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Influence of gate dielectric property on the capacitance dispersion in organic-metal-insulator-semiconductor capacitors J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Fiheon Imroze, Mithun Chennamkulam Ajith, Prashanth Kumar Manda, Karunakaran Logesh, Soumya Dutta
The capacitance dispersion with frequency in an organic-metal–insulator-semiconductor capacitor (OMISCAP) is a vital phenomenon for predicting high-frequency applications. In this paper, the influence of the dielectric constant on the capacitance dispersion of OMISCAP is investigated by varying the dielectric constant of poly-4-vinyl-phenol using cross-linker concentration. The cut-off frequency of
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Characteristics of shock wave in 355 nm laser-induced damage growth in fused silica J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Hufeng Liu, Xinxiang Miao, Biyi Wang, Chenzhuo Wang, Meng Wu, Tao Lü, Yong Jiang
During the 355 nm laser-induced damage growth in fused silica, the distance of shock wave propagation decreases as the irradiation number increases. The dynamic image of the damage reveals that the growth of the damage cavity region is one of the primary reasons for the variation in shock wave propagation distance and structure. The growth coefficient and the depth-to-diameter ratio of the cavity are
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Inverse design of polymorphic reconfigurable metamaterial absorbers based on a dual-input neural network J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Shuqin Wang, Qiongxiong Ma, Yue Chen, Wen Ding, Jianping Guo
In recent years, deep learning-based design methods for metamaterial absorbers have attracted much attention; however, the problem of structural homogeneity in inverse design constrains their further development. This paper, proposes a metamaterial absorber composed of the phase change material Ge2Sb2Se4Te1 and titanium. To give the metamaterial absorber a richer structure, we divide its Ge2Sb2Se4Te1
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Dual-band infrared metamaterial perfect absorber for narrow-band thermal emitters J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Bui Xuan Khuyen, Nguyen Van Ngoc, Dinh Ngoc Dung, Nguyen Phon Hai, Nguyen Thanh Tung, Bui Son Tung, Vu Dinh Lam, Ho Truong Giang, Pham Duy Tan, Liangyao Chen, Haiyu Zheng, YoungPak Lee
Our study introduces a metamaterial with a straightforward disk-like configuration that exhibits two prominent absorption peaks at wavelengths of 3960 and 4197 nm, with absorption of 96.3% and 94.1%, respectively. The design not only proved to be convenient for the practical fabrication, but also revealed a resilience to the changes in structural parameters. Moreover, this offers versatility across
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Spectral diagnosis of underwater microsecond high-current pulsed discharge plasma J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Huang Shijie, Liu Yi, Li Liuxia, Lin Fuchang, Zeng Chenqian, Yang Ning, Wang Tianyu, Liao Hongbin
Underwater microsecond high-current pulsed discharge can generate powerful shock waves and a significant number of active ions, offering a wide range of applications. To analyse the characteristics of plasma channel formed by the discharge, this study established a comprehensive test platform and conducted spectral diagnosis for underwater high-current pulsed discharge. Considering the randomness of
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Unraveling the influence of nitration on pore formation time in electroporation of cell membranes: a molecular dynamics simulation approach J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-17 Mukhammadali Niyozaliev, Jakhongir Matyakubov, Davronjon Abduvokhidov, Pankaj Attri, Zhitong Chen, Jamoliddin Razzokov
Electroporation, the transient permeabilization of cell membranes induced by electric fields, is an essential technique in biomedicine, facilitating gene delivery, drug transport, and cancer therapy. Despite its wide application, the influence of nitration, a biological modification involving the addition of nitro groups to phospholipids, on electroporation dynamics remains understudied. Here, we employ
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The mechanism of EP/SiC coating modulated DC flashover characteristics of epoxy composites in SF6/N2 mixtures J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-16 Zhen Li, He Gao, Zirui Mao, Bo Zhu, Lei Sun, Xuefei Bi, Yuanwei Zhu, Yongsen Han, Daomin Min, Ji Liu, Shengtao Li
Surface flashover is an inevitable insulation issue for basin-type insulators in gas-insulated switchgears/lines, which significantly challenges the reliability of the electrical power systems. Previous studies have indicated that polymer/semiconductor-filler composite coatings effectively improve the insulation properties; however, the influence mechanism of the coating materials on flashover has
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Design of illusion device in the electro-quasi-static field J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-15 Ning Liu, Zhong Lei Mei
Illusion devices have important applications in military fields because they can change the scattering pattern of objects. In this paper, the illusion conditions in the electro-quasi-static (EQS) field when transient excitation is applied are first deduced. According to the conditions derived, the illusion in the EQS field can be realized. Three representative cases are considered, one for the invisibility
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Performance enhancement of 2D tin-halide perovskite transistors via molecule-assisted grain boundary passivation and hole doping J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-15 Zhikai Le, Ao Liu, Huihui Zhu
Tin (Sn2+)-based halide perovskites have garnered considerable interest for potential applications in field-effect transistors, owing to their low-cost solution processing capability and favorable hole transport properties. However, the polycrystalline nature of halide perovskite films necessitates efficient grain boundary passivation for reliable and stable device operation. Additionally, as a p-type
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Influence of Be vacancy on 2D BeN4 single-layer for enhanced H2S sensing: prediction from first-principles simulations J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-15 Seetha Lakshmy, Antara Banerjee, Gopal Sanyal, Nandakumar Kalarikkal, Brahmananda Chakraborty
A notable surge in research interest directed towards the exploration and development of two-dimensional materials, specifically in the realm of advancing nano-devices, with a special focus on applications in gas detection, has been observed. Among these materials, the spotlight has fallen on a newly synthesized single-layered Dirac Semimetal, known as BeN4, which holds great promise as a potential
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Terahertz narrow-band filter based on 3D-printed periodic waveguides J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-12 Xiang-Yu Wang, Huan Liu, Jing Ma, Jie Li, Wen Chen, Ya-Yun Zhang, Ya-Xian Fan, Zhi-Yong Tao
Terahertz (THz) devices, especially waveguide-type functional devices related to transmission and control, are severely scarce due to the lack of effective design and fabrication methods. Here, we experimentally demonstrate a waveguide type of THz narrow-band filter based on 3D-printed technology, which is realized by a cylindrical hollow metal structure with corrugated tube walls. The semi-cylindrical
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Experimental study of DC Kerr effect of chalcogenide glass film by free space coupling method J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-12 Yinghao Cao, Jianxing Zhao, Jianhong Zhou, Yinglin Song
Chalcogenide glass is an important nonlinear optical material that has attracted much attention in the areas of integrated photonics, supercontinuum sources, and all-optical switches in recent years. However, the current research mainly focuses on the nonlinear effect excited by light, and the research on its properties under the action of a DC field is still deficient. Here, a metal-cladding optical
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High-rate etching of silicon oxide and nitride using narrow-gap high-pressure (3.3 kPa) hydrogen plasma J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-12 Toshimitsu Nomura, Hiroaki Kakiuchi, Hiromasa Ohmi
We investigated the etching behavior of silicon oxide (SiO x ) and silicon nitride (SiN x ) in narrow-gap, high-pressure (3.3 kPa) hydrogen (H2) plasma under various etching conditions. Maximum etching rates of 940 and 240 nm min−1 for SiO x and SiN x , respectively, were obtained by optimizing the H2 gas flow rate. The dependence of the etching rate on gas flow rate implied that effective elimination
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Linewidth characterization of a self-traceable grating by SEM J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-12 P Guo, H Miao, S F Mao, Y B Zou, X Deng, X B Cheng, Z J Ding
To achieve high-precision nanometrology, a self-traceable grating reference material has been reported and prepared using atom lithography and soft x-ray interference techniques (Liu et al 2021 Nanotechnology 32 175 301). In this work, we employ a Monte Carlo simulation method to investigate the scanning electron microscopy (SEM) image contrast and linewidth characterization of the grating linewidth
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Generation of meter-scale nanosecond pulsed DBD and the intelligent evaluation based on multi-dimensional feature parameter extraction J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-11 Xi Zhu, Xiuhan Guan, Zhaorui Luo, Liyan Wang, Luyi Dai, Zexuan Wu, Jiajie Fan, Xinglei Cui, Shakeel Akram, Zhi Fang
This study introduces a novel meter-scale dielectric barrier discharge (m-DBD) reactor designed to generate large-scale, low-temperature nanosecond pulsed discharge plasma. By employing a modularized gas path, this reactor enables a comprehensive analysis of discharge patterns and uniformity using multi-dimensional discharge parameters. Simulation results reveal optimal gas distribution with ten gas
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Atmospheric pressure uniform dielectric barrier discharge (DBD) in a wide air gap initiated from a narrow starting point J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-11 J Liu, Y Yang, L Nie, D Liu, X Lu
Generating a uniform non-equilibrium plasma in atmospheric pressure air has always been a challenge. It is believed that the maximum spacing for generating a uniform non-equilibrium plasma in atmospheric pressure air, whether using AC or nanosecond pulse drive, is 4 mm. Discharges are always non-uniform when the spacing is greater than 4 mm. In this paper, we propose a new type of dielectric barrier
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Parametric characterization of arcs in semi-sealed splitter plate DC circuit breakers J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-11 Jingyi Lin, Jianwen Wu, Ziang Tong, Shangwen Xia, Ruang Chen
Precisely assessing plasma parameters holds paramount importance in investigating the arc extinguishing mechanism of semi-sealed splitter plate DC circuit breakers, refining the configuration of splitter plates, and optimizing the overall structural design of circuit breakers. Based on the principle of the Langmuir probe, a double probe diagnostic method is proposed to investigate the air arc plasma
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Atomistic origins of compound semiconductor synthesis with computational neuromorphic engineering J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-09 Aykut Turfanda, Hikmet Hakan Gürel, Hilmi Ünlü
We propose the usage of multi-element bulk materials to mimic neural dynamics instead of atomically thin materials via the modeling of group II–IV compound semiconductor growth using vacancy defects and dopants by creating and annihilating one another like a complex artificial neural network, where each atom itself is the device in analogy to crossbar memory arrays, where each node is a device. We
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Exploring ion mobility mechanisms in poly indolequinone polymers: a case study on black soldier fly melanin J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-05 M Ambrico, A B Mostert, P F Ambrico, J Phua, S Mattiello, R Gunnella
Black soldier fly (BSF) melanin is a new supply of the brown-black pigment eumelanin. Given that eumelanin is a model bioelectronic material for applications such as medical devices and sensors, understanding BSF melanin’s electrical properties is important to confirm its viability as an advanced material. Presented here is a systematic, hydration dependent alternating current study of BSF melanin
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Characteristics of the O(1S) to O(1D) 557.7 nm green emission observed in an argon plasma jet J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-04 Shuai Zhao, Yanfei Wang, Ximing Zhu, Ana Sobota
An extensive study on the green auroral emission characterization is presented based on a single dielectric barrier discharge geometry argon plasma jet driven by a kHz sine voltage. The plasma was generated by using 99.999% pure argon and the observed 557.7 nm green line resulted from the excited O(1S) state. An optical emission spectroscopy method using line ratios of argon was used to obtain the
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Chiral spin textures creation and dynamics in a rectangular nanostructure J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-04 Sateesh Kandukuri, Felipe Garcia-Sanchez, P K Thiruvikraman, V Satya Narayana Murthy
Controlled creation of stable chiral spin textures is required to use them as an energy-efficient information carrier in spintronics. Here we have studied the stable creation of isolated chiral spin texture (skyrmion and antiskyrmion) and its pair through the magnetization reversal of a rectangular nanostructure using spin-polarized currents. An isolated spin texture is created through a negative current
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Investigation of the properties of photonic crystal resonant cavities based on valley spin reversal J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-04 Run Zhang, Zhi Li, Lei Xu, Xingli Zhong, Zhongxi Lin, Weibin Qiu, Hui Su
Resonators have been treated as essential elements in optics because of their capacity to store and enhance light and exhibit a wide range of applications such as semiconductor lasers and optical communication components. In this article, we reveal a new mechanism of light field confinement in an optical cavity composed of different valley photonic crystals. The electromagnetic field of light is localized
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Treatment of seeds by cold ambient air plasma: combining impedance measurements with water sorption modeling to understand the impact of seed hydration J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-04 Jonas August, Christophe Bailly, Thierry Dufour
In this article, we focus on the plasma seed interaction and more specifically-on the feedback exerted by the seeds on the plasma properties. Dormant Arabidopsis seeds with different water contents (WC), namely 3%DW, 10%DW and 30%DW were exposed to cold ambient air plasma (C2AP) generated in a dielectric barrier device (DBD). It is found that increasing WC enhances the capacitive current of the DBD
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Profiles of oxygen and titanium point defects in ferromagnetic TiO2 films J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Tran Quynh Nhu, Martin Friák, Ivana Miháliková, Michal Kiaba, Nguyen Hoa Hong
Experimentally it is shown that without any oxygen manipulation for TiO2, a strong room temperature ferromagnetism could be expected only in ultra-thin films, with the ideal thickness below 100 nm. Both bulks and nano-powders of TiO2 are diamagnetic, indicating that the surface and its nano-sublayers play very important roles in tailoring the magnetic properties in this type of compound. To shed a
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Plasmonic gas sensors based on nanomaterials: mechanisms and recent developments J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Antara Vaidyanathan, Brinti Mondal, Chandra Sekhar Rout, Brahmananda Chakraborty
Sensing devices for rapid analytics are important societal requirements, with wide applications in environmental diagnostics, food testing, and disease screening. Nanomaterials present excellent opportunities in sensing applications owing to their superior structural strength, and their electronic, magnetic, and optoelectronic properties. Among the various mechanisms of gas sensing, including chemiresistive
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Secondary roughness effect of surface microstructures on secondary electron emission and multipactor threshold for PTFE-filled and PI-filled single ridge waveguides J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Xiangchen Meng, Yanan Xu, Zhuoxi Lian, Jiyuan Wang, Dan Wang, Kangcheng Qi
Secondary electron yield (SEY) is a dominant factor in determining the multipactor threshold. In this study, we analyzed the secondary roughness effect of surface microstructures for plastic dielectric on SEY reduction and multipactor mitigation. A single ridge waveguide (SRW) operating in Ku-band, filled with polytetrafluoroethylene (PTFE) or polyimide (PI), was designed with a dielectric–metal multipactor
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Non-thermal plasma for decontamination of bacteria trapped in particulate matter filters: plasma source characteristics and antibacterial potential J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Andreas Helmke, Ingrid Curril, Julia Mrotzek, Jannik Schulz, Wolfgang Viöl
The aims of this study encompass the characterization of process parameters and the antimicrobial potential during operation of a novel non-thermal plasma (NTP) source in a duct system containing a particulate matter (PM) filter thus mimicking the interior of an air purifier. Simulating conditions of a long-term operation scenario, in which bacterial aerosols in indoor environments accumulate on PM
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A unified photo-excited GaAs model from ab initio simulation in terahertz regime J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Ning Qian Huang, Yan Shi, Zan Kui Meng, Zhen Guo Ban
In this paper, we present a unified model for gallium arsenide (GaAs) based on ab initio simulations which characterizes its terahertz (THz) properties when excited by optical pump. We use density functional perturbation theory to calculate the dielectric properties of GaAs, and investigate the relaxation time of photo-excited GaAs through electron–phonon interactions. In light of the complexities
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Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-03 Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Qingyuan Chang, Xuerui Niu, Chunzhou Shi, Jiale Du, Mei Wu, Hao Lu, Xiaohua Ma, Yue Hao
To improve the threshold voltage and gate reliability of conventional enhancement-mode p-GaN-gated AlGaN/GaN high electron mobility transistors while maintaining a low on-resistance, an improved design solution for p-GaN HEMTs with P-I-N junction gate (PIN-HEMTs) has been proposed. Simulation results show that energy band modulation is achieved by adjusting the doping concentration and thickness of
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Analysis of mechanisms of bubble characteristics and molten pool dynamics in EDM based on a three-phase flow model J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Weiye Peng, Jiajing Tang, Zhengkai Li, Zhiwei Qiu, Mulong Yin
Bubble characteristics and bubble volume fraction have significant effects on crater morphology and machining efficiency during electrical discharge machining (EDM) in liquid. Therefore, there is a need to elucidate the mechanism of bubble characteristics in EDM and analyze the mechanism of crater formation based on these bubble characteristics. However, since EDM is a transient multiphysics process
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Customizing superior surface insulation properties of polymeric dielectric via in-plane molecular chain orientation J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Jiakai Zeng, Zhiyuan Li, Yihan Zhou, Liuqing Yang, Wenfeng Liu, Xiaohong Chi, Lu Cheng, Shengtao Li
Surface flashover is a common breakdown phenomenon on material surfaces for which surface charge migration property, determined by surface composition and molecular chain structure, is crucial. Precise modulation of charge migration property by simple and efficient methods to improve surface flashover voltage is the goal in industry. Here, in-plane molecular chain orientation (MCO) modulation by uniaxial
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Engineering Mn3Ga/GaAs interfaces: a first-principles study on energetic stability and magnetic anisotropy J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Xiaoche Wang, Kesong Yang
Mn3Ga-based ferrimagnets have emerged as a promising platform for energy-efficient spintronics. However, the challenge of identifying an appropriate substrate with minimal lattice misfit for the growth of high-quality Mn3Ga films while achieving the desired interfacial magnetic properties persists. Here we investigate the interfacial energetic stability and magnetic anisotropy at the Mn3Ga/GaAs interface
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Source–drain switching characteristics when coupled with a gate-controlled DBD in a microplasma switch J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Lichi Chen, Yaogong Wang, Xueying Li, Xiaoqin Ma, Wenjiang Wang, Xiaoning Zhang
Microplasma switches have attracted considerable attention in harsh environment applications, such as satellites, space exploration, nuclear reactors, and oil drilling, because of their inherent characteristics. A microplasma switch is generally constructed from a source, drain, and gate electrodes, and current conduction is generated between the drain and source (DS), and modulated by the gate. In
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Excitation of exchange spin waves in a magnetic insulator thin film at cryogenic temperatures J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Jilei Chen, Hanchen Wang, Jinlong Wang, Lutong Sheng, Tao Liu, Song Liu, Dapeng Yu, Haiming Yu
Spin waves and their quanta, magnons, are promising candidates for next-generation electronic devices, due to their low-power consumption and compatibility with radio-frequency-based electronic devices. For achieving magnon-based hybrid quantum systems for quantum memory and computation, the investigation of spin-wave propagation at cryogenic temperatures is highly required. In this article, we report
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Controlling of spontaneous emission of quantum dots based on hyperbolic metamaterials J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Yu Mao, Hao Zhang, Jing Xiong, Xiangpeng Liu, Qiaoqiao Wang, Junqiao Wang
The study of spontaneous emission has basic and supporting significance for enhancing the interaction between light and matter, solid-state lighting and biosensors. Hyperbolic metamaterials (HMMs) can support high k modes due to their hyperbolic dispersion characteristics, resulting in extremely high photon density, which affects spontaneous emission. Therefore, here we study the effect of HMMs on
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Recent advances in in-sensor computational vision sensors: from mechanisms to applications J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-04-02 Hang Xu, Leixin Meng, Yiyu Guo, Wenhao Tang, Liangliang Huang, Tiantian Dai, Xu Liu, Qing Yang
The number of vision sensors continues to increase with the rapid development of intelligent systems. The effective transmitting and processing of the sensing data become difficult due to the sensing, computing and memory units being physically separated. In-sensor computing architecture inspired by biological visual systems with efficient information processing has attracted increasing attention for
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Hybrid density functional theory simulation of sodium impurity and impurity–vacancy defect complexes in germanium: perspectives of defect engineering for activation of shallow donors J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 T L Petrenko, V P Bryksa, I V Dyka
At present, germanium (Ge) as a high-mobility material is considered as a possible replacement for Si in microelectronics. The main obstacle in the method is the large vacancy concentration obtained after the implantation of shallow donors. This prevents the formation of n+ regions and has a negative impact on device performance. One way to eliminate the detrimental effects of such defects is through
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Bandgap engineering of spinel-structured oxide semiconductor alloys J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 Yuichi Ota, Kentaro Kaneko, Takeyoshi Onuma, Shizuo Fujita
We investigated bandgap engineering of spinel-structured MgB 2O4 (B = Al, Ga, In) alloys. The trend of bandgap change was tunable from approximated 7.8–3.6 eV by substituting group III cation atoms in MgB 2O4. To evaluate the doping possibility, we have calculated the natural band alignment and doping pinning energy of the normal and inverse spinel structures of MgB 2O4 alloys. The calculated doping
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Comprehensive material study of Ge grown by aspect ratio trapping on Si substrate J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 Hryhorii Stanchu, Serhii Kryvyi, Stephen Margiotta, Matthew Cook, Joshua Grant, Huong Tran, Sudip Acharya, Fernando M de Oliveira, Yuriy I Mazur, Mourad Benamara, Clifford A King, Wei Du, Baohua Li, Gregory Salamo, Shui-Qing Yu
High-quality monolithic Ge-on-Si is sought for CMOS-compatible optoelectronic devices. We examine the structural characteristics of Ge-on-Si grown by the aspect ratio trapping (ART) method on a SiO2/Si(001) template in pre-patterned holes. Transmission electron microscopy and surface topography analysis revealed high-quality Ge islands overgrown from the ART holes in SiO2. The superior crystal quality
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Lateral semiconductor magnonics: an array of GaAs stripes atop the YIG layer J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 A A Martyshkin, K Bublikov, E N Beginin, A V Sadovnikov
In this work, we demonstrate the numerical and experimental research of the spin-wave transport in a structure composed of a gallium arsenide (GaAs) stripe lattice interfaced to an yttrium iron garnet layer. We show that this structure can be considered as an array of an infinite number of laterally coupled ferrite-semiconductor waveguides. We show that the surface wave properties for colinear propagation
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Plasma characteristics and de-icing of three-electrode double-sided pulsed surface dielectric barrier discharge J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 Fangyuan Wang, Bangfa Peng, Nan Jiang, Jie Li
Ice accumulation on aircraft can lead to aerodynamic performance degradation and even trigger security incidents. However, traditional surface dielectric barrier discharge (SDBD) reactors cannot work while covered by glaze ice. In the present work, a novel three-electrode double-sided SDBD is proposed and employed for glaze ice deicing. Compared with traditional SDBD reactor, three-electrode double-sided
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Effects of DC bias on evolutions of repetitively pulsed streamer discharge in humid air J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 Zheng Zhao, Qiuyu Gao, Haowei Zhang, Haotian Zheng, Xinlei Zheng, Zihan Sun, Anbang Sun, Jiangtao Li
Modulation efficiency and mechanisms of repetitively pulsed streamer discharge in humid air are ambiguous with dramatic variations in free electron availability, residual ion mobility, enhanced heat release, etc, caused by water molecules intentionally supplemented or existing in the surrounding environment. The inception and propagation patterns of repetitively pulsed streamer discharge modulated
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Coherent energy transfers between orthogonal modes of a dielectric cavity bridged by a plasmonic antenna J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-28 Bo Xie, Lin Ma, Yue You, Xiao-Jing Du, Ma-Long Hu, Xu-Tao Tang, Jun He, Zhong-Jian Yang
Here, we demonstrate a strategy that two orthogonal modes in a dielectric cavity can efficiently couple with each other through the bridging effect of a plasmonic antenna. In such a dielectric-antenna hybrid system, a plasmonic antenna can coherently interact with both modes of the dielectric cavity, which brings sufficient coherent energy transfers between the two orthogonal modes. Specifically, a
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Magnetization reversal of ferromagnetic nanosample by circularly polarized radiation pulse under resonance condition J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 Andrew V Lobachev, Mikhail Ye Zhuravlev, Anatoly V Vedyayev
We consider the problem of the magnetization dynamics of a nanosized ferromagnetic sample caused by the spin–orbit interaction of electrons arising in the field of an incident electromagnetic wave. We discuss the case when the frequency of the incident electromagnetic radiation is close to the frequency of the interband transitions. We show that with the use of high-power lasers, this mechanism causes
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Effects of Mn doping on the conduction mechanism and dielectric nonlinearity of Na0.5Bi0.5TiO3 thin film J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 Zhongshuai Liang, Cheng-Ao Shen, Jiawei Wang, Xin Liu, Tianyi Hu, Chao Li, Lilong Xiong, Xianfeng Du
In this work, the conduction mechanism and dielectric nonlinearity of undoped and Mn-doped Na0.5Bi0.5TiO3 (NBT) films were investigated. The potential conduction mechanism in relatively low electric fields should be dominated by hopping conduction rather than typical Ohmic conduction. In the high electric field region, the conduction mechanism is dominated by Poole–Frenkel emission and Schottky emission
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Simultaneous improvement of high-frequency and Baliga figures of merit of 1.7 kV 4H-SiC MOSFET with retrograded JFET doping J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 Qian Wang, Hao Hua, Li Zheng, Junhong Feng, Cheng Zhang, Mingyang Gao, Kun Qiu, Jian Luo, Xinhong Cheng
The 1.7 kV 4H-SiC MOSFET which features optimized retrograded-profile ion implantation in the JFET regions (RG-MOS) is proposed and fabricated on the 4 inch wafers. The measured results quantify the benefits of the RG-MOS structure: simultaneous improvement in high-frequency figures of merit (HF-FOM) (R on× C GD) by 1.5×, HF-FOM (R on × Q GD) by 1.5× and Baliga figure of merit (BFOM = 4BV2/R on,sp)
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Photonic curing for innovative fabrication of flexible metal oxide optoelectronics J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 Julia W P Hsu, Robert T Piper
Flexible optoelectronics, based on non-planar substrates, hold promise for diverse applications such as wearables, health monitors, and displays due to their cost-effective manufacturing methods. Despite the superior properties of metal oxides, the challenge of processing them at high temperatures incompatible with plastic substrates necessitates innovative annealing approaches. Photonic curing, which
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Investigation on the mechanism and a universal structural design method for resistive switching devices J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 Bowen Yang, Guokun Ma, Xinyu Wan, Yiheng Rao, Li Tao, Jinxia Duan, Lin Lv, Jun Zhang, Liangping Shen, Hanbin Wang, Hao Wang
Resistive random-access memories have attracted significant attention in memory applications, while the physical mechanism behind their resistive switching behavior is still unclear. As a key issue, the migration of oxygen vacancies (VO) directly influences the performance of devices in the formation and rupture of conductive filaments (CFs). In this work, the distance of VO migration is performed
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Pulsed voltage cold atmospheric plasma jet and gold nanoparticles enhance cytotoxic anticancer effect J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-27 I Schweigert, M Biryukov, A Polyakova, N Krychkova, E Gorbunova, A Epanchintseva, I Pyshnaya, Dm Zakrevsky, E Milakhina, O Koval
Efficient and biologically safe mode of cold atmospheric plasma jet (CAPJ) is crucial for the development of CAPJ-based anticancer therapy. In the experiment and numerical simulations, by changing the pulse duration of a positive-pulsed (PP) voltage, we found the optimal CAPJ modes with a regular streamer propagation and a maximum discharge current at a temperature T< 42 ∘C. These CAPJs substantially
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Coherent perfect absorption of light by undoped graphene monolayer J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 M Shoufie Ukhtary
We show theoretically that coherent perfect absorption (CPA) of light is possible by a graphene monolayer without doping. To achieve the CPA, undoped graphene is embedded inside a multilayer structure called mirror structure, which increases the effective impedance of the surrounding medium. The increased effective impedance allows the destructive interference of light outside the structure that induces
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Improving the specific impulse of Hall thrusters using a wide channel design J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Xingyu Liu, Hong Li, Zhongyu Jiang, Yongjie Ding, Liqiu Wei, Daren Yu, Wei Mao
This paper proposes increasing the width of the discharge channel to improve the specific impulse of Hall thrusters. In our study, we significantly increased the achievable channel width by optimizing the magnetic circuit topology, and the design freedom of the Hall thruster was improved. A prototype of a wide-channel high-specific-impulse Hall thruster was designed and experimentally verified. The
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Ferroelectric tunnel junctions: promise, achievements and challenges J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Sung Hyuk Park, Hyeon Ji Lee, Min Hyuk Park, Jihyun Kim, Ho Won Jang
Ferroelectric tunnel junctions (FTJs) have been the subject of ongoing research interest due to its fast operation based on the spontaneous polarization direction of ultrathin ferroelectrics and its simple two-terminal structure. Due to the advantages of FTJs, such as non-destructive readout, fast operation speed, low energy consumption, and high-density integration, they have recently been considered
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Recent advance and design strategies of chalcogenides for high-performance aqueous zinc-ion batteries J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Lujing Wang, Shuyue Li, Chunzhong Wang, Shiyu Yao, Gang Chen, Fei Du
Aqueous zinc-ion batteries (AZIBs) have emerged as competitive alternatives for energy storage systems. By comparison with traditional cathode materials, the unique combination advantages of improved specific capacity, high electrical conductivity and tunable structures exhibited by chalcogenides contribute to receiving increasing attention. However, it should be noted that chalcogenides still show
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The modulation of perpendicular magnetic anisotropy and spin–orbit toque in Pt/Co/Pt multilayers with interfacial decoration by insertion of a Bi layer J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Yong Wu, Kaibin Wen, Tanzhao Zhang, Ye Liu, Kangkang Meng, Xiaoguang Xu, Yong Jiang
Bismuth is a well-known semimetal material with strong spin–orbit coupling and has been confirmed to exhibit a larger spin Hall angle in CuBi and PtBi alloys with low Bi-doping concentration. In this study, we investigated perpendicular magnetic anisotropy (PMA) and spin–orbit torques (SOTs) in Pt/Co/Pt multilayers by inserting a Bi layer with a thickness of 2 nm at the Co/Pt interface. Two types of
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Reconfigurable high-order exceptional points in coupled optical parametric oscillators for enhanced sensing J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Zehui Guo, Zhihao Xie, Zhenhua Li, Tao Li
Non-Hermitian systems around exceptional points (EPs) demonstrate increased sensitivity as the EP order increases. We propose a protocol for constructing a reconfigurable non-Hermitian system consisting of three coupled optical parametric oscillators (OPOs) and demonstrate its enhanced sensitivity around EPs. The coupled OPO system exhibits reconfigurable high-order EPs and corresponding-order enhanced
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Active manipulation of the plasmonic induced asymmetric photonic spin Hall effect J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Ting Jiang, Yetao Shu, Yifei Song, Yong Zhang, Zhaoxin Wen, Zhaoming Luo
The asymmetric photonic spin Hall effect (APSHE) induced by surface plasmon polaritons in a graphene-based structure is actively manipulated by external magnetic field and electric field. It is revealed that the spin-dependent splitting exhibits spatio-temporal asymmetric property due to the involvement of the anisotropic graphene. The peak of asymmetry degree in APSHE at the position of reflectance
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Benchmark calculations for anisotropic scattering in kinetic models for low temperature plasma J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 M Flynn, L Vialetto, A Fierro, A Neuber, J Stephens
Benchmark calculations are reported for anisotropic scattering in Boltzmann equation solvers and Monte Carlo collisional models of electron swarms in gases. The work focuses on isotropic, forward, and screened Coulomb models for angular scattering in electron-neutral collisions. The impact of scattering on electron swarm parameters is demonstrated in both conservative and non-conservative model atoms
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Streamer propagation characteristics of nanosecond pulsed discharge plasma on fluidized particles surface: experimental investigation and numerical simulation J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-26 Ju Li, Nan Jiang, Xiaolong Wang, Guanglin Yu, Bangfa Peng, Junwen He, Jie Li
Plasma fluidized-bed contributes to strengthening the interaction between active species in plasma and fluidized powder particles, resulting in higher active species utilization efficiency and superior powders processing/modification performance. However, the plasma streamer dynamics on the fluidized powder particles are still unclear due to the intricacy of plasma fluidized-bed. In this work, the
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High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-25 Makhayeni Mtunzi, Hui Jia, Yaonan Hou, Xueying Yu, Haotian Zeng, Junjie Yang, Xingzhao Yan, Ilias Skandalos, Huiwen Deng, Jae-Seong Park, Wei Li, Ang Li, Khalil El Hajraoui, Quentin Ramasse, Frederic Gardes, Mingchu Tang, Siming Chen, Alwyn Seeds, Huiyun Liu
High-quality and low-defect-density germanium (Ge) buffer layers on silicon (Si) substrates have long been developed for group IV and III–V devices by suppressing defect propagation during epitaxial growth. This is a crucial step for the development of highly efficient photonic devices on Si substrates. Patterned silicon substrates have increasingly been employed for their ability to restrict and hinder
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Influence of structural characteristics of a Si nanoparticulate anode on all-solid-state Li-ion batteries J. Phys. D: Appl. Phys. (IF 3.4) Pub Date : 2024-03-25 Ryoshi Ohta, Takeo Hiraoka, Yuki Shibano, Hiroaki Kawamura, Koji Kawamoto, Toshimi Tanaka, Akira Takeuchi, Masashi Dougakiuchi, Kenichi Fukuda, Makoto Kambara
Si nanoparticles with independently controlled size and oxygen content have been produced by plasma spraying physical vapor deposition followed by the retarded oxidation. These nanoparticles are used as the negative electrode of all-solid-state batteries with sulfide solid electrolyte, and the influence of size and oxygen content on battery performance has been analyzed. The cells containing Si nanoparticles