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Multi‐conductor electromagnetic coupling model for sensitive wires subject to driven wire in complex electronic systems Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-17 Fan Jiang, Lulu Chen, Bing Xue, Xinxin Tian, Liang Hua Ye, Jian‐Feng Li, Duo‐Long Wu
A novel multi‐conductor electromagnetic coupling model for the sensitive‐wire subject to driven wire in a high‐precision machining workbench is proposed in this paper. The general coupling model for an N‐wire system is derived and is used to evaluate the wire coupling effect. Furthermore, 4‐wire and 3‐wire models are demonstrated to verify the accuracy through full‐wave electromagnetic simulation below
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Study on single‐mode transmission in non‐radiative dielectric waveguide Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-17 Keisuke Kazama, Md. Iquebal Hossain Patwary, Akito Iguchi, Yasuhide Tsuji
In order to develop millimeter‐wave integrated circuits, low‐loss and compact waveguide devices have been intensively investigated in recent years. Non‐radiative dielectric waveguide (NRD guide) is expected to be a platform for millimeter‐wave and THz‐wave circuits because of its non‐radiative nature. However, conventional NRD guides support and modes simultaneously and mode conversion between these
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Loss parameter identification of a welded ring core lamination of NO‐electrical steel Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-12 David Ukwungwu, Kay Hameyer
Lamination packaging processes such as welding lead to a significant material degradation of non‐oriented (NO) electrical steel sheets. Increase in iron loss and decrease in permeability are the results of the deterioration. For an efficient modeling of a drive train, the accurate parameterization of the iron loss is of upmost importance. For this reason, the iron loss model is expanded to include
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Dielectrically modulated hetero‐material double gate tunnel field‐effect transistor for label free biosensing Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-12 Ifrah Shakeel, Shazia Rashid, Farooq A. Khanday, Mudasir A. Khanday
This work proposes a novel double gate hetero‐material tunnel field effect transistor for label free biosensing applications. The device consists of III‐V semiconductor gallium arsenide (GaAs) which serves as a substrate. Source and drain regions made of Germanium are used due to its compatibility with GaAs. Cavities of 15 × 1.5 nm are created near source‐channel junctions for the biomolecules to be
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A nonuniform linearized Galerkin-spectral method for nonlinear fractional pseudo-parabolic equations based on admissible regularities Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-10 M. Fardi, S. Mohammadi, A. S. Hendy, M. A. Zaky
In this paper, we deal with the nonlinear fractional pseudo-parabolic equations (FPPEs). We propose an accurate numerical algorithm for solving the aforementioned well-known equation. The problem is discretized in the temporal direction by utilizing a graded mesh linearized scheme and in the spatial direction by the Galerkin-spectral scheme. We investigate the stability conditions of the proposed scheme
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A novel adaptive control design for exponential stabilization of memristor‐based CVNNs with time‐varying delays using matrix measures Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-11 N. Jayanthi, R. Santhakumari, R. Grienggrai Rajchakit, M. Praneesh
The present study introduces a new adaptive control framework that aims to attain exponential stability in complex‐valued neural network systems utilizing memristors while accounting for time‐varying delays. The control issues in systems of this nature are mostly attributed to the presence of memristors and time‐varying latency. To overcome these challenges and achieve stabilization outcomes, a methodology
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Channel engineering for optimizing the electro‐thermal characteristics in p‐type GAA nanosheet transistors Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-03 Afshan Khaliq, Munir Ali, Muhammad Mateen, Shihua Huang
In this paper, we report simulation results for capacitance–voltage characteristics and temperature distribution in the cross‐section of p‐type gate‐all‐around nanosheet channel using an in‐house developed numerical simulator. The effects of material, channel width, and crystallographic orientation on electrical and thermal properties of p‐type nanosheet transistor are comprehensively investigated
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Neural network-based simulation of fields and losses in electrical machines with ferromagnetic laminated cores Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-02 Florent Purnode, François Henrotte, Gilles Louppe, Christophe Geuzaine
Due to the distribution of eddy currents inside ferromagnetic laminations, the accurate modeling of magnetic fields and losses in the laminated cores of electrical machines requires resolving individual laminations with a fine 3D discretization. This yields finite element models so huge and costly that they are unusable in daily industrial R&D. In consequence, hysteresis and eddy currents in laminations
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Simulation and numerical modeling of CuO films thickness influence on the efficiency of graphite/CuO/Ni solar cells Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-01 Serhii I. Kuryshchuk, Galyna O. Andrushchak, Taras T. Kovaliuk, Andriy I. Mostovyi, Hryhorii P. Parkhomenko, Sanjay H. Sahare, Mykhailo M. Solovan, Viktor V. Brus
Copper oxide is one of the original semiconductor materials employed for solar cells in the early 19th century before Silicon solar cells became popular due to their abundant availability, and eco‐friendly nature. The optoelectronic parameters signify its huge potential in solar cell devices, though it's far from the theoretically predicted performance, provides tremendous scope to improve the solar
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DC‐bias and temperature included CSWPL model for RF power transistors Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-04-01 Enduo Liu, Xiaoqiang Tang, Giovanni Crupi, Jialin Cai
A novel frequency domain behavioral modeling method for gallium‐nitride (GaN) devices is presented in this article. By utilizing a multi‐dimensional polynomial function, the proposed technique interpolates DC‐bias voltage and temperature based on the Canonical section‐wise piecewise linear (CSWPL) model framework. A detailed description of the model's theory is provided. With data from 10‐W GaN devices
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Advanced tree-seed optimization based fractional-order PID controller design for simplified decoupled industrial tank systems Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-21 Achu Govind Kottayathu Rajagopalan, Subhasish Mahapatra, Soumya Ranjan Mahapatro
Controlling coupled tank systems is challenging due to interactions between tanks, nonlinear dynamics, time delays, uncertainties, and cross-coupling effects. The design of effective control strategies to address these complexities while ensuring stability and robust performance is difficult. Hence, this study focuses on presenting an innovative approach to enhance level control in coupled tank systems
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An energy‐efficient tunable threshold spiking neuron with excitatory and inhibitory function Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-16 Mudasir A. Khanday, Farooq A. Khanday
In this work, a complementary metal‐oxide‐semiconductor (CMOS) based leaky‐integrate and fire neuron has been proposed and investigated for neuromorphic applications. The neuron has been designed in Cadence Virtuoso and validated experimentally. It has been observed that the neuron consumes a maximum energy of 68.87 fJ/spike. The response of the neuron to excitatory as well as inhibitory inputs has
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A novel optimized fractional order system for tuning biological parameters Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-06 Tapaswini Sahu, Madhab Chandra Tripathy, Ranjan Kumar Jena
In contemporary biological research and applications, control systems have become indispensable for understanding and managing the intricate dynamics of the human biological system. Given the critical role of components such as the pancreas structure, protein formation, insulin and glucose regulation, and the genetic regulatory network (GRN), any disturbances in these systems can lead to severe health
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A multi‐objective optimization approach for beam pattern synthesis of UAV virtual rectangular antenna array Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-09 Fang Mei, Xinrong Guo, Hui Kang, Geng Sun, Tingting Zheng, Jianbo Wen
Virtual antenna array (VAA) formed by unmanned aerial vehicle (UAV) antenna units using collaborative beamforming (CB) technology plays an important role in the air communication system, and can be used in radar, military, disaster rescue and other places. However, there are still some issues with the beam pattern formed by this method, such as high sidelobe level (SLL), high cost and low efficiency
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Assessment of BTI‐induced deterioration in vacuum based undoped structure Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-09 Rakesh Kumar, Meena Panchore
In this paper, an assessment of bias temperature instability (BTI) in based dual gate dopingless JLFET (HKV‐DLJLFET) is carried out at 15 nm technology node. For this, the gate dielectric of HKV‐DGDLJLFET is made of asymmetric combination of and vacuum dielectrics near the source/drain (S/D) side, which significantly minimizes the leakage current and enhances the reliability. Our simulation study have
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A multiphysics SET modeling method based on machine learning Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-03-01 Ting Xu, Yanping Guo, Jiaxin Chen, Jianhui Bu, Libo Gao, Tao Ni, Bo Li
With continuous downscaling of transistor sizes, the sensitivity to single event effect (SET) has become one of the most important reliability issues for aerospace integrated circuits. Besides the SET, integrated circuits will be affected by multiphysics such as temperature and voltage when working in space. Currently, the commonly used modeling methods are based on physical mechanisms and the double
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Analytical model for the drain and gate currents in silicon nanowire and nanosheet MOS transistors valid between 300 and 500 K Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-02-23 Antonio Cerdeira, Magali Estrada, Michelly de Souza, Marcelo A. Pavanello
This work presents an analytical model for the drain and gate currents of silicon nanowire and nanosheet MOS transistors valid in all operating regions in the temperature range from 300 to 500 K. Analytical models for the tunneling components as well as for the reversely biased drain‐to‐channel PN junction are presented. Also, the models accounting for the necessary modifications in the silicon physical
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Triple band frequency selective surface design for 5G mm-wave communication with artificial neural networks Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-02-14 Ufuk Şahin, Elif Seher Serinken, Revna Acar Vural, Nurhan Türker Tokan
High-performance frequency selective surfaces (FSSs) have gained attention for their spatial filtering characteristics in 5G communication systems. In this work, we propose an efficient and accurate design methodology for the FSS. Three different artificial neural network methods (ANN) are employed, and their performances are compared for analysis and synthesis purposes. Results show that GRNN has
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Enhanced dynamic state estimation of regional new energy power system under different abnormal scenarios Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-02-07 Shuaibing Li, Ziwei Jiang, Yi Cui, Yongqiang Kang, Xingming Li, Hongwei Li, Haiying Dong
The high proportion of renewable energy sources in the power grid increases the failure probability of the system, which becomes a new challenge for the safe and stable operation of the regional power grid. To ensure stable control of the power network with substantial renewable energy integration, this article proposes a new method that combines the long short-term memory (LSTM) neural networks and
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A flexible energy management for distributed energy supplied smart home in microgrid connection with grid-connection/islanding mode functionality Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-24 Mehmet Büyük
In this study, a flexible control approach is presented for smart home with DES system in microgrid connection. The smart home with DES has operation capability under GC-Mode and I-Mode functions with the proposed control algorithm. The control algorithm is also developed in terms of international standards IEEE 929 and IEC 61727 for grid connection requirements. Additionally, a PLL-less control algorithm
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Radial basis function-based Pareto optimization of an outer rotor brushless DC motor Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-23 Omid Rahmani, Sayed Alireza Sadrossadat, Mostafa Noohi, Ali Mirvakili, Maitham Shams
This paper presents the development of an optimization and modeling method for the objective functions of output power, efficiency and weight of an outer rotor permanent magnet brushless DC (BLDC) motor based on radial basis function (RBF) approximation technique. The proposed RBF-based Pareto optimization method requires less knowledge about electric/magnetic formulas and can replace conventional
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Analytical modeling of recessed double gate junctionless field-effect-transistor in subthreshold region Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-18 Sandeep Kumar, Arun Kumar Chatterjee, Rishikesh Pandey
In this work, we have presented an analytical model for a recently proposed symmetrical recessed double gate junctionless field-effect transistor (R_DGJLFET) operating in subthreshold region. The model has been developed by solving a two-dimensional Poisson's equation in three continuous rectangular silicon regions, resulting in explicit expressions for surface potential, center potential, and eventually
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Additional findings on S-parameter bounds valid for unconditionally stable N-ports Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-21 Sergio Colangeli, Antonio Serino, Walter Ciccognani, Patrick E. Longhi, Ernesto Limiti
In a recent paper, it has been shown that, if an N-port network fulfills the condition of (geometrical) unconditional stability at a given frequency, then its scattering parameters will also necessarily satisfy N easily computable bounds, one per port. In order to complete that picture, this contribution investigates whether a tighter bound can be obtained by combining the N$$ N $$ bounds into just
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Open-set recognition of LPI radar signals based on a slightly convolutional neural network and support vector data description Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-22 Zhilin Liu, Tianzhang He, Tong Wu, Jindong Wang, Bin Xia, Liangjian Jiang
LPI radar signal recognition based on convolutional neural networks usually assumes that the signal to be recognized belongs to a closed set of known signal classes. In an open electromagnetic signal environment, this type of closed-set recognition method will experience a drastic drop in performance due to the encounter with unknown types of signals. We propose an SCNN-SVDD model based on a combination
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Fractional order capacitance behavior due to hysteresis effect of ferroelectric material on GaN HEMT devices Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-15 Dariskhem Pyngrope, Shubhankar Majumdar, Giovanni Crupi
In recent years, gallium nitride (GaN) high electron mobility transistors (HEMTs) have come to the forefront of the semiconductor industry because of their exceptional performance in both high-power and high-frequency utility. Accurate capacitance modeling is crucial to optimize performance and facilitate energy-efficient electronic circuit design. In order to reflect the complex nature of the aluminum
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Design and simulation of a germanium source dual-metal dopingless tunnel FET as a label-free biosensor Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-15 Sidhartha Dash, Shwetapadma Panda
This study presents a new dual-metal dopingless tunnel field effect transistor with a Germanium source (GeS-DM-DLT) for label-free biomolecule detection. Introducing a Ge source and dual-metal gate provides improved drain current. We have considered an L-shaped cavity at the top and bottom source metal region for investigating the sensitivity. The biosensor's sensitivity has been measured using the
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Adaptation and comparative analysis of HSPICE level-61 and level-62 model for a-IGZO thin film transistors Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-15 Divya Dubey, Manish Goswami, Kavindra Kandpal
This paper presents a Computer-aided design (CAD) model for a-IGZO thin film transistors (TFTs) by adapting SPICE level-61 RPI a-Si: H (Hydrogenated Amorphous Silicon) TFT model and level-62 RPI Poly-Si (Poly Silicon) TFT model. This work provides a complete understanding of SPICE level-61 and 62 model parameters, which must be tuned for a-IGZO TFT simulation. The adapted SPICE models of level-61 and
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Design of low-voltage low-noise operational transconductance amplifiers for low frequency applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-15 Kulbhushan Sharma, Ayush Kumar, Jaya Madan, Rahul Pandey
Low-noise and low-voltage operation is prime requirement of an operational transconductance amplifier for low frequency applications. However, achieving low-noise operation at low supply voltages is a challenging task in CMOS technology owing to noise-power and noise-stability tradeoffs. This article outlines, the design of four differential bias self-cascode (DBSC) operational transconductance amplifiers
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Equation chapter 1 section 1 topology property analysis and application of stable time-delay regions for linear multiple time-delay systems Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-10 Shaobu Wang, Xiaoyuan Fan
This study examines the relationship between the topology of stable time-delay regions and the stability analysis of an linear multiple time delay system. To analyze the topology of stable time-delay regions, we construct a function with a value equal to zero for the time-delay points on the boundaries of stable time-delay regions. The function is continuous and differentiable in the whole defining
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A behavioral model for RF vector-sum phase shifter Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-10 Hao Li, Binjie Jin, Yunqiu Wu, Chenxi Zhao, Yiming Yu, Huihua Liu
In this article, a behavioral model for RF vector-sum phase shifters is developed to estimate their behavioral and guide the phased-array front-end system design. According to their building blocks, the model consists of two typical parts, quadrature signal generator and variable gain amplifiers (VGAs). The modeling process for the quadrature signal generator is based on a complex curve fitting method
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Non-uniform doping dependent electrical parameters of dual-metal gate all around junctionless accumulation-mode nanowire FET (DMGAA-JAM-NWFET) Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-10 Sumedha Gupta, Neeta Pandey, R. S. Gupta
This paper presents an analytical analysis of a dual-metal gate all around junctionless accumulation-mode nanowire FET (DMGAA-JAM-NWFET) possessing a horizontal-like non-uniform doping profile. The 2-D electrostatic potential distribution is evaluated using Poisson's equation under the applicable boundary conditions. Also, the impact of straggle length parameter and the peak doping concentration upon
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Automatic multi-objective particle swarm optimization method for effective Doherty power amplifier design Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-11 Zefang Hao, Yan Qu, Jiajun Huang, Giovanni Crupi, Jialin Cai
In this paper, an automatic multi-objective particle swarm optimization (AMOPSO) method is developed for the design of Doherty power amplifiers (DPAs). In comparison to the well-known built-in optimizer available in commercial simulators, the proposed method not only reduces the optimization time, but also provides superior power added efficiency (PAE) for the final power amplifier. According to the
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Data-driven model-free modified nodal analysis circuit solver Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-10 Armin Galetzka, Dimitrios Loukrezis, Herbert De Gersem
This work introduces a novel data-driven model-free modified nodal analysis (MNA) circuit solver. The solver is capable of handling circuit problems featuring elements for which solely measurement data are available. Rather than utilizing hard-coded phenomenological model representations, the data-driven MNA solver reformulates the circuit problem such that the solution is found by minimizing the distance
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Finite Element Method study on VLF propagable modes coupling and interference in the anisotropic earth-ionosphere waveguide Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-10 Bing Liu, Maoyan Wang, Shitian Zhang, Hailong Li, Guiping Li, Mengxia Yu, Xiaochuan Zhang, Jun Xu
In this paper, the coupled-mode theory is incorporated into the improved frequency-domain finite element method (FEM) to simulate very low frequency (VLF) propagable modes coupling and interference in the anisotropic Earth-ionosphere waveguide. The matrix equation of the electric field is solved using parallel lower-upper factorization technique to speed up the calculation. The method used to determine
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Incorporating DC bias voltage in poly-harmonic distortion modeling for RF power GaN transistors Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2024-01-11 Shuhao Cheng, Xiaoqiang Tang, Zlatica Marinković, Giovanni Crupi, Jialin Cai
This paper presents a novel poly-harmonic distortion (PHD) model that incorporates the DC input and output bias voltages using Gaussian process regression (GPR). Simulation tests were conducted using a 10-W gallium nitride (GaN) HEMT transistor from Wolfspeed, and the model implementation test was performed in the Keysight Advanced Design System environment. The results showed that the GPR-based PHD
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Generalized memory polynomial input neural networks for nonlinear modeling in digital predistortion applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-19 Qin Mu, Nanxi Li, Ying Liu, Linsong Du, Xiaozheng Wei, Zixuan Long
The power amplifiers (PAs) will embody the nonlinear distortion if they work at saturation so as to increase efficiency. The neural network (NN)-based digital predistortion (DPD) is widely applied for the linearization of the PA in wireless communication. However, the current NN-based DPD schemes only focus on designing the NN hidden layer and ignore improving the NN input layer, which loses the degree
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Barrier and channel thickness engineering to optimize fin height for enhancement mode Al0.3Ga0.7N/GaN FinHEMT Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-14 A. Chakrabarty, R. Swain, N. Sahoo, K. Jena, A. K. Panigrahy, T. R. Lenka
In this work, a thorough analysis of the Al0.3Ga0.7N/GaN FinHEMT structure has been performed using three-dimensional numerical simulations to achieve enhancement mode (E-mode) operation. In the proposed optimized structure, the fin height (HFin) is comprised of 7 nm critical strained AlGaN barrier layer with 30% Al mole fraction and 63 nm GaN channel layer having a fixed fin width (WFin) of 160 nm
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Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT-SG) MOSFETs Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-14 Nitin Garg, Ashish Pandey, Avanish Kumar Pandey, Ashutosh Tyagi, Aniket Pratap Singh
The work investigates the effect of temperature variation on the linearity performance of Nanotube Junctionless Surrounding Gate (NT-SG) MOSFET. In this study, the linearity parameters of NT-SG MOSFET is investigated by changing the temperature range from 300 to 500 K using the Silvaco 3D Simulator. For the specified temperature range, characteristics including high-order trans-conductance (gm2 and
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PSO-GA-SVR model for S-parameters of radio-frequency power amplifier under different temperatures Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-14 Jiayi Wang, Shaohua Zhou
Support vector machine (SVR) has been introduced into the modeling of S-parameters in radio-frequency (RF) power amplifiers (PA). The modeling accuracy and speed of SVR are primarily affected by the penalty parameter c and the kernel function coefficient γ. Using the traditional grid search technique to determine these two parameters is time-consuming and labor-intensive, and ensuring the model's accuracy
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An industrial design of 400 V – 48 V, 98.2% peak efficient charger using E-mode GaN technology with wide operating ranges for xEV applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-12 Rajanand Patnaik Narasipuram, Subbarao Mopidevi
This paper offers a wide-operating range electric vehicle charger design by employing an interleaved inductor–inductor–capacitor iL2C DC–DC converter. It uses two parallel L2C converters with 8-GaN switches on the primary side and a shared rectifier circuit on the secondary side, which it also enhances the circulating current, conduction losses, and current sharing. For iL2C converter, a constant voltage
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Low-frequency noise model development of MoS2 field effect transistor and its analysis with respect to different traps Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-12-12 Vydha Pradeep Kumar, Deepak Kumar Panda
In this paper, an analytical drain current model of double gate MoS2 FET Transistor for low-frequency noise (LFN) power spectral density is developed, and compared its response with the device simulation of the proposed device structure. The developed low-frequency noise power spectral density (PSD) model is analyzed with respect to different Trap densities, Oxide thicknesses, and high K-dielectric
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Shifted Legendre method for solutions of Riccati type functional differential equations and application of RL circuit model Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-28 Deniz Elmacı, Şuayip Yüzbaşı, Nurcan Baykuş Savaşaneril
In order to solve the Riccati type functional differential equations under mixed condition, this research suggests a collocation approach based on shifted Legendre polynomials. These equations are seen in physics and electronic sciences. By means of the evenly spaced collocation points, the shifted Legendre polynomials, their derivatives and matrix forms, the method is constructed. It reduces the problem
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Optimum design of slot and magnet structure of permanent magnet synchronous generator with teaching-learning-studying-based optimization Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-23 Serhat Duman, Adem Dalcalı
From the point of production to consumption, electrical energy should be utilized effectively and qualitatively. Efficiency at the electricity consumption stage is not sufficient, and the desired criteria must be met at the production stage. The efficient and high-quality generation of electrical energy is directly related to the performance of the generator used. In order to achieve the desired criteria
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Analytical modelling of ultra-small group delay variation of ultra-broadband RF power amplifier using NSGA-II algorithm Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-21 Kunal Kumar, Sandeep Kumar, Binod Kumar Kanaujia
This paper proposes a ± 9.4 ps ultra-small group delay (GD) variation of fully integrated 65 nm complementary metal oxide semiconductor (CMOS) power amplifier (PA) over 6.5–17 GHz broadband for wireless application. The proposed CMOS PA is realised by using broadband stage, RLC inter-stage and power stage topologies. The non-dominated sorting genetic algorithm (NSGA-II) is employed for PA parameter
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A highly sensitive MOSFET gas sensor based on charge plasma and catalytic metal gate Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-15 Nisha Dewangan, Chithraja Rajan, Meena Panchore, Pushpa Raikwal
This manuscript presents, for the first time, a catalytic metal gate-based charge plasma (CP) MOSFET with improved sensitivity for gas detection applications. In this design, CP refers to the source and drain boundaries being marked by depositing metal electrodes with appropriate work function over the intrinsic silicon film. To sense hydrogen and oxygen gases, palladium (Pd) and silver (Ag) metals
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A new energy-conservative projection method for heterogeneous meshes of electromagnetic-thermal-stress simulations Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-15 Wei-Jie Wang, Yan-Nan Liu, Qiwei Zhan, Hai-Jing Zhou
Multiphysics coupling simulations are of great importance and challenge in engineering and industrial applications. A new efficient full-wave energy-conservative projection method between two heterogeneous meshes is proposed in this article, for the analysis of electromagnetic-thermal-stress coupling in the printed circuit boards (PCBs) and antenna arrays. The projected variables are directly chosen
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Dielectric modulated organic thin film transistor trench biosensor for label-free detection: Modeling and simulation analysis Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-15 Sheetal Bhandari, Triveni D. Dhamale, Rupali K. Kawade, Dipali N. Dhake, Girish Wadhwa
In the present paper, a biosensor is proposed with a split gate dielectric modulated bottom gate top contact organic thin-film transistor. A cavity is marked below gate metal for enhancing sensitivity in biomedical applications. The organic thin-film transistors-based biosensors have shown applications over advanced biosensing platforms due to their intrinsic ability to transfer and amplify received
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Single-differential difference current conveyor-based first-order VM/TAM universal filter and its applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-12 Ajishek Raj, Raj Senani, D. R. Bhaskar
A new first-order universal filter structure is presented in this article using a single differential difference current conveyor (DDCC). The proposed circuit can provide three first-order filter functions namely, high-pass filter (HPF), low-pass filter (LPF), and all-pass filter (APF) in voltage mode (VM) and transadmittance mode (TAM) both. A voltage amplifier with a gain of 2 is required for the
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Simulation and numerical modeling of high-efficiency CZTS solar cells with a BSF layer Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-12 Pratap Kumar Dakua, Deepak Kumar Panda, Savita Kashyap, Abdelmoumene Laidouci, Sadanand
The present paper deals with the photovoltaic performance-based numerical evaluation of copper–zinc–tin–sulfur (CZTS) solar cells embedded with CZTSe as a back surface field (BSF) layer. CZTS has been considered a leading candidate for the fabrication of solar devices owing to its availability and absence of toxicity. Adding a BSF layer to a solar device is a novel way to boost efficiency. It reduces
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Effect of lattice heating on the switching performance of a silicon-gate all around dielectric window spaced-multi-channel MOSFET Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-08 Ushodaya A. S. Yajula, G. P. Mishra, G. S. Sahoo
In this article, analysis of heating effect for a range of thermal resistance (Rth) and different ambient temperatures on the DC parameters of the proposed Silicon-Gate All Around Dielectric Window Spaced-Multi-channel (Si-GAA-DWS-multi-channel) MOSFET is carried out. The performance of the device is examined through 3D-ATLAS TCAD simulator, by performing the numerical and electrothermal analysis.
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An event-driven model of fractional-N CPPLL based FMCW synthesizers Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-11-06 Hao Li, Ernest Smith Mawuli, Zhao Xing, Huihua Liu, Yunqiu Wu, Chenxi Zhao, Yiming Yu, Jingzhi Zhang, Kai Kang
This paper proposes an improved event-driven (ED) model to improve the simulation efficiency of a mixed-signal charge-pump phase locked loop (CP-PLL) design for a frequency-modulated continuous-wave (FMCW) chirp generation. The improvement mainly comes into three parts. First, we update the data only when it changes during the previous trigger. Second, we save the data at the triggering moment of the
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Numerical analysis on mechanical and fatigue behaviors of aviation electrical connector considering structural effect Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-31 Shiyuan Luo, Binbin Wang, Jun Jiang, Jia Li, Guangming Zou, Liangcai Zeng
This work is motivated by the fact that the reliability of electrical connectors influenced by their mechanical behavior and fatigue life directly affects the working performance of the whole equipment system. In this paper, theoretical analyses of insertion force, maximum stress, and fatigue life in an aviation electrical connector are presented and the corresponding mathematical models are firstly
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Studying a time-fractional moving boundary diffusion model of solvent through a glassy polymer: A computational approach Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-31 Morteza Garshasbi, Forough Sanaei
In this article, a time-fractional nonlinear moving boundary problem is considered to express the mathematical model of diffusion of a solvent into a glassy polymeric device. A numerical method, including an iterative process based on a non-standard implicit finite difference method with variable time-step is developed to solve this problem. The purpose of solving this problem is to study and predict
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Fractional-calculus analysis of the dynamics of typhoid fever with the effect of vaccination and carriers Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-31 Rashid Jan, Salah Boulaaras, Mohammad Alnegga, Farah Aini Abdullah
Typhoid fever poses a severe hazard to public health and affects at least 27 million people annually around the globe. It is significant to conceptualize the key factors of the transmission phenomena of this bacterial infection. We formulate a novel epidemic model for typhoid fever with vaccination and carriers via Caputo-Fabrizio operator. The fundamental results of the model are inspected analytically
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Heterostructure performance evaluation: A numerical simulation and analytical modeling of the ferroelectric pocket doped double gate tunnel FET Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-28 J. E. Jeyanthi, T. S. Arun Samuel, Young Suh Song, M. Venkatesh
This paper presents a novel 2D analytical model for investigating the influence of the ferroelectric dielectric on the performance of pocket doped double gate tunnel FET. It takes into account the effect of the gate and drain voltages, the thickness of the gate insulator, the capacitance of the gate insulator, and source and drain depletions. The surface potential thus carefully obtained is utilized
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Design and performance analysis of 8-port multi-service quad-band MIMO antenna for automotive communication Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-19 Sriram Arumugam, Sangeetha Manoharan
In this paper, a low profile compact 8-port multiband antenna with polarization diversity principle for automotive communication is proposed. The geometric of the proposed MIMO antenna is integrated with multiple stubs on substrate having a size of 0.94λg × 0.94λg. The proposed design resonates at multiple frequencies of 1.8, 2.4, 5.2, and 5.8 GHz, respectively for GSM, ISM bands and WLAN wireless
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Exponential stability and numerical analysis of Timoshenko system with dual-phase-lag thermoelasticity Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-17 Hamed Abderrahmane Bouraoui, Abdelhak Djebabla, Mohamed Lamine Sahari, Salah Boulaaras
This study aims to investigate the well-posedness and stability of a thermoelastic Timoshenko system with non-Fourier heat conduction. Specifically, we analyze the system using the dual-phase-lag (DPL) model, which incorporates two thermal relaxation times, τq$$ {\tau}_q $$ and τθ$$ {\tau}_{\theta } $$, to model non-instantaneous heat propagation. Applying the semigroup approach, we demonstrate the
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Bandwidth enhancement of compact and wideband square microstrip patch antenna for WLAN/WiMAX applications in C-band Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-10-08 Ramesh Kumar Verma
This paper presents a compact and wideband square microstrip patch antenna using low cost and easy available FR-4 substrate of ground size 30 mm × 30 mm (0.51 × 0.51 λ 0 2 at lowest resonant frequency 5.07 GHz). The radiating patch of antenna is designed by embedding three T-shape notches of same dimension formed by two rectangular notches of size 6 mm × 5 mm and 3 mm × 2 mm. The radiating patch is
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Device and circuit level performance assessments of gate engineered Ge/GaAs heterojunction doping less TFET Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-09-29 Arnab Som, Sanjay Kumar Jana
Recently, the doping-less tunnel FET has gained popularity due to its lower process complexity than conventional TFETs with heavily doped source and drain regions. In this literature, we have introduced a symmetric gate Ge/GaAs heterojunction doping-less TFET(SG HJ DL TFET) using 4.6 eV work function for both the top gate and bottom gate and an asymmetric gate Ge/GaAs heterojunction doping-less TFET
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Comparative analysis of nonlinear behavioral models for GaN HEMTs based on machine learning techniques Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 1.6) Pub Date : 2023-09-29 Bo Liu, Jialin Cai
A variety of novel behavioral modeling techniques have been reported to accurately capture the nonlinear characteristics of GaN devices. For the purpose of describing GaN HEMT large-signal behavior, machine learning-based approaches have been proposed. There is, however, a lack of comparison and analysis of their performance with different machine learning techniques in these studies. An examination