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Enhanced Performance and Stability of Atomic Layer Deposited In2O3 Transistors with Multi-Function Cation-Doped ZnSnO Layers IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-26 Qiaoji Zhu, Yi Huang, Jianting Wu, Min Guo, Hai Ou, Baiquan Liu, Xubing Lu, Jun Chen, Xiaoci Liang, Qian Wu, Chuan Liu
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Optimal Design of 100–2000 V 4H–SiC Power MOSFETs using Multi-objective Particle Swarm Optimization Algorithms IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-26 Runding Luo, Botao Sun, Xinlan Hou, Wenhua Shi, Guoqi Zhang, Jiajie Fan
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Non-zero Power Flow Angles in Surface Acoustic Wave Resonators for Transverse Mode Suppression IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-26 Jinbo Wu, Shibin Zhang, Hulin Yao, Liping Zhang, Pengcheng Zheng, Xiaoli Fang, Yang Chen, Xiaomeng Zhao, Kai Huang, Tao Wu, Xin Ou
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Interstitial Alkali Metal Ions Regulating the Phase Distributions Enabling Efficient and Stable Red Perovskite Light-Emitting Diodes IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-26 Yuanzhi Wang, Lin Wang, Xingyu Shi, Junchuan Liu, Zirui Liu, Sheng Wang, Tao Chen, Xuyong Yang
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MBE-Grown MgO Thin Film Vacuum Ultraviolet Photodetector with Record High Responsivity of 3.2 A/W Operating at 400 °C IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-26 Lianjie Xin, Kewei Liu, Yongxue Zhu, Jialin Yang, Zhen Cheng, Xing Chen, Binghui Li, Lei Liu, Dezhen Shen
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Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25
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Low Dark Current HgCdTe Long Wavelength Infrared Photodiodes with Bandgap Gradient Multi-Layer Heterojunction IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Liqi Zhu, Tianxiang Wu, Zihao Wang, Xi Wang, Xun Li, Songmin Zhou, Zhikai Gan, Chun Lin, Baile Chen
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IEEE Electron Device Letters Publication Information IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25
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IEEE Electron Device Letters Information for Authors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25
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Mode-Switchable Localized Surface Plasmon Resonator for W/D Dual-Band CMOS Oscillator IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Guoqing Dong, Yizhu Shen, Sanming Hu
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GaN-based HEMT-type VUV Phototransistors with Superior Triple-mode Photodetection IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Fangzhou Liang, Haochen Zhang, Siqi Zhu, Lei Yang, Zhe Huang, Kun Liang, Zhanyong Xing, Hu Wang, Mingshuo Zhang, Jiayao Li, Yankai Ye, Haiding Sun
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8F 2 Ternary Content Addressable Memory Array Utilizing Interface Passivated Ge Memory-diodes with 2 × 105 Self-rectifying Ratio IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Xiang Ding, Huimin Zhang, Xianggao Wang, Xiaofeng Zhou, ChoongHyun Lee, Yi Zhao
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Micro-Pirani Pressure Sensor with Operation Range beyond Atmospheric Pressure based on Aligned Carbon Nanotube Films IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Yuwei Wang, Chenxi Liu, Jun Qiu, Yidan He, Zhiwei Li, Peng Liu, Xianlong Wei
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High figure-of-merit film bulk acoustic wave resonator based on Al0.87Sc0.13N film prepared using a novel dual-stage method IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Lishuai Zhao, Peidong Ouyang, Xinyan Yi, Guoqiang Li
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Compact and High Steep Skirts Hybrid Heterogeneous Integrated N77 Full band BAW Filter Based on Band-stop Theory IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Rui Ding, Weipeng Xuan, Feng Gao, Hong Jiang, Wei Wang, Hao Jin, Jikui Luo, Shurong Dong
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Aluminum nitride MEMS resonant pressure gauges without vacuum packaging IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Haolin Li, Qingrui Yang, Hexu Luo, Yi Gong, Ye Yuan, Pengfei Niu, Bohua Liu, Chongling Sun, Menglun Zhang, Wei Pang
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IEEE Transactions on Electron Devices Table of Contents IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25
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Scaling Effects on Memory Characteristics of Ferroelectric Field-effect Transistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Kitae Lee, Jiyong Yim, Wonjun Shin, Sihyun Kim, Daewoong Kwon
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Graphene quantum dots enhanced graphene/Si deep ultraviolet avalanche photodetectors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Zhi-Xiang Zhang, Zongwen Li, Jian Chai, Yue Dai, Yance Chen, Yunfei Xie, Qianqian Zhang, Dajian Liu, Xuemeng Fan, Shangui Lan, Yuan Ma, Youshui He, Zheng Li, Yuda Zhao, Peijian Wang, Bin Yu, Yang Xu
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Organic inorganic hybrid integrated optical waveguide gain compensator based on CsPbBr3 perovskite nanocrystals IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Xiangyi Sun, Yongzhi Shao, Chunxue Wang, Jian Yue, Anqi Cui, Siliang Tao, Shuangshuang Wang, Daming Zhang, Donglei Zhou, Changming Chen
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Improved Specific Contact Resistivity in Amorphous IGZO Transistors using an ALD-Derived Al-Doped ZnO Interlayer IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-25 Joo Hee Jeong, Seong Hun Yoon, Seung Hee Lee, Bong Jin Kuh, Taikyu Kim, Jae Kyeong Jeong
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High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-22 Yifu Wang, Zhiyuan Wang, Weizong Xu, Feng Zhou, Dong Zhou, Fangfang Ren, Dunjun Chen Rong Zhang, Youdou Zheng, Hai Lu
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The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-20 Yu-Chun Li, Xiao-Xi Li, Zi-Ying Huang, Xiao-Na Zhu, David Wei Zhang, Hong-Liang Lu
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Unraveling the Discrepancy on Persistent Photoconductivity between Organic Single-Crystal and Thin-Film Phototransistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-19 Cong Zhang, Xiaoli Zhao, Mingxin Zhang, Juntong Li, Hongyan Yu, Yanping Ni, Zhipeng Wei, Yanhong Tong, Qingxin Tang, Yichun Liu
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Tunneling Transistor with a Stacked Floating Electrode for Current Saturation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-18 Su Jin Heo, Jeong Hee Shin, Junghyup Lee, Jae Eun Jang
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2.5kV/3.78mΩ·cm2 Low Forward Voltage Vertical β-Ga2O3 Schottky Rectifier with Field Plate assisted Deep Mesa Termination IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-18 Jiangbin Wan, Hengyu Wang, Ce Wang, Haoyuan Chen, Chi Zhang, Luanxi Zhang, Yanjun Li, Kuang Sheng
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Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 A. Ranjan, A. Padovani, B. Dianat, N. Raghavan, K.L. Pey, S.J. O’Shea
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Ultrahigh-Sensitivity Coupled Cantilever and Dual-cavity Piezoelectric Micromachined Ultrasonic Transducers IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Yi Gong, Menglun Zhang, Miaojie Liu, Shaobo Gong, Quanning Li, Xuejiao Chen, Wei Pang
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High-responsivity van der Waals Schottky photodiodes based on maskless etched wafer-scale silicon nanoholes IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Zhaohui Yang, Gaobin Xu, Shirong Chen, Yongqiang Yu, Baichuan Sun, Cunhe Guan, Jianguo Feng, Yuanming Ma, Xing Chen
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Experimental Demonstration of a 10-kW-Level G-band Gyro-TWT IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Wei Jiang, Chaoxuan Lu, Jianwei Zhou, Boxin Dai, Guo Liu, Jianxun Wang, Yelei Yao, Binyang Han, Wei Zhou, Yong Luo
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Understanding the degeneration of neurons from NbOx-based threshold device by an unhappy environment IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Ao Chen, Zhennan Lin, Guokun Ma, Rui Xiong, Qiming Liu, Hao Wang
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Virtual-Body p-GaN Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Junjie Yang, Maojun Wang, Jingjing Yu, Yanlin Wu, Jiawei Cui, Teng Li, Han Yang, Jinyan Wang, Xiaosen Liu, Xuelin Yang, Bo Shen, Jin Wei
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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes with Avalanche Capability IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-13 James Spencer Lundh, Alan G. Jacobs, Prakash Pandey, Tolen Nelson, Daniel G. Georgiev, Andrew D. Koehler, Raghav Khanna, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson
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Bias Potential Mediated NO2 Gas Sensor with NiCo2O4 Hollow Micro-spheres IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-12 Julaiba T. Mazumder, Aman Nanda, Jyoti R. Mandal, Anshul Yadav, Ravindra K. Jha
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Regulation NO and NH₃ Sensing of Organic Transistors via Synergy of Bias-Stress Effect and Photoexcitation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Guodong Zhao, Yanhong Tong, Qingxin Tang, Yichun Liu
Bias-stress effect causing undesirable charge trapping and performance degradation are considered huge obstacles for high-performance organic transistors. Besides the extra effort to suppress it, it is innovative to use the synergy of bias-stress effect and photoexcitation to pre-regulate traps and effectively regulate the response and selectivity of organic transistor to NO and NH3. The transistor-type
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Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Douglas R. Dykaar, Hrilina Ghosh, Songrui Zhao, Siva Sivoththaman
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First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Jung-Han Hsia, Joshua Andrew Perozek, Tomáas Palacios
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High-Performance Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Haifan You, Haiping Wang, Weike Luo, YiWang Wang, Xinghua Liu, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen
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Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Nicolò Zagni, Giovanni Verzellesi, Alessandro Bertacchini, Mattia Borgarino, Ferdinando Iucolano, Alessandro Chini
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Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-05 Yibo Liu, Guobin Wang, Feng Feng, Zichun Li, Ke Xu, Hoi Sing Kwok, Zhaojun Liu
Ultraviolet-A (UVA) micro-LEDs are increasingly garnering attention in fields such as additive manufacturing. However, the majority of these devices currently use heteroepitaxial substrates, where high stress from lattice mismatch leads to strong polarization and high dislocation densities, severely limiting the optoelectronic performance. This letter explores the characteristics of homoepitaxially
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Demonstration of a PECVD SiO x -Based RRAM Dendritic Device IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 S. Roy, E. Bhattacharya, B. Chakrabarti
Synaptic plasticity has been traditionally credited for learning in the brain. The prevalent view on learning through synapses forms the backbone behind all the significant developments in the area of artificial neural networks (ANN). However, more recent studies in Neuroscience reveal that dendritic junctions play a crucial role in the dynamics of learning, leading to increased efficiency and faster
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IEEE Electron Device Letters Information for Authors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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A TFT-Based Active Pixel Sensor With Dynamic Range > 100dB, Gain > 10 and Broad Spectral Response From Near-UV to Near-IR, Enabling In-Display Sensor Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Weisheng Wu, Yitong Xu, Xianming Li, Xinghui Liu, Fei Liu, Kai Wang
In-display optical and image sensors add functions and values to display panels to form smarter and more interactive displays. A randomly-accessible active pixel sensor (APS) based on a double-gate amorphous silicon TFT is proposed and studied in this work. The proposed APS has low off current ( $< 10^{-{12}}\text{A}$ ), wide dynamic range of >100dB, and high gain of >10 from 300nm to 1100nm wavelengths
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Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Been Kwak, Kitae Lee, Sihyun Kim, Daewoong Kwon
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Single-Crystalline Bulk Acoustic Wave Resonators Fabricated With AlN Film Grown by a Combination of PLD and MOCVD Methods IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Peidong Ouyang, Xinyan Yi, Guoqiang Li
Among the various methods that have been utilized to enhance the efficiency of Bulk Acoustic Wave (BAW) filters, the AlN piezoelectric layer quality improvement demonstrates robust functionality and operability. A combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD) methods of growing III-nitride films, the MEMS wafer process based on which was then constructed
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Resolving Issues of VTH and ILeak for P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Chih-Lung Lin, Yi-Chien Chen, Po-Cheng Lai, Jui-Hung Chang, Ting-En Wei, Cheng-Yi Huang
This work proposes an emission (EM) gate driver that is based on p-type low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and (VTH variation in LTPS TFTs is improved by enhancing the driving
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First Demonstration of an N-Polar InAlGaN/GaN HEMT IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Robert Hamwey, Nirupam Hatui, Emre Akso, Feng Wu, Christopher Clymore, Stacia Keller, James S. Speck, Umesh K. Mishra
In this letter, we report the first N-polar InAlGaN quaternary back barrier high-electron-mobility transistor (HEMT). The epitaxial device heterostructure was grown by metal organic chemical vapor deposition (MOCVD). Hall measurements of the heterostructure showed a two-dimensional electron gas (2DEG) density of $2.85\times 10^{{13}}$ cm $^{-{2}}$ and a mobility of 1048 cm $^{{2}}\,\,\text{s}^{-{1}}\
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The 10th IEEE World Forum on the Internet of Things (IoT) IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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IEEE Electron Device Letters Publication Information IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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Enhancing Carrier Transport and Injection of Ga2O3 Deep-Ultraviolet Schottky Photodiode by Introducing Impurity Energy Level IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Li-Li Yang, Zeng Liu, Shan Li, Mao-Lin Zhang, Zhao-Ying Xi, Qiang Xu, Si-Han Yan, Yu-Feng Guo, Wei-Hua Tang
In this letter, a Ti/Sn-Ga2O3/Ni Schottky photodiode device was achieved by a rarely-reported PECVD technology. Benefitting from the introduction of Sn impurity energy level, which provides extra paths for carriers’ generation and helps create a stronger built-in electric field to facilitate carriers’ separation, the carrier transport and injection efficiency of device are collaboratively enhanced
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The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Giulio Galderisi, Thomas Mikolajick, Jens Trommer
We present the hardware implementation of a reconfigurable universal logic gate, that we call RGATE, able to deliver up to eight different logic functionalities and based on a symmetric four-transistors cell. The polymorphic logic gate is realized with three-gated Reconfigurable Field Effect Transistors. Fabrication and electrical characteristics of the elements are discussed. To validate the presented