor diode, situated within the SRR gap, is biased electrically via an external DC voltage source. Through manipulation of this bias voltage, both the transmission frequency and amplitude of the pronounced Fano resonance can be dynamically adjusted. Notably, a significant frequency shift of 345 MHz is achieved, accompanied by a transmission modulation depth of up to 34.2 dB. Moreover, at the Fano peak frequency of 2.65 GHz, the composite SRR-cavity structure exhibits a notable change in group delay, shifting by 21.3 ns with the bias voltage varying from 5 V to 2.6 V. These findings hold promise for the development of electrically controlled functional photonic devices, facilitating their adaptability and versatility in practical applications.

中文翻译：

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侧耦合谐振腔系统中 Fano 谐振的主动控制

该研究深入探讨了在单模微带腔内主动控制 Fano 谐振，并结合采用变容二极管的裂环谐振器 (SRR)。这种共振是由 SRR 和法布里-珀罗腔之间的干扰引起的，导致传输光谱急剧不对称。变容二极管位于 SRR 间隙内，通过外部直流电压源进行电偏置。通过操纵该偏置电压，可以动态调整显着的法诺共振的传输频率和幅度。值得注意的是，实现了 345 MHz 的显着频移，同时传输调制深度高达 34.2 dB。此外，在 Fano 峰值频率为 2.65 GHz 时，复合 SRR 腔结构表现出群延迟的显着变化，随着偏置电压从 5 V 变化到 2.6 V，偏移了 21.3 ns。这些发现为电学的发展带来了希望。受控功能光子器件，促进其在实际应用中的适应性和多功能性。