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Effect of Different Concentrations of Co Doping on the Properties of η′-Cu6Sn5 and Ni3Sn4: First-Principles Study Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-16 Li Wang, Yaoxuan Huang, Shihao Guo, Jinye Yao, Jing Xing, Haitao Ma, Yunpeng Wang, Jun Chen
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Electrochemical Etching of Nitrogen Ion-Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-16 Matthias Hoormann, Frederik Lüßmann, Christoph Margenfeld, Carsten Ronning, Florian Meierhofer, Andreas Waag
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The Effect of AlN Epilayer Growth Rate on the Growth of Semipolar (11–22) InGaN/GaN Light Emitting Diode Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-15 Gary Tan, Ahmad Shuhaimi Abu Bakar, Hann Sen Low, Chong Seng Ooi, Omar Al‐Zuhairi, Yew Hoong Wong, Rizuan Norhaniza, Shamsul Amir Abdul Rais, Wan Haliza Abd Majid
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A Density Functional Theory Exploration of Cs2B′B″I6 (B′B″: BeCa, BeSr, GeCd, GeBe, GeMg) Halide Double Perovskites for Optimal Solar Cell and Renewable Energy Applications Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-15 Messaoud Caid, Djamel Rached, Habib Rached, Youcef Rached
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Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-15 Dhanu Chettri, Ganesh Mainali, Na Xiao, Xiao Tang, Xiaohang Li
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Bandgap Energy of Ion‐Doped LaMnO3 Nanoparticles Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-13 Angel T. Apostolov, Iliana N. Apostolova, Julia M. Wesselinowa
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Neutron Reflectivity for Testing Graphene Oxide Films Sorption of EuCl3 in Ethanol Solution Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-10 Andreas Nordenström, Nicolas Boulanger, Alexey Vorobiev, Lucia Amidani, Stephen Bauters, Jurij Galanzew, Kristina Kvashnina, Alexandr Talyzin
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Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-10 Hayato Watanabe, Dingding Wang, Takashi Fujii, Toshiyuki Iwamoto, Tsuguo Fukuda, Momoko Deura, Tsutomu Araki
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Hybrid Approach for Modeling Memristive Elements Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-10 Karine Karlenovna Abgaryan, Alexander Yurievich Morozov, Dmitry Leonidovich Reviznikov
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Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-07 Hideaki Murotani, Kunio Himeno, Hayate Ohkawara, Kaichi Tani, Satoshi Kurai, Narihito Okada, Noritoshi Maeda, Muhammad Ajmal Khan, Hideki Hirayama, Yoichi Yamada
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An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-07 Toru Akiyama, Takahiro Kawamura
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Effect of Pre‐annealing Treatment on Growth and Properties of (Cu0.5Ag0.5)2ZnSnSe4 Thin Films Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-07 Rhishikesh Mahadev Patil, Rohit Mondal, Shaik Babujani, Gali Hema Chandra, Yerva Pedda Venkata Subbaiah, Mukul Gupta, Rayavarapu Prasada Rao
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Characterization of GaN‐Based Nanopillar Light‐Emitting Diodes on Multicrystalline Si Substrates: Insights into Emitting‐Color Distribution Characteristics Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-05 Houyao Xue, Shingo Taniguchi, Tsubasa Saito, Yuichi Sato
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Density Functional Theory‐Based Adsorption Studies of ClO2 and Its Decomposition Products on Defective and Metal‐Doped Graphene Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-03 Pengcheng Zhu, Weiyao Yu, Jiaming Zhao, Yongliang Zhu
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Direct Growth of Nearly Lattice‐Matched InGaN on ScAlMgO4 Substrates Using Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-03 Yuta Kubo, Momoko Deura, Yasuhiro Yamada, Takashi Fujii, Tsutomu Araki
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First‐Principles Study of Lattice Thermal Conductivity in SnSe Bilayer and Trilayer Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-01 Wentao Li, Chenxiu Yang
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Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-01 Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada
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Adiabatic Potential for Conformational Change of VGa–VN Complex Defects in GaN Phys. Status Solidi B (IF 1.6) Pub Date : 2024-04-01 Jota Nakamura, Masato Oda, Yoshihiro Kangawa
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Low‐Pressure Chemical Vapor Deposition of Hexagonal Boron Nitride on a‐Plane Sapphire Using BCl3 as a Boron Source Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-28 Kazuhiko Hara, Taiki Oishi, Soma Ota, Ruki Aoike, Yuma Takahashi, Akira Takemura, Hiroko Kominami
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A First‐Principles Investigation of Monolayer MoS2 Doped with Mn and V as an Excellent NO2 Sensor with High Selectivity Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-25 Lei Tian, Jiahuan Hu, Chengyu He, Fei Ling
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In Situ Center Wavelength Control of AlInN/GaN Distributed Bragg Reflectors with In Situ Reflectivity Spectra Measurements Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-25 Kenta Kobayashi, Taichi Nishikawa, Ruka Watanabe, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Toshihiro Kamei
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The Pressure‐Induced Structural Stability, Mechanical, and Optoelectronic Properties of Pb2ScTaO6 Perovskite: a Density Functional Theory Study Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-23 Mouad Ben‐nana, Mohamed Agouri, Abderrahman Abbassi, Felicia Iacomi, Elhadadi Benachir
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Structural and Photoluminescence Characteristics of a Novel Single‐Phase White‐Emitting Phosphor SrBi2Nb2O9:Dy3+ Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-22 Xiao Yang, Ruirui Cui, Jun Zhang, Chaoyong Deng
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Suppression of Mixing of Metastable Zincblende Phase in GaN Crystal Grown on ScAlMgO4 Substrates by Radio‐Frequency Plasma‐Assisted Molecular Beam Epitaxy Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-22 Momoko Deura, Yuichi Wada, Takashi Fujii, Tsutomu Araki
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Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-22 Ryota Ishii, Shiki Tanaka, Norman Susilo, Tim Wernicke, Michael Kneissl, Mitsuru Funato, Yoichi Kawakami
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The Effect of Oxidation of Vicinal Au Surface on the Magnetic Properties of Surface‐Supported Mn Nanowires Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-21 Ekaterina M. Smelova, Kseniya M. Tsysar, Radel R. Gimaev, Vladimir I. Zverev
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Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐Doped p‐/n‐GaN Structure under Applied Voltage by Scanning Internal Photoemission Microscopy Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-19 Hiroki Imabayashi, Haruto Yoshimura, Fumimasa Horikiri, Yoshinobu Narita, Hajime Fujikura, Hiroshi Ohta, Tomoyoshi Mishima, Kenji Shiojima
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Interacting Electrons in a Flat‐Band System within the Generalized Kadanoff–Baym Ansatz Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-19 Francesco Cosco, Riku Tuovinen, Nicolino Lo Gullo
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Energization‐Time Dependence of Electrical Properties of Anodized n‐GaN Grown on Si Substrates Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-19 Gaku Kamio, Hiroshi Fujioka, Narihiko Maeda
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Effect of Alloying Elements on the Microstructure and Magnetic Properties of Mechanically Alloyed AlNiCo‐Based High‐Entropy Alloys Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-19 Raghavendra Kulkarni, Garikapati Nischay Kaushik, Budaraju Srinivasa Murty, Veeturi Srinivas
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Low‐Power Crystallization Process in In3SbTe2 Phase Change Memory Devices with Thin Oxide Layer Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-18 Anushmita Pathak, Shivendra Kumar Pandey
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Characterization of ZnO Crystals of Various Geometries Grown by Mist Chemical Vapor Deposition on a c‐Plane Sapphire Substrate Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-17 Kodai Kato, Junichi Iwata, Masaru Sakai, Kazuhiko Hara, Tetsuya Kouno
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High‐Pressure‐Induced Lattice and Electronic Structural Transformations in Multilayer ZrS2 Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-17 Jian Zhu, Dengman Feng, Liang Li, Qiang Zhou, Yalan Yan
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Origin of Black Color in Heavily Doped n‐Type GaN Crystal Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-16 Tomoaki Sumi, Junichi Takino, Yoshio Okayama, Shigeyoshi Usami, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori
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Utilizing Island Growth in Superlattice Buffers for the Realization of Thick GaN‐on‐Si(111) PIN‐Structures for Power Electronics Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-16 Sondre Michler, Sarad Thapa, Sven Besendörfer, Martin Albrecht, Roland Weingärtner, Elke Meissner
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Realization of High‐Resistive Ni‐Doped GaN Crystal by Hydride Vapor‐Phase Epitaxy Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-12 Takafumi Odani, Kenji Iso, Yuichi Oshima, Hirotaka Ikeda, Tae Mochizuki, Satoru Izumisawa
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High‐Quality Nonpolar a‐Plane AlGaN Film Grown on Si‐Doped AlN Template by Metal Organic Chemical Vapor Deposition Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-11 Tingsong Cai, Yanan Guo, Zhibin Liu, Ruijie Zhang, Dadi Wang, Jinmin Li, Junxi Wang, Jianchang Yan
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Rapid State Transfer via All‐Microwave Scheme in Transmon Qutrit Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-08 Jiasong Chen, Zhuang Ma, Jianwen Xu, YuNan Li, Tao Zhang, Dong Lan, Xinsheng Tan, Yang Yu
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Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-07 Joerg Malindretos, Hendrik Jaeckel, Constantin Hilbrunner, Angela Rizzi
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Electronic, Elastic, Piezoelectric, and Infrared Properties of 2D Phosphorus Oxynitride by First Principles Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-07 Zhen‐Long Lv, Shi‐Jie Lv, Kai‐Tong Wang, Hong‐Ling Cui
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Influence of Carbon Doping on Stability of Intrinsic Defects in Y3Al5O12 and Lu3Al5O12 Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-06 Lingchun Jia, Mu Gu, Jiajie Zhu, Borys Grynyov, Oleg Sidletskiy
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Low‐Pressure, Modified Halide Vapor‐Phase Epitaxy for Chemically Pure GaN Epilayers Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-05 Jacob H. Leach, Kevin Udwary, Gregg Dodson, Tinh B. Tran, Heather A. Splawn
The halide vapor‐phase epitaxy (HVPE) technique has been extensively used for the production of freestanding GaN crystals for GaN wafer manufacturing, but has had renewed interest in recent years as a technique for producing high‐quality GaN epilayers at high growth rates and without the issues of carbon incorporation which complicate the growth of GaN using metal–organic vapor phase epitaxy. Herein
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Acoustic Shock‐Wave‐Induced Crystallographically Order–Disorder Switchable Phase Transition of Ammonium Sulfate Crystal: X‐Ray Diffraction and Raman Spectroscopic Approach Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-04 Sivakumar Aswathappa, Eniya Palaniyasan, Sahaya Jude Dhas Sathiyadhas, Lidong Dai, Raju Suresh Kumar, Abdulrahman I. Almansour, Kalyana Sundar Jeyaperumal, Martin Britto Dhas Sathiyadhas Amalapushpam
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Effect of Strain on Electron Transport and Quantum Lifetimes in InxGa1−xAs/In0.52Al0.48As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-04 Ram Chandra Swain, Ajit Kumar Sahu, Madhusudan Mishra, Trinath Sahu, Narayan Sahoo
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Surface Oxidation of GaN(0001) Simulated by Charge‐Transfer‐Type Molecular Dynamics Phys. Status Solidi B (IF 1.6) Pub Date : 2024-03-01 Yuki Ohuchi, Hidenori Saeki, Hiroki Sakakima, Satoshi Izumi
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Analysis of Altered Layers Formed during Substrate Exfoliation of AlGaN Crystals Grown on Periodic AlN Nanopillars Using the Heated‐Pressurized Water Method Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-29 Eri Matsubara, Ryoya Yamada, Ryosuke Kondo, Toma Nishibayashi, Yoshinori Imoto, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Takahiro Maruyama, Hideto Miyake, Shintaro Kobayashi, Taiji Yamamoto, Motoaki Iwaya
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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-29 Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski
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Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga2O3 Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-27 David Nicol, Stephen Reynolds, Kristopher Barr, Joseph W. Roberts, John J. Jarman, Paul R. Chalker, Fabien C.‐P. Massabuau
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A Density Functional Theory Study of Gas Adsorption (NO, NO2) on Metal Oxides (CuO, Ag2O) Modified Ti3C2O2 Monolayer Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-27 JiaHui Su, Xin Liu, Hanmei Zhang, Bing Zhao, Yue Feng, Chao Wang, Tao Shen
The adsorption properties of five gases on metal oxides (CuO, Ag2O) modified Ti3C2O2 are studied by the first‐principles density functional theory. The gas sensitivity of nitric oxide, ammonia, nitrogen dioxide, methane, and formaldehyde on metal oxides (CuO, Ag2O) modified Ti3C2O2 is systematically discussed on the aspects of adsorption energy, the density of state, electronic localization function
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Pseudo Temperature Independent Paramagnetism in Co2Si5N8 Nitridosilicate Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-21 Cordula Braun, Liuda Mereacre, Tobias Stürzer, Björn Schwarz
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An Examination of the Vibrational, Mechanical, Thermoelectric Features and Stability of Novel Half‐Heusler XVIn (X = Pd, Pt) by Density Functional Theory Computation Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-20 Haris Arquam, Anshuman Srivastava, Kunjee Lal Meena, Suman Chowdhury, Ramesh Sharma, Tahani I. Al‐Muhimeed, Ghazanfar Nazir, Vipul Srivastava
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First‐Principles Study of Schottky Barrier Heights on Metal/4H‐SiC Polar Interfaces Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-20 Wen Ji, Xi Tang, Ruyue Cao, Ming Jiang, Yuzheng Guo, Shuxing Zhou, Cungang Hu, Zhaofu Zhang
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Two‐Time Quantum Fluctuations Approach and Its Relation to the Bethe–Salpeter Equation Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-19 Erik Schroedter, Michael Bonitz
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Optimization of Perovskite/Colloidal Quantum Dot Monolithic Tandem Solar Cell to Enhance Device Performance via Solar Cell Capacitance Simulator 1D Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-19 Reeta Singh, Manju Rani
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Insight into the Grain Refining Mechanism of Al–Ti–C and the Interfacial Properties between the Inoculants and Aluminum Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-18 Dahong Zhao, Cheng Xie, Zhengbing Xiao, Shita Huang
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Nonequilibrium Dynamics of the Hubbard Dimer Phys. Status Solidi B (IF 1.6) Pub Date : 2024-02-14 Yaroslav Pavlyukh