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Co-Optimization of a-InGaZnO Framework for Enhancing Thin Film Transistors Stability and Electrical Properties IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-15 Yongle Song, Chunlan Wang, Yuchao Jiao, Xiaohong Liu, Nan Duan, Zihan Qin, Jingli Wang
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Study of a Dual-Sheet Beam Electron Optic System IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-15 Guoxiang Shu, Shaochen Ma, Jiacai Liao, Xinlun Xie, Huaxing Pan, Siyuan Liu, Mingze Li, Jiawei Tang, Wenlong He
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High-Speed and Low-Power Ferroelectric HfO$_{\text{2}}$/ZrO$_{\text{2}}$ Superlattice FinFET Memory Device Using AlON Interfacial Layer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-15 Chen-You Wei, Ming-Yueh Huang, Siao-Cheng Yan, Yung-Chun Wu
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Enhancing the Performance of Light-Emitting Electrochemical Cells by Incorporating Quantum Dots IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-15 Tuo Wu, Qunying Zeng, Yangbin Zhu, Haomin Chen, Guogang Shan, Tailiang Guo, Hailong Hu, Fushan Li
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Understanding HZO Thickness Scaling in Si FeFETs: Low Operating Voltage, Fast Wake-Up, and Suppressed Charge Trapping IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-12 Zuocheng Cai, Kasidit Toprasertpong, Zhenhong Liu, Mitsuru Takenaka, Shinichi Takagi
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Drain Current Model for Antiambipolar Organic TFTs at Different Temperatures IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-11 Hongyu He, Xinnan Lin, Shengdong Zhang
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Implementing Remote Doping and Suppressed Scattering in MoS$_{\text{2}}$ Field-Effect Transistor Using CMOS-Compatible Process IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Weiming Ma, Tianjiao Zhang, Jiayang Hu, Yu Kang, Hanxi Li, Jiachao Zhou, Qian He, Hailiang Wang, Yang Xu, Yuda Zhao, Bin Yu
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Wide Temperature Range Modeling of Implanted Resistors Based on 4H-SiC CMOS Process IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Wenhao Yang, Yuyin Sun, Mengnan Qi, Zhenyu Tang, Shasha Mao, Lei Yuan, Lejia Sun, Yimeng Zhang, Yuming Zhang
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Multichannel Two-Dimensional MoS2 Nanosheet MOSFET for Future Technology Node IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Akhilesh Rawat, Brajesh Rawat
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Over dV/dt Robustness of Switching Behavior of SiC MOSFET and a Novel Main Junction Region Design IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Botao Sun, Guangyin Lei, Jon Zhang
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Design and High-Frequency Characterization of a Wafer-Scale Vertical Bridge Structure Nanoscale Vacuum Electronic Device IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Ruihan Huang, Feiliang Chen, Junxiang Yang, Haiquan Zhao, Yazhou Wei, Xiangdong Wang, Hao Jiang, Fan Yang, Yang Liu, Mo Li, Jian Zhang
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Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Zihe Zhu, Wenliang Wang, Peixin Liu, Chao Wang, Jianyu Lan, Lei Lei, Lijie Sun, Xing Hu, Tingjun Lin, Pingan Liu, Guoqiang Li
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Characterization and Modeling of Silicon-on-Insulator Lateral Bipolar Junction Transistors at Liquid Helium Temperature IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Yuanke Zhang, Yuefeng Chen, Yifang Zhang, Liling Qiu, Jun Xu, Chao Luo, Guoping Guo
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Highly Scaled BEOL-Compatible Thin Film Transistors With Ultrathin Atomic Layer Deposited Indium–Tin–Zinc–Oxide Channel IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Yan-Kui Liang, Jun-Yang Zheng, Yu-Lon Lin, Yu-Cheng Lu, Dong-Ru Hsieh, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Kasidit Toprasertpong, Shinichi Takagi, Chun-Hsiung Lin
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Static Negative Susceptibility in Ferromagnetic Material Induced by Domain Wall: Possibility to Achieve Gigantic Diamagnetism IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Nilesh Pandey, Yogesh Singh Chauhan
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High-Density Embedded 3-D Stackable Via RRAM in 16-nm FinFET CMOS Logic Process IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Yao-Hung Huang, Yu-Cheng Hsieh, Yu-Cheng Lin, Yue-Der Chih, Yih Wang, Jonathan Chang, Ya-Chin King, Chrong Jung Lin
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Improving the Ferroelectric Properties of Nd:HfO$_{\text{2}}$ Thin Films by Stacking Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$ Interlayers IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Yongguang Xiao, Yong Jiang, Lisha Yang, Ningjie Ma, Gang Li, Jun Ouyang, Minghua Tang
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Passing Word Line-Induced Subthreshold Leakage Reduction Using a Partial Insulator in a Buried Channel Array Transistor IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Suyeon Kim, Dong Young Kim, Je Won Park, Shinwook Kim, Seungchan Lee, Han Seung Jang, Jinseok Park, Sunyong Yoo, Myoung Jin Lee
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Wafer-Scale GaN-Si(100) Monolithic Heterogeneous Integration Inverters With Improved Output Voltage Swing and Fast Switching Capability by Transfer Printing and Self-Aligned Etching Technology IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Yutong Fan, Weihang Zhang, Zhihong Liu, Shenglei Zhao, Yang Jiang, Pui In Mak, Yue Hao, Jincheng Zhang
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Asymmetric and Double-Layered Gate-All-Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Semyung Kwon, Ilgu Yun
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Broadening Bandwidth of Extended Interaction Klystron Through Nonperiodic Perturbations IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-10 Naining Guo, Zhaowei Qu, Qianzhong Xue, Kegang Liu, Wenke Song, Haibing Ding
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High Wall-Plug Efficiency AlGaN Deep Ultraviolet Micro-LEDs Enabled by an Etched Reflective Array Design for High Data Transmission IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-09 Yiming Yang, Yuqi Hou, Feng Wu, Zhihua Zheng, Shizhou Tan, Dan Xu, Linlin Xu, Chao Shen, Nan Chi, Jiangnan Dai, Changqing Chen
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The Surge Current Failure and Thermal Analysis of 4H-SiC Schottky Barrier Diode IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-09 Bin Zhang, Yu Zhong, Peng Cui, Yingxin Cui, Mingsheng Xu, Handoko Linewih, Jisheng Han
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High-Performance Flexible Near-Infrared-II Phototransistor Realized by Combining the Optimized Charge-Transfer-Complex/Organic Heterojunction Active Layer and Gold Nanoparticle Modification IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-09 Jia Shi, Yurui Wang, Bo Yao, Yuxing Chen, Qing Yu, Xinmin Lv, Shiyan Liu, Yan Li, Tiantian Zhang, Gang He, Zebo Fang
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Heavily Doped Channel Carrier Mobility in $\beta$-Ga$_{\text{2}}$O$_{\text{3}}$ Lateral Accumulation MOSFET IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-09 Song-Hyeon Kuk, Seongjun Choi, Hyeong Yun Kim, Kyul Ko, Jaeyong Jeong, Dae-Myeong Geum, Jae-Hoon Han, Ji-Hyeon Park, Dae-Woo Jeon, Sang-Hyeon Kim
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Demonstration of a Low-Voltage High-Efficiency Continuous-Wave Millimeter-Wave Gyrotron IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-09 Dun Lu, Wenjie Fu, Mikhail Glyavin, Alexey Fedotov, Qinglin Zeng, Yibo Pan, Yang Yan
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Strain Evolution in SiGe Nanosheet Transistor Process Flow IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Hung-Chun Chou, Tao Chou, Shee-Jier Chueh, Sun-Rong Jan, Bo-Wei Huang, Chien-Te Tu, Yi-Chun Liu, Li-Kai Wang, C. W. Liu
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A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/ Unipolar Metal Oxide RRAMs IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Yueyang Jia, Sheng Shen, Maosong Xie, Pengcheng Zhang, Minliang Shen, Rui Yang
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Hydrothermally Synthesized WS$_{\text{2}}$-QDs/Si (0-D/3-D) Vertical Heterojunction for an Efficient Wide Spectral (UV–Vis–NIR) Photodetection IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Yashwant Puri Goswami, Prashant Kumar Gupta, Amritanshu Pandey
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Comprehensive Investigation of Shelf Life and Performance of Flexible Hybrid RRAM Devices With PVK:MoS$_{\text{2}}$/TiO$_{\text{2}}$ Bilayer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Shalu Saini, Anil Lodhi, Anurag Dwivedi, Arpit Khandelwal, Shree Prakash Tiwari
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Rational Design of Different Ga Content Bilayer InGaZnO Thin-Film Transistors With Al$_{\text{2}}$O$_{\text{3}}$/HfO$_{\text{2}}$ Passivation Layer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Patigul Nurmamat, Ablat Abliz
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Temperature, Sensitivity, and Frequency Response of AlN/GaN Heterostructure Micro-Hall Effect Sensor IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Satish Shetty, Savannah R. Eisner, Ayesha Hassan, Anand Lalwani, Dinesh Baral, Yuriy I. Mazur, Debbie G. Senesky, H. O. H. Churchill, Zhong Chen, H. Alan Mantooth, Gregory J. Salamo
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Honeycomb-Inspired Interconnects for Large-Area Flexible Circuits: Simulation and Modeling IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Ananya Bhattacharjee, Ratul K. Baruah
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Mo/Au $\beta $-Ga$_{\text{2}}$O$_{\text{3}}$ Schottky Barrier Diodes With Low Turn-On Voltage and High On–Off Ratios for Low-Power Consumption Applications IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Fang Zhang, Xuefeng Zheng, Yunlong He, Wen Hong, Shaozhong Yue, Zijian Yuan, Yehong Li, Yuehua Hong, Yanrong Cao, Ling Lv, Yingzhe Wang, Xiaoli Lu, Xiaohua Ma, Yue Hao
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Aging-Aware LTPO DTCO for Large-Scale Integrated Circuit-Driven Flexible Intelligent Sensing System IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Shuaidi Zhang, Xiaofan Sun, Weiye Tang, Yuanwei Song, Haitao Zhou, Lu Huang, Zhongyi Sun, Weiwei Li, Qirui Ren, Di Geng, Zhicheng Wu, Zhinong Yu, Lingfei Wang, Feng Zhang, Ling Li
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Highly Selective and Sensitive Ag-Based Hydrogen Sulfide Gas Sensor Based on Precise Chip Temperature Management IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Xin Tian, Jifang Tao, Maosen Xu, Hongye Yuan, Jia Zhao
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Hybrid Edge Termination for High-Voltage Vertical GaN Devices: Empirical Validation and Robust Processing Tolerance IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Prakash Pandey, Tolen M. Nelson, Michael R. Hontz, Daniel G. Georgiev, Raghav Khanna, Alan G. Jacobs, James S. Lundh, James C. Gallagher, Andrew D. Koehler, Karl D. Hobart, Travis J. Anderson
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Modeling Thermal Effects for 28-nm Node Fully Depleted SOI Devices Under Cryogenic Temperatures IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-08 Ziyi Wang, Michael Povolotskyi, Dragica Vasileska
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Novel T-Shaped Gate With Air Gap for AlGaN/GaN HEMTs on Silicon With High Johnson’s Figures of Merit IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-05 Xiaoyi Liu, Jingxiong Chen, Yuanxi Jiang, Kairan Bian, Hong Wang
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An Analytical Approach for Evaluating Turn-On Switching Losses in SiC MOSFET With Kelvin Pin: Concept and Implementation IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-05 O. Mohammed Cherif, B. Nadji, S. A. Tadjer, H. Bencherif
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A Novel Physics Aware ANN-Based Framework for BSIM-CMG Model Parameter Extraction IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-05 Anant Singhal, Girish Pahwa, Harshit Agarwal
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Atomic-Layer-Deposited In–Sn–O Thin-Film Transistors With Robust Thermal Stability at 400 $^{\circ}$C and Downscaling of Channel IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-05 Binbin Luo, Xiaohan Wu, Wei Meng, Wen Xiong, Bowen Wang, Bao Zhu, Shi-Jin Ding
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Systematic Study of the Incorporation of Quantum-Coupling 2-D Materials in the FET Gate/Channel Stack for Steep Subthreshold Slope IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-05 Parameswari Raju, Herwen Xu, Hao Zhu, Dimitris E. Ioannou, Qiliang Li
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Effects of Deposition Power and Thermal Treatment on Ferroelectric Properties of Sputtered Hf$_\text{0.5}$Zr$_\text{0.5}$O$_\text{2}$ IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-03 Changhyeon Han, Ki Ryun Kwon, Jiyong Yim, Jeonghan Kim, Sangwoo Kim, Soi Jeong, Eun Chan Park, Ji Won You, Rino Choi, Daewoong Kwon
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Energy-Efficient Brain Floating Point Convolutional Neural Network Using Memristors IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-02 Shao-Qin Tong, Han Bao, Jian-Cong Li, Ling Yang, Hou-Ji Zhou, Yi Li, Xiang-Shui Miao
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UV Photonic Integrated Chip Based on Epitaxial III-N on Si for Short-Range On-Chip Data Transmission IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-02 Jiabin Yan, Zhihang Sun, Li Fang, Hao Zhang, Fan Shi, Jiecheng Huang, Zheng Shi, Yongjin Wang
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Parasitic Capacitance in Nanosheet FETs: Extraction of Different Components and Their Analytical Modeling IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-02 Aishwarya Singh, Om Maheshwari, Nihar R. Mohapatra
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Spin Logic Devices Via Electric Field Control of Field-Free Spin-Orbit Torque Switching With Bilateral Voltages IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 An Yang, Yanfeng Jiang
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Reinterpreting Low Resistance in Sb–MoS$_\text{2}$ Ohmic Contacts by Means of Ab Initio Transport Simulations IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Daniel Lizzit, Marco Pala, Francesco Driussi, David Esseni
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Improved Environmental Stability of InSnO Thin-Film Transistor by Interface Engineering IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Xinnan Zhang, Lei Xu, Ruyu Liang, Shi Zong, Junming Li, Zhihua Zhu, Shijun Luo, Zengcai Song, Xingqiang Liu
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Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Yuji Ando, Kensuke Oishi, Hidemasa Takahashi, Ryutaro Makisako, Akio Wakejima, Jun Suda
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High-Performance 3-D Silicon-Embedded Coupled Solenoid Inductors With Inserted Magnetic Core IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Pichao Pan, Changnan Chen, Jiebin Gu, Min Liu, Xinxin Li
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A Vacuum Transistor Based on Electron Emission From SiO$_{\textit{x}}$ Tunneling Diodes IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Yidan He, Hanyang Zang, Jun Yao, Zhiwei Li, Gengmin Zhang, Xianlong Wei
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Write-Once-Read-Many-Times Nonvolatile Memory Characteristics of Sol–Gel Hafnium Zirconium Oxide IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-04-01 Wun-Ciang Jhang, Tsung-Chun Hsieh, Xuan-Zhi Zhang, Zi-Rong Qiu, Chih-Chieh Hsu, Mojtaba Joodaki
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Analysis of Effects of Defects on Degradation Mechanism of 1200-V/40-A 4H-SiC Junction Barrier Schottky Diodes Induced by High-Reserve Bias Stress IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-29 Jinlan Li, Tao Ding, Liming Zhou, Ziheng Wu
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Enhancing the Hole Injection in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes With Engineered p-AlGaN Hole Supplier Layer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-29 Ying Qi, Wentao Tian, Mengran Liu, Shuti Li, Chao Liu
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Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf$_{\text{0}.\text{5}}$Zr$_{\text{0}.\text{5}}$O$_{\text{2}}$: Interfacial Layer Soft Breakdown and Physical Modeling IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-29 Chen-Yi Cho, Tzu-Yi Chao, Tzu-Yao Lin, I-Ting Wang, Sourav De, Yu-Sheng Chen, Yi-Ching Ong, Yu-De Lin, Po-Chun Yeh, Tuo-Hung Hou
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Strain-Induced Performance Variation in Stretchable Carbon-Nanotube Thin-Film Transistors and the Solution Through a Circular Channel Design IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-28 Can Wu, Donglai Zhong, Weichen Wang, Yuanwen Jiang, Yuya Nishio, Yujia Yuan, Qianhe Liu, Jeffrey B.-H. Tok, Zhenan Bao
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Noise Robust Reservoir Computing Based on Flexible Doped Hafnium Oxide Memcapacitors IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-28 Qianye Xing, Mengjiao Pei, Lesheng Qiao, Baocheng Peng, Kailu Shi, Xiao Fang, Hangyuan Cui, Changjin Wan, Qing Wan
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Investigation of Prepulse of SiC Drift Step Recovery Diode in Fast Interruption Process IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-28 Xiaoxue Yan, Lin Liang, Zewei Yang, Hai Shang