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Control of Surface Chemistry in Recess Etching Towards Normally‐OFF GaN MIS‐HEMTs Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-19 Tian Luo, Zhehan Yu, Yijun Dai, Sitong Chen, Fang Ye, Wei Xu, Jichun Ye, Wei Guo
Reducing off‐state and gate leakage current is crucial in the development of metal‐insulator‐semiconductor high‐electron‐mobility‐transistors (MIS‐HEMTs). This work reports interface engineering in the gate recess region through low‐damage digital etching during the fabrication of normally‐off GaN MIS‐HEMTs. Conventional plasma etching leads to a reduction of the N/(Al+Ga) ratio, but this value recovered
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The rotating excitons in two‐dimensional materials: Valley Zeeman effect and chirality Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-19 Yu Cui, Xin-Jun Ma, Jia-Pei Deng, Shao-Juan Li, Ran-Bo Yang, Zhi-Qing Li, Zi-Wu Wang
We propose the rotational dynamics of the intralayer and interlayer excitons with their inherent momenta of inertia in the monolayer and bilayer transition metal dichalcogenides, respectively, where the new chirality of exciton is endowed by the rotational angular momentum, namely, the formations of left‐ and right‐handed excitons at the +K and ‐K valleys, respectively. We find that angular momenta
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Emergence of ferroelectricity in P‐Type 2D In1.75Sb0.25Se3 Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-19 Shasha Li, Tao Guo, Yong Yan, Yimin A Wu
P‐type Two‐dimensional ferroelectric semiconductors (2D FeSs) play an increasingly essential role in the advanced nonvolatile and morphotropic beyond‐Moore electronic devices with high performance and low power consumption. But reliable p‐type 2D FeS with holes as majority carriers are still scarce. Here, we report the first experimental realization of room‐temperature ferroelectricity in van der Waals
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Second‐order topological corner states in square lattice plasmonic metasurfaces with C4 and glide symmetries Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-18 Kwang-Kwon Om, Kwang-Hyon Kim
Recently, plasmonic metasurfaces have emerged as a platform for topological photonics, exhibiting both advantages of plasmon‐induced tight confinement of local field and topological robustness. Most of previous works regarding plasmonic systems are limited to the first‐order topologies and only a few studies dealt with higher‐order topological states in honeycomb lattices. Moreover, second‐order topologies
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Synthesis of two‐dimensional nonlayered α‐Nb2O5 nanosheets by the growth promoter of sulfur and alkali halides Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-17 Bo Zhang, Chengyang Niu, Wenlong Chu, Xuehao Guo, Xilong Zhou, Cheng Li, Xiulian Fan, Luwei Zou, Zhaofeng Wu, Yunzhang Lu, Fangping OuYang, Yu Zhou, Hongyan Zhang
Niobium‐based oxides with wide bandgap and high dielectric constant show great potential in the applications of electronic and optoelectronic devices. Herein, the quasi van der Waals epitaxial growth of two‐dimensional (2D) α‐Nb2O5 nanosheets were reported, in which the growth promoter of sulfur and alkali halides have been utilized to catalyze the ultrathin 2D growth. The relatively low Gibbs free
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Wetting Properties of Black Silicon Layers Fabricated by Different Techniques Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-15 Gagik Ayvazyan, Levon Hakhoyan, Arman Vardanyan, Hele Savin, Xiaolong Liu
The wettability of black silicon (BSi) layers fabricated by reactive ion etching (RIE), metal‐assisted chemical etching (MACE), and laser‐induced etching (LIE) techniques was studied. The contact angles of wetting on the samples with deionized water and methylammonium iodide‐based perovskite solutions were determined. It has been found that the element composition and the enlargement area factor of
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Investigation of Interlayer Dielectric in BaTiO3/III‐Nitride Transistors Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-13 Hyunsoo Lee, Joe F. McGlone, Sheikh Ifatur Rahman, Christopher Chae, Chandan Joishi, Jinwoo Hwang, Siddharth Rajan
This study investigated the impact of varying the thickness of the Al2O3 interlayer dielectric on the electrical characteristics of BaTiO3/III‐Nitride transistors. The findings revealed that a minimum thickness of 8 nm for the Al2O3 layer is crucial to maintain high device performance and protect against sputtering‐induced damage during BaTiO3 deposition. The fabricated BaTiO3/Al2O3/AlGaN/GaN HEMTs
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Impact of sequential N ion implantation on extended defects and Mg distribution in Mg ion‐implanted GaN Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-12 Emi Kano, Jun Uzuhashi, Koki Kobayashi, Kosuke Ishikawa, Kyosuke Sawabe, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Tadakatsu Ohkubo, Tetsu Kachi, Nobuyuki Ikarashi
In Mg ion implantation doping of GaN, sequential N ion implantation reportedly changes Mg concentrations in the Mg ion‐implanted region and the underlying region after activation annealing. We investigated the impact of sequential N ion implantation on defects and Mg distribution after post‐implantation annealing. Our atomic‐resolution analyses showed that, in the Mg ion‐implanted region, the N ion
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Tuning the Ferromagnetic Resonance Frequency of Microstructured Permalloy Film on Flexible Substrate Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-05 Ting Lei, Wei Zhang, Guohao Bo, Chengyu Feng, Na Li, Rongzhi Zhao, Lianze Ji, Jian Zhang, Xuefeng Zhang
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Efficiency Limits in Coalesced AlGaN Nanowire Ultraviolet LEDs Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-05 Brelon J. May, Elline C. Hettiaratchy, Binbin Wang, Camelia M. Selcu, Bryan D. Esser, David W. McComb, Roberto C. Myers
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Design and Characterization of New 3D Reentrant Rhombic Auxetic Structures with Enhanced Mechanical Properties Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-05 Yingying Xue, Jianhui Mu, Xingfu Wang
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Energy-Level Alignment and Electronic Structure of Dual-State Luminogens Thin Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-04-04 Wenjie Zhou, Yingying Li, Fulin Xie, Chengyuan Wang, Jiaxiang Yang, Qi Wang, Steffen Duhm
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Position-Selective Introduction of Ferromagnetism on the Micro- and Nanoscale in a Paramagnetic Thin Palladium Film Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-29 Petter Ström, Christina Vantaraki, Rajdeep Kaur, Tuan T. Tran, Gyula Nagy, Vassilios Kapaklis, Daniel Primetzhofer
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Magic of Solvents: Effect of Processing Solvents on Hole Transport in Organic Semiconductor Small Molecules Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-28 Alexey Piryazev, Diana Sagdullina, Ilya Kuznetsov, Azaliia Akhkiamova, Mikhail Gapanovich, Denis Anokhin, Aleksandra Zhivchikova, Maxim Sideltsev, Elizaveta Siaglova, Marina Tepliakova, Dimitri Ivanov, Alexander Akkuratov
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A High Channel Mobility and a Normally-off Operation of a Vertical GaN Metal-Oxide-Semiconductor Field-Effect Transistors using an AlSiO/AlN Gate Stack Structure on m-plane Trench Sidewall Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-23 Masakazu Kanechika, Kenji Ito, Tetsuo Narita, Kazuyoshi Tomita, Shiro Iwasaki, Daigo Kikuta, Tetsu Kachi
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Metastability in Dark Current Diode Characteristics of Chalcogenide Photovoltaic Modules Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-22 Bettina Friedel
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High-Performance of Self-Powered UV–Visible CdS (PVP)/PbI2 Heterojunction Photodetector Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-22 Lei Yang, Mingkun Huang, Yue Wang, Yuanhao Kang, Le Wang, Niumiao Zhang
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High Performance Amorphous IGO Thin Film Transistors Grown at Low Temperature Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-18 Chuan Peng, Han He, Hao Huang, Yongyuan Shang, Zipeng Feng, Zhipeng Zhang, Chunlan Wang, Bingsuo Zou, Liu Xingqiang
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Electroluminescence from Silicon-Based Light-Emitting Devices with Erbium-Doped Ta2O5 Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-18 Chengtao Xia, Ziwei Wang, Shuming Jiang, Ran Ji, Linlin Lu, Deren Yang, Xiangyang Ma
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Topologically Protected Synthesizing of Fock States in a Circuit Quantum Electrodynamics Architecture Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-15 Wei Xin, Xiang-min Yu, Kun Zhou, Shaoxiong Li, Yang Yu
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True-Red InGaN Light-Emitting Diodes for Display Applications Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-15 Robert Armitage, Zhongmin Ren, Mark Holmes, Joseph Flemish
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Optical Properties of Low-Defect Large-Area Hexagonal Boron Nitride for Quantum Applications Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-14 Shrivatch Sankar, Shantanu Saha, Jia-Shiang Chen, Shih-Po Chien, Yann-Wen Lan, Xuedan Ma, Michael Snure, Shamsul Arafin
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The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-13 Ignatii Zaitsev, Agnieszka Anna Corley-Wiciak, Cedric Corley-Wiciak, Marvin Hartwig Zoellner, Carsten Richter, Edoardo Zatterin, Michele Virgilio, Beatriz Martín-García, Davide Spirito, Costanza Lucia Manganelli
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GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-10 Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low‐cost sapphire substrates is presented in comparison to GaN bulk substrates. The targeted blocking capability demands drift layers with a thickness of 10 μm and low but controllable n‐type doping. Using a growth rate of 2.5 μm h−1 the concentration of unintentionally
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Why Is the Bandgap of GaP Indirect While That of GaAs and GaN Are Direct? Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-08 Jinhai Huang, Wei Yang, Zihui Chen, Shengxin Yang, Kan-Hao Xue, Xiangshui Miao
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Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-08 Thomas Fernandes, Michael Texier, Philipp Hans, Cristian Mocuta, Solène Comby-Dassonneville, Gabriele Navarro, Simon Jeannot, Thomas W. Cornelius, Madeleine Han, Jaime Segura Ruiz, Martin Rosenthal, Yannick le Friec, Roberto Simola, Olivier Thomas
Ge‐rich Ge‐Sb‐Te alloy is a good candidate for future automotive applications due to its high crystallisation temperature, which allows good data retention at elevated temperatures. Crystallization in this material is governed by elemental segregation which is key to thermal stability and device performance. In this work elemental (Ge, Sb, Te) segregation is studied in situ during thermal annealing
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Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111) Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-07 Maya N. Nair, Irene Palacio, Yoshi Ohtsubo, Amina Taleb-Ibrahimi, Enrique G. Michel, Arantzazu Mascaraque, Antonio Tejeda
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An Ultralow Concentration of Cr2O3 Dopants-Driven Lower Temperature Sintering ZnO-Based Varistor Ceramics Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-07 Yadong Cheng, Liaoying Zheng, Huarong Zeng, Tian Tian, Xue Shi, Zhenyong Man, Xuezheng Ruan, Guorong Li, Min Zhu
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Carrier transport properties of the orthorhombic phase boron nitride nanoribbons and rectifying device design Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-06 Jun Zhao, Can Yao, Yunxi Qi, Hui Zeng
Using density functional theory combined with non‐equilibrium Green’s function, we investigate the electronic structures and carrier transport properties of the orthorhombic phase boron nitride nanoribbons (BNNRs) with different edges and different widths. The calculated results show that both armchair‐ and zigzag‐edged BNNRs are direct bandgap semiconductors. The quantum confinement gives rise to
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Deep-Ultraviolet Luminescence Properties of AlN Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-05 Ryota Ishii, Akira Yoshikawa, Mitsuru Funato, Yoichi Kawakami
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Electric, Dielectric, and Phonon Properties of Cu2OCl2 Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-04 Iliana N. Apostolova, Angel T. Apostolov, Julia M. Wesselinowa
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High-Resolution Patterning of Conductive Microstructures by Electrostatic Deposition of Aerosol Au Nanoparticles through the Dielectric Mask Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-04 Alexey Efimov, Anton Patarashvili, Dmitry Maslennikov, Vladislav Davydov, Denis Kornyushin, Mohammad Reza Ghorbani Fard, Dmitry Labutov, Vitaly Torgunakov, Margarita Zebreva, Victor Ivanov
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Deep-Red (Sr,Ba)Lu2O4: Eu2+ Phosphor for Full-Spectrum Lighting Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-02 Shaoxiong Wang, Fengluan You, Shaojun Wang, Tao Pang, Lingwei Zeng, Shisheng Lin, Yuanhui Zheng, Yongzheng Fang, Daqin Chen
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Evidence of Cationic Antiphase Disorder in Epitaxial Cu(In,Ga)S2 Grown on GaP/Si(001) Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-01 Eugène Bertin, Éric Gautron, Nicolas Barreau, Charles Cornet, Ludovic Arzel, Léo Choubrac, Antoine Létoublon, Sylvie Harel, Rozenn Bernard, Maud Jullien, Olivier Durand
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Epitaxial Tantalum-Doped β-Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-01 Haobo Lin, Ningtao Liu, Wei Wang, Xiaoli Zhang, Dongyang Han, Wenrui Zhang, Jichun Ye
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Relative Intensity Noise in a Two-Section Distributed Bragg Reflector Tapered Laser Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-29 Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf
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Advancements in Uncooled Bolometer Technology: Shortwave Infrared Detection via CuFeSe2 Nanocrystal Colloidal Thin Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-27 Ashutosh Vishwakarma, Chinmay Shailendra Gharpure, Anumol Sugathan, Anshu Pandey, Sushobhan Avasthi
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Systematic Investigation on the Surfactant-Assisted Liquid-Phase Exfoliation of MoS2 and WS2 in Water for Sustainable 2D Material Inks Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-25 Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang
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Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-23 Kentaro Saito, Shogo Hatayama, Yuta Saito
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Colloidal-Doped Semiconductor Nanocrystals Embedded in One-Dimensional Photonic Crystals for Ultrafast Photonics Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-23 Ilka Kriegel, Francesco Scotognella
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Polycrystalline GeSn Films Grown by Hot Wire Chemical Vapor Deposition on SiO2/Si(001) Substrates Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-22 Gennady Vladimirovich Shengurov, Yury Nikolaevich Buzynin, Vadim Yurievich Chalkov, Alexey Vladimirovich Nezhdanov, Alexey Vladimirovich Kudrin, Pavel Andreevich Yunin
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Enhanced Thermoelectric Performance of Cu2Se Alloys by Simultaneous Engineering of Thermal and Electrical Transport Properties through S and Te Co-Doping Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-22 Mahwish Khan, Hongchao Wang, Chunlei Wang
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Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (112¯0) Al0.56Sc0.44N Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-21 Weilun Xie, Weipeng Xuan, Danyang Fu, Yingqi Jiang, Qikun Wang, Xingli He, Liang Wu, Jinkai Chen, Shurong Dong, Hao Jin, Jikui Luo
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Transition Metal Impurities as Shallow Donors in β-Ga2O3 Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-21 Siavash Karbasizadeh, Sai Mu, Mark E. Turiansky, Chris G. Van de Walle
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Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-16 Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Rintaro Miyake, Yusuke Sasaki, Yoshinori Imoto, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
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Tuning the Bandgap and Topological Phase Transition in Bilayer Van der Waals Stanane by Electric Field Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-15 Yifei Zhao, Zhongyao Li
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Asymmetric Electronic Transport in Porphine: Role of Atomically Precise Tip Electrode Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-14 Koushik R. Das, Sudipta Dutta
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Thickness-Dependent Bandgap and Atomic Structure in Elemental Tellurium Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-14 Yuting Sun, Tamihiro Gotoh, Bowen Li, Huanglong Li, Min Zhu
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Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-12 Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul
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First Principles Calculation of Gas Sensitive Properties of Pd3-Modified Monolayer PtSe2 to SF6 Decomposition Products Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-12 Mengting Li, Weifu Cen, Zean Tian, Quan Zheng
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Improved NH3 Gas Sensing Performance of Femtosecond-Laser Textured Silicon by the Decoration of Au Nanoparticles Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-10 Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao
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Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)-Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-08 Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang
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Ferroelectric Control of Band Alignments in In2Se3/h-BN and CuInP2S6/h-BN van der Waals Heterostructures Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-07 Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun
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Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase-Change Memory Double-Patterned Self-Aligned Structure Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-06 Renzo Antonelli, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout, Mathieu Bernard, Pattamon Dezest, François Andrieu, Abdelkader Souifi, Gabriele Navarro
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Phosphides-Based Terahertz Quantum-Cascade Laser Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-31 Dmitrii V. Ushakov, Alexander A. Afonenko, Rustam A. Khabibullin, Mikhail A. Fadeev, Alexander A. Dubinov
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Skyrmion Motion in Ferrimagnets Driven by Magnetic Anisotropy Gradient Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-31 Huan Xu, Qianqian Yang, Yang Liu, Guo Tian, Lei Qiu, Minghui Qin, Zhipeng Hou
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Probing the Spatial Variation of Magnetic Order in Strained SrMnO3 Thin Films Using Spin Hall Magnetoresistance Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Job J. L. van Rijn, Tamalika Banerjee
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Atomic Structure and Dynamics of Unusual and Wide-Gap Phase-Change Chalcogenides: A GeTe2 Case Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Takeshi Usuki, Chris J. Benmore, Andrey Tverjanovich, Sergei Bereznev, Maxim Khomenko, Anton Sokolov, Daniele Fontanari, Koji Ohara, Maria Bokova, Mohammad Kassem, Eugene Bychkov