Abstract
Diffusion from a layer of gallium phosphide GaP deposited onto a silicon surface is studied. After diffusion, the silicon samples are examined using the Van der Pauw method and a scanning electron microscopy in order to determine the concentration distribution of impurity atoms of phosphorus and gallium.
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Funding
The study was carried out as a part of the scientific project-54 (fundamental project) 21101836.
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Zikrillaev, N.F., Koveshnikov, S.V., Turekeev, K.S. et al. Diffusion of Phosphorus and Gallium from a Deposited Layer of Gallium Phosphide into Silicon. Phys. Solid State 64, 587–594 (2022). https://doi.org/10.1134/S1063783422110154
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DOI: https://doi.org/10.1134/S1063783422110154