In this paper, a thermally aware equivalent single conductor is proposed, along with analytical modeling to evaluate the parasitic parameters of multilayer graphene nanoribbon (MLGNR) as interconnect, and its performance is analyzed in terms of delay and power delay product (PDP) for 32$$nm, 22$$nm and 16$$nm technology nodes at variable global interconnect lengths (500–2000$$m). It was examined that with rising temperature, there is a strident decrease in the mean free path (MFP) of GNR interconnect, which further influences its own resistance at global length (2000$$$\mu$m) for all three technology nodes. The simulation tool Simulation Program with Integrated Circuit Emphasis (SPICE) is used to estimate and compare MLGNR performance in terms of signal delay and PDP for three different technology nodes. It is revealed from the outcomes that the propagation delay and PDP increase at long interconnects (500–2000$$$\mu$m) over a temperature range of 200–500$$K for deep submicron technology nodes (16$$nm, 22$$nm and 32$$nm). A similar investigation was performed on the copper interconnect, and it was discovered that the MLGNR performs better in terms of delay and PDP at global levels with a temperature range of 200–500$$K for nano-scaled technology nodes (32$$nm, 22$$nm and 16$$nm).

本文提出了一种热感知等效单导体，并通过分析模型来评估作为互连的多层石墨烯纳米带 (MLGNR) 的寄生参数，并根据延迟和功率延迟积 (PDP) 分析了 32 的性能。$$纳米，22$$纳米和16$$可变全局互连长度的纳米技术节点（500–2000$$米）。研究发现，随着温度的升高，GNR互连的平均自由程（MFP）急剧下降，这进一步影响了其自身在全局长度上的电阻（2000$$$\mu$m) 对于所有三个技术节点。仿真工具Simulation Program with Integrated Circuit Emphasis (SPICE) 用于估计和比较三种不同技术节点的信号延迟和PDP 方面的MLGNR 性能。结果表明，长互连（500-2000）时传播延迟和 PDP 会增加$$$\mu$m) 温度范围为 200–500$$K 代表深亚微米技术节点（16$$纳米，22$$纳米和32$$纳米）。对铜互连进行了类似的研究，发现 MLGNR 在全球范围内的延迟和 PDP 方面表现更好，温度范围为 200-500℃$$K 代表纳米级技术节点（32$$纳米，22$$纳米和16$$纳米）。