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A review of silicon carbide CMOS technology for harsh environments Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-17 Hui Wang, Pengyu Lai, Md Zahidul Islam, Abu Shahir Md Khalid Hasan, Anthony Di Mauro, Nur-E-Afra Anika, Robert Russell, Zhuowen Feng, Kevin Chen, Asif Faruque, Thomas White, Zhong Chen, H. Alan Mantooth
A comprehensive overview of the advancements, challenges, and prospects of silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented. As the demand for high-performance and energy-efficient electronic devices continues to grow, SiC has emerged as a promising material due to its unique properties. The paper aims to provide a thorough understanding of the state-of-the-art
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The correlation of the drain-source capacitance variation and the P-pillar structures in a 4H-SiC quasi super junction MOSFET Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-17 Ruei-Ci Wu, Kung-Yen Lee, Yan-Yu Wen, Pei-Chun Liao
In order to improve the trade-off between the 4H-SiC planar Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) and super junction MOSFET (SJ-MOSFET), particularly on the drain to source capacitance (C) which affects the switching performance, this study investigates the C of the quasi SJ-MOSFETs with various P-pillar widths, depths, and concentrations. The measured results show (1) when the
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Synthesis of ZnO nanorods loaded with SnO2 cubes and the mechanism of improved ethanol sensing performance with DFT calculation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-16 Kai Du, Linqi Zhang, Huijie Shan, Shujie Dong, Xinhe Shen, Gaojie Li
ZnO nanorods are synthesized by a simple calcination method. The SnO/ZnO heterojunctions composed of ZnO nanorods and SnO cubes have been successfully constructed. The obtained samples were characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and X-ray photoelectron spectroscopy (XPS). The sensing performance has been tested in detail, and the results showed
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DFT and TD-DFT study of substituent effects on structure, spectroscopic and photoelectric characteristics of D-A dyes for solar cells Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-16 Jiayu Han, Tao Liu, Jingping Li, Peng Song, Yuanzuo Li
To study the structure, photophysical and photoelectric properties of chlorophyll derivatives, the chlorophyll derivative dyes (CHL-1 and CHL-6) were investigated to exploit their utility in solar cells. The two experimental dye systems were simulated using DFT and TD-DFT, and optimization of the structure, absorption spectroscopy, chemical parameters, electron transfer, and dye regeneration processes
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Strain-tunable elastic, electronic, and thermal transport properties of two-dimensional CaI2 monolayer: A first-principles study Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-15 Jian-Yi Chen, Zhang Tian
Despite the increasing attention on two-dimensional (2D) metal iodides in recent years for their appropriate bandgaps and exceptional optical properties, there is limited understanding of their intriguing thermal transport properties. Here, the strain-tunable mechanic, electronic, and transport properties of the monolayer CaI are calculated in detail by combining first-principles calculations with
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Theoretical and experimental investigation of vibration-assisted scratching silicon Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-15 Weijie Wang, Guanghui Zhao, Yanling Tian, Zhilai Lu, Hui Tang, Fujun Wang, Dawei Zhang
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Diameter enlargement of SiC bulk single crystals based on simulation and experiment Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-15 Yunfeng Chen, Shuichin Liu, Sheanjen Chen, Bingchwen Yang
This study employs the physical vapor transport method for diameter enlargement of silicon carbide single crystal. Numerical simulations were utilized to investigate the impact of different crucible designs on crystal enlargement. The guiding angle and ratio of seed diameter to crucible inner diameter are thoroughly examined in this study. Simulations demonstrated that under appropriate conditions
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A rapid-sintering Cu-Cu joints with ultrahigh shear strength and super reliability for power electronics package Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-15 Dongfang Dai, Jing Qian, Jincheng Li, Yexiong Huang, Zeping Wang, Jiabing Yu, Xiao Wang, Xianping Chen
Sintered Cu interconnection technology for power electronics has been widely investigated owing to its unique low temperature sintering high temperature service characteristics and price superiority. However, the currently research usually requires long sintering time (>30 min) and high pressure (>5 MPa). Here, we synthesized copper formate coated Cu nanoparticles (Cu-FA) by a solvothermal reaction
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Optimization of boron depletion for boron-doped emitter of N-type TOPCon solar cells Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-13 Meilin Peng, Qiqi Wang, Meiling Zhang, Xi Xi, Guilin Liu, Lan Wang, Liping Chen
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Exploring stable half-metallicity and magnetism of Cr-based double half-Heusler alloys and its high magnetoresistance ratio in magnetic tunnel junction Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-13 Yinsheng Zhao, Xiaohua Li, Qian Wu, Yu Feng, Bo Wu
A new series of double half-Heusler (DHH) alloy CrFeCoZ (Z = As, Ge, S, P) are investigated by using the non-equilibrium Green's function in combination with the first-principles calculations. The calculations on magnetism reveal that these Cr-based DHH alloys are ferrimagnets due to the antiparallel magnetic coupling between Cr and Fe (Co). The electronic structure calculations of the Cr-based DHH
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Enhancing charge transfer in 0D/2D cobalt sulfide/boron-doped graphitic carbon nitride heterojunction photocatalyst for degradation of organic pollutants under LED illumination Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-13 Entisar M. Khudhair, Saad H. Ammar, Mohammed S. Mohammed, Zaid H. Jabbar, Sajad Yas Khudhair
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Comprehensive study of structural, elastic, electronic, optical, and thermoelectric properties of Rb2NaTlZ6 (Z = Cl, Br, and I) by DFT Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-13 Syed Hatim Shah, Peng song, Taihong Huang, Shakeel Shakeel, Shamim Khan, Muhammad Waqar Ashraf, G. Murtaza
The investigation focused on examining the structural, optical, elastic, and thermoelectric properties of the developing double perovskites RbNaTlZ (Z = Cl, Br, and I). The cubic phase of the investigated halide double perovskites (HDPs) was confirmed, based on the tolerance factor (τ) metrics of 0.853, 0.845, and 0.835, respectively. The thermodynamic stability of HDPs was evidenced by the negative
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The synergistic effect of POM-π interaction and solid phase amidation on the visible light photocatalytic of g–C3N4–based photocatalyst Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-12 Xiaoyi Huang, Xia Liu
Due to the unique ability of Keggin-type polyoxometalate (POM) to remain stable when accepting electrons to form mixed valence POM, organic-POM hybrid materials can complete multi-electron transfer while maintaining structural stability. The organic-POM hybrids photocatalysts prepared using organic materials and POM as raw materials have been developed to form new energy bands and crystal structures
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The role of spin-orbit coupling on the optical and thermoelectric properties of pristine and defective CsSnCl3 Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-12 David O. Obada, Simeon A. Abolade, Shittu B. Akinpelu, Syam Kumar R, Aniekan M. Ukpong, Akinlolu Akande
This study employed density functional theory calculations to provide predictions regarding the optoelectronic and thermoelectric properties of both pristine and defective CsSnCl in their respective cubic and tetragonal phases. In this study, we provide novel findings about the influence of spin-orbit coupling (SOC) on the optical and thermoelectric characteristics of these systems. When considering
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Template-free synthesis of hierarchical graphitic carbon nitride (H-gC3N4) embedded with NiO for water splitting and CO2 reduction with the role of hole scavenger: A comparative investigation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-11 Beenish Tahir, Muhammad Tahir, Naveen Kumar, Mohammad Siraj, Amanullah Fatehmulla
Hierarchical graphitic carbon nitride (H-gCN) embedded with nickel oxide (NiO) were synthesized using a template-free hydrothermal approach. The performance of NiO/H-gCN composite was investigated for photocatalytic water splitting in a slurry system to produce H. Similarly, photocatalytic CO reduction to generate CO under visible light was conducted in a gas-phase photoreactor system. Optimized 2%
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CeO2/Ni–Al layered double hydroxide composite decorated with Ag nanoparticles as a gas sensor Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-10 Seyed Amirabbas Zakaria, Mohammad Hassan Amini, Seyyed Hamid Ahmadi
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Synergistic bifunctionality of ZnO nanowalls: Antibacterial activity and photocatalysis through integrated in silico and in vitro approaches Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-09 G. Revathi, N. Uma Sangari
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Development of Highly stable ceria slurry in acetic acid-ammonium acetate buffer Media for effective chemical mechanical polishing of silicon dioxide Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-08 Min Liu, Baoguo Zhang, Jihoon Seo, Wenhao Xian, Dexing Cui, Shitong Liu, Yijun Wang, Sihui Qin, Yang Liu
Shallow trench isolation (STI), as a key technology for device isolation, is commonly planarized with ceria slurry in chemical mechanical polishing (CMP). Due to the ceria particles are easily agglomerated, the stability of ceria slurry is still a key issue at present. In order to obtain excellent polishing performance for dielectric, it is necessary to prepare the ceria slurry with stable dispersion
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Interface states modulation in Pt/Graphene/GaN Schottky barrier diodes Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-08 Junxue Ran, Yijian Song, Xiaoli Ji, Renfeng Chen, Jiankun Yang, Junxi Wang, Tongbo Wei
Recently Graphene (Gr) becomes a promising candidate for the integration of devices as a Schottky contact. In this study, Pt/Gr/GaN and Pt/GaN SBDs were fabricated to determine the Gr interlayer effect on the electrical characteristics of the devices. The temperature and frequency dependent capacitance-voltage (), conductance-voltage (), and current-voltage () are measured, from which the Schottky
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Theoretical investigations of double perovskite Rb2AgBiX6 (X = Cl, Br, I) for solar cell and photocatalysis applications Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-08 Shuangna Guo, Changcheng Chen, Ziyi Zhang, Yan Cai, Songya Wang, Shuli Gao, Wen Chen, Elyas Abduryim, Chao Dong, Xiaoning Guan, Ying Liu, Pengfei Lu
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Comparative study of electronic band gap tuning in 1L-MoSe2 and 1L-WSe2 by heterostructuring (MoSe2/WSe2), alloying (MoxW(1−x)Se2) and biaxial straining Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-08 Mayur Khan, Madhvendra Nath Tripathi, Ambuj Tripathi
Using density functional theory, the electronic band structure characteristics of 1L-MoSe, 1L-WSe, heterostructure of MoSe/WSe, the effect of transition metal alloying and biaxial straining are investigated. The direct nature of the band gaps of 1L-MoSe, 1L-WSe, and the MoSe/WSe heterostructure are 1.49 eV, 1.66 eV, and 1.42 eV, respectively. The different compositions of the transition metal alloy
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Stabilizing the S-scheme ZnO/ZnCr2O4/Bi6Cr2O15 heterojunction through the application of carbon xerogel as both a solid-state mediator and reducing agent Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-07 Nicolas Perciani de Moraes, Matheus Fernandes de Oliveira, Rebeca Bacani, Robson da Silva Rocha, Marcos Roberto de Vasconcelos Lanza, Liana Alvares Rodrigues
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Dislocation slip mechanism and prediction method during the ultra-precision grinding process of monocrystalline silicon Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-06 Ming Li, Xiaoguang Guo, Ning Huang, Yanyu Yang, Renke Kang, Dongming Guo, Ping Zhou
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Unveiling the cobalt vanadate supported hexagonal boron nitride nanocomposite for photocatalytic wastewater treatment: Enhanced degradation of dyes, antibiotics, and real industrial wastewater Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-05 Sankeetha Sasikumar, Arulmozhi Rajaram
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Preparation and characterization of the highly efficient tetraphenylimidazole substituted Phthalocyanine/ZnO composite and investigation of its effect on the photocatalytic degradation of Rhodamine B and 2,4,6-trichlorophenol Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-05 Kaan Karaoğlu, Gizem Durak Yüzüak, Ercüment Yüzüak, Hanife Turan, Hakkı Türker Akçay
Growing concerns about industrial waste-induced environmental degradation have driven research towards sustainable solutions. Photocatalytic degradation, fueled by light and avoiding harmful chemicals, offers a promising avenue due to its minimal environmental impact. ZnO, TiO₂, and their derivatives are particularly effective and widely studied photocatalysts. This study aims to prepare new composite
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Synthesis, characterization, and photo-Fenton activity of Bi[Fe(CN)6]·4H2O Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-05 Pimpaporn Sriprang, Sumetha Suwanboon, Pongsaton Amornpitoksuk
The Fenton reaction has been widely used in wastewater treatment processes, and the reaction rate is improved by irradiation with light. In this work, Bi[Fe(CN)]·4HO was synthesized as a photo-Fenton catalyst by precipitation at room temperature without any stabilizer or capping agent. Two synthesis routes were used and compared; one using K[Fe(CN)] solution and the other using K[Fe(CN)]. When Bi(NO)
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Computational study of lead-free (CH3NH3)2AuIAuIIIX6 (X = Cl, Br, I) for solar cell applications Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-04 Diwen Liu, Wenqing Yang, Rongjian Sa
Herein, lead-free MAAuAuX (MA = CHNH, X = Cl, Br, I) is recommended as a potential candidate for perovskite solar cells via the first-principles calculations. Structural analysis shows that lattice contraction and octahedral distortion occur simultaneously since the cesium cations at the A-site are substituted by larger organic methylammonium cations. The good thermodynamic and thermal stability is
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S-Schematic CuWO4/ZnO nanocomposite boosted photocatalytic degradation of organic dye pollutants Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-04 Yupawan Koedsiri, Pongsaton Amornpitoksuk, Chamnan Randorn, Tanattha Rattana, Sujitra Tandorn, Sumetha Suwanboon
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Morphology and luminescent properties of gold catalysed CdS 1D structures: The influence of temperature and atmosphere Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-04 P. G. Zayas-Bazán, O. de Melo, K. Gutierrez Z-B, G. Santana, J. Santoyo-Salazar, J. Esaú Romero-Ibarra, J.C. González, F.M. Matinaga, G. Contreras-Puente
In this work, CdS nanowires (NWs) were prepared by the catalytic method using Au nanoparticles onto GaAs and CdS substrates. Scanning and transmission electron microscopy techniques (SEM, TEM) allowed observing different morphologies in the obtained products: variable diameter, pointed and ultra-long several microns length NWs. Also, a nanotube like hollow structure was identified when CdS/ITO/glass
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Stacking faults in 4H–SiC epilayers and IGBTs Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-04 Pin Wang, Weiwei Cheng, Yifei Li, Lei Xu, Pengxiang Hou, Le Yu, Yun Li, Zheyang Li, Rui Jin
Silicon carbide (SiC) power devices are heading towards high power and high voltage, where 4H–SiC bipolar devices play a key role due to low on-resistance and ultra-high blocking voltage. However, stacking faults (SFs) can result in forward voltage drifts and increased reverse leakage currents in bipolar devices. Moreover, SFs expand easily from basal plane dislocation (BPD) under current stress, severely
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Enhancing supercapacitance and energy density with phase tuning agent: Bi25FeO40 microcubes perspective Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-03 A. Muthu Kumar, V. Ragavendran, J. Mayandi, K. Ramachandran, K. Jayakumar
The quest for efficient supercapacitors exhibiting excellent energy and power densities for portable devices and electric vehicles necessitates the discovery of advanced electrode materials. In this study, we utilize sodium dodecyl sulfate (SDS) as a phase and shape-directing surfactant at various concentrations (X wt% = 1, 3, 7, and 10) to synthesize bismuth iron oxide cubes (BiFeO) via hydrothermal
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Mechanochemical synthesis of novel Z-scheme ZnIn2S4/Zn–Al layered double hydroxides heterojunction with performed photodegradation of SIPX xanthate from aqueous solution Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-03 Mingfei Sun, Yongwei Mao, Yu Na, Yumo Liu, Zhao Li, Min Chen, Pengcheng Li, Shujuan Dai, Tonglin Zhao
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Organic pollutants photodegradation increment with use of TiO2 nanotubes decorated with transition metals after pulsed laser treatment Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-03 Zuzanna Bielan, Adam Kubiak, Jakub Karczewski, Jacek Ryl, Karol Załęski, Emerson Coy, Piotr Krawczyk, Katarzyna Siuzdak
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Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-02 A. Marcuzzi, M. Avramenko, C. De Santi, F. Geenen, P. Moens, G. Meneghesso, E. Zanoni, M. Meneghini
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Active element Ti improves the Sn-based alloy filler/graphite soldering interface: A combined first-principles and experimental study Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-01 Zhencheng Yang, Lanxian Cheng, Shizhang Chen, Yi Zhang
Active element Ti plays a crucial role in the graphite soldering process. However, the atomic interaction mechanism between the active element Ti and graphite remains unclear. In this study, the enhancement effect of the active element Ti on the Sn-based alloy filler/graphite soldering interface was investigated by employing first-principles calculations combined with experimental methods. Based on
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Multi-Gaussian distribution of barrier height in diamond-like carbon interfacial-layered Schottky devices Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-01 Ahmet Kaymaz
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BiOBr-rice husk carbon composite for antibiotic degradation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-01 Bosely Anne Bose, Ange Nzihou, Daniel Thangadurai, Abhijit Saha, Nandakumar Kalarikkal
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Dual configuration of shallow acceptor levels in 4H-SiC Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-04-01 Marianne Etzelmüller Bathen, Piyush Kumar, Misagh Ghezellou, Manuel Belanche, Lasse Vines, Jawad Ul-Hassan, Ulrike Grossner
Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT. Therefore, a comprehensive understanding of the defect energetics and how the impurities are introduced into the material is imperative. Herein, we study impurity related defect levels in 4H-SiC epitaxial layers (epi-layers)
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Rational construction and significantly improved sonophotocatalytic performance of ZnIn2S4/Bi25FeO40 composites for the removal of organic pollutant Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-31 Tiekun Jia, Chenxi Sun, Shuyi Mo, Fei Long, Weimin Wang, Jilin Wang, Dongsheng Yu, Qian Zhang, Yinao Wang, Joong Hee Lee
In this work, ZnInS/BiFeO (ZIS/BFO) composites were prepared via a hydrothermal synthesis followed by ultrasound sonication method. Owing to the introduction of BFO, the obtained ZIS/BFO composites exhibited a higher visible-light absorption capacity than ZIS, which was revealed by the results of the diffusion reflectance spectra (DRS). Taking tetracycline hydrochloride (TCH) as the target pollutant
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A novel extended gate ISFET design for biosensing application compatible with standard CMOS Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-30 Oksana Gubanova, Andrey Poletaev, Natalia Komarova, Vitaliy Grudtsov, Dmitriy Ryazantsev, Mark Shustinskiy, Maxim Shibalov, Alexander Kuznetsov
This paper describes a novel design of ISFET, which uses a hafnium oxide-coated aluminum pad surface as a floating/extended gate. The design was realized using standard CMOS technology followed by BEOL post treatment. The ISFET was designed to operate in subthreshold mode and has subthreshold slope of 108 mV/dec, pH sensitivity of 55 mV/pH and temporal stability 0.008 mV/min. Based on the ISFET, an
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Effects of neutron irradiation on failure behavior analysis of high-density bumps under thermo-coupling conditions Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-30 Xinyi Jing, Keyu Luo, Liqiang Cao, Kyung-Wook Paik, Peng He, Shuye Zhang
As the space environment has conditions such as high vacuum, strong irradiation, and large temperature difference, spacecraft will face a series of challenges such as high-energy particles and extreme temperatures during on-orbit operation, especially neutron irradiation, which has a larger mean free range and a deeper depth of penetration, and which will cause serious damage to the electronic devices
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CdS@CuInS2 nanocomposites for enhanced photocatalytic activity under visible light irradiation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-30 Ashmalina Rahman, Fazlurrahman Khan, James Robert Jennings, Young-Mog Kim, Mohammad Mansoob Khan
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Material removal characteristic of single abrasive scratching 4H–SiC crystal with different crystal surface Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-29 Jun Li, Hongyan Zhao, Xiujuan Gao, Lei He, Daqing Zhou
Silicon carbide (SiC) crystal is a third-generation semiconductor material, which is widely used in the fields of radio frequency components, aerospace, new energy vehicles, etc. The anisotropy of 4H–SiC leads to differences in material removal characteristics of different crystal surfaces, which influences the design of process parameters for SiC crystal polishing. A model of single abrasive scratching
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Ab initio investigation of mechanical, electronic and optical properties in the orthorhombic [formula omitted] inorganic perovskite Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-29 Ahmad Alsaad, Ahmad Telfah, Hakim Baaziz, T. Ghellab, Z. Charifi, Sahar Abdalla, Wai-Ning Mei, Renat Sabirianov
This study employs a first-principles approach to comprehensively investigate the structural, electronic, elastic, and optical properties of two distinct inorganic perovskite phases of CsPbI, identified as C–CsPbI and O–CsPbI. Utilizing the Wien2K code, simulations are conducted employing various density functional theory (DFT) approximations, including local density approximation (LDA), generalized
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Green emissive Tb(III) complexes based on photosensitizing antenna: Synthesis and optoelectronic analysis Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-29 Swati Dalal, Devender Singh, Anuj Dalal, Anjli Hooda, Sumit Kumar, Rajender Singh Malik, Parvin Kumar, Jayant Sindhu
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Combination of multiple routes to enhance DSSC performance: Flower-like structure of SnO2 as photoanode and modification with Ag nanoparticle Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-29 Haihong Niu, Xiaooyu Yao, Suikang Luo, Yuxin Xie, Tianwen Li, Wenlong Chen, Lei Wan, Huan Wang, Ru Zhou, Yaoning Du, Liangliang Hu, Jinzhang Xu
SnO is an attractive photoanode material for dye-sensitized solar cells (DSSCs), but it has many drawbacks and needs to be modified. In this study, flower-like SnO particles are firstly prepared by a simple one-step hydrothermal synthesis method respectively, and the effect of hydrothermal reaction time on the growth of the particles is explored. The morphological and structural characterisation reveals
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One-pot synthesis of g-C3N4/diatomite composite with nitrogen vacancies for enhanced photocatalytic activity Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-29 Liyan Wang, Jingyu Liu, Zhe Liu, Li Zhao, Shanshan Xiao, Fei Bi, Huan Wang, Yingqi Li
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Synthesis of 3D rice-like BiOCl battery-type electrode material and evaluation of their electrochemical performance in a symmetrical supercapacitor device configuration Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-28 Yugesh Singh Thakur, Aman Deep Acharya, Sakshi Sharma, Amisha, Sagar Bisoyi, Bhawna, Sandeep Singh Manhas
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One-dimensional biomass-based carbon nanotubes loaded with MoS2 as catalysts for the electrocatalytic nitrogen reduction reaction Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-28 Shengyan Wang, Jiansheng Tian, Abulikemu Abulizi, Kenji Okitsu
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Metal ions and organic molecule co-intercalated vanadium oxide cathode for high-performance zinc-ion batteries Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-28 Liang Hu, Qinghe Sun, Hongkun Cai, Jian Ni, Jianjun Zhang
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First-principles study on the electronic and optical properties of pn-type SnO/MoS[formula omitted] heterojunction tuned by various intrinsic vacancy defects and layer thicknesses Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-26 Di Fan, Jia-chen Wang, Feng-ning Xue, Ting Liu, Yong Lu, Ji-cai Zhang
The impact of various intrinsic point defects and layer thicknesses on the electronic structure and optical properties of pn-type SnO/MoS heterojunctions has been investigated using first-principles calculations in this study. SnO/MoS heterojunctions are indirect bandgap semiconductors, with a narrower bandgap compared to monolayer SnO and MoS, which decreases with increasing thickness of SnO or MoS
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Reduction of oxygen vacancies in Mg–N codoped Ga2O3 films for improving solar-blind UV photodetectors performance Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-26 Shuoqi Jin, Shuyi Sun, Zihui Liu, Xinhua Pan, Zhizhen Ye, Bin Lu
Solar-blind photodetectors based on gallium oxide (GaO) have shown possibilities in optical imaging, spatial communication, and other fields. The high oxygen vacancy (V) content inherent in GaO film would inevitably result in poor photoelectric detection capability. This work suggests using a codoping for reducing V concentrations in GaO films. In a NO atmosphere, magnesium and nitrogen codoped gallium
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External electric field assisted energy band gap modulation and optical properties of SiGe/AsSb heterobilayers Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 Touhid Ahmed, Samia Subrina
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Bi4O7 modified AgBiO3 to construct Z-scheme heterojunction for photocatalytic removing phenol Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 Zejin Jia, Jianxin Liu, Rui Li, Caimei Fan, Yawen Wang
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Investigation of lead-free direct bandgap Ca[formula omitted]MAsO[formula omitted] (M=Ga, In) double perovskites for optoelectronic and thermoelectric applications: A first principles study Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 Abu Raihan, Mohammad Abdur Rashid, Mashnon Hasan Fahim, Arif Hossain, Muhammad Ruhul Amin
In this study, an extensive investigation into the multiple characteristics of CaMAsO (M=Ga, In), double perovskite materials, focusing on their structural, mechanical, electronic, optical, and thermoelectric properties utilizing the density functional theory is explored. The structural and mechanical stability of these materials with a cubic structure is confirmed by the tolerance factors, octahedral
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Unveiling the physical properties of RbCu3MSe4 (M = Si, Ge) direct band gap semiconductors: A systematic first-principles study Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 Muhammad Salman Khan, Banat Gul, Bashir Ahmad, Gulzar Khan, Munirah D. Albaqami, Saikh Mohammad Wabaidur, Guenez Wafa, Hijaz Ahmad
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Antimony-doped cerium ferrite: a robust photocatalyst for the mitigation of diclofenac potassium, an emerging contaminant Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 Ayesha Javaid, Muhammad Imran, Farah Kanwal, Shoomaila Latif
The present work reports an improvement in the photocatalytic performance of cerium ferrite (CeFeO) via doping of antimony (Sb) towards the photodegradation of toxic pharmaceutical pollutant i.e. diclofenac potassium. The variable concentrations of CeSbFeO (x = 0.00, 0.01, 0.03, 0.05, 0.06, 0.07, 0.09) were prepared using facile co-precipitation route and subsequently characterized for their optical
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Enhanced solar light-induced performance of a step-scheme heterojunction nanostructure (C3N4/ZrO2) for mixed dye degradation and methanol oxidation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-25 S.V. Prabhakar Vattikuti, P. Reddy Prasad, Ahmed M. Aljuwayid, P. Rosaiah, Hemanth P.K. Sudhani, Jaesool Shim
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Promoted photocatalytic performances over Ti3+-B co-doped TiO2/BN with high carrier transfer and absorption capabilities driven by SWCNT addition Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-24 Lihui Xiao, Shijie Zhang, Huizhen Cui, Jingcai Chang, Yibing Feng, Shuguang Wang, Zuoli He
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Structure and RF performance evolution of polycrystalline silicon charge capture layer for advanced RF-SOI in in-situ annealing process Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-23 Rongwang Dai, Yun Liu, Jingjun Ding, Chenyu Shi, Ziwen Wang, Zhongying Xue, Xing Wei
In this paper, the structures and radio-frequency (RF) properties of high resistivity silicon (HR-Si) wafers with a polycrystalline silicon (Poly-Si) charge capture layer after in-situ annealing were investigated. The thermal treatment significantly improves the wafer warpage and optimize the resistivity of Poly-Si/HR-Si interfaces. By using spreading resistance profiling (SRP), energy dispersive spectrometer