Abstract
In this work, H3BO3 and Bi2O3 with the ratio 3:2 were melted at 750 °C and then quenched in water to produce B-Bi-O frit, which was sintered and co-doped with TiO2-0.60Nb2O5-0.50ZnO varistor ceramics. It is found that B-Bi-O frit can reduce the sintering temperature and improve the electrical properties of TiO2 ceramics. The best comprehensive electrical properties with the nonlinear coefficient up to 8.9, the breakdown voltage down to 4.92 V/mm, the relative dielectric constant of 4.47*105 and the leakage current of 0.102 mA are achieved by sintering the ceramics doped with 3 wt% B-Bi-O frit at 1400 °C. XRD analysis shows that B-Bi-O frit is an amorphous phase, and no second phase can be found in ceramics after the frit is doped. SEM morphologies display that B-Bi-O frit is beneficial to decrease the porosity while increase the grain size, and EDS mapping further presents no elements segregate on the grain boundary. XPS spectra demonstrate the coexistence of Ti3+ ions, Ti4+ ions and oxygen vacancies in TiO2 ceramics. As a result, it can be concluded that the enhancement of the electrical properties of TiO2 ceramics is mainly attributed to the following aspects: on the one hand, B-Bi-O frit helps to produce liquid phase sintering, which would reduce the porosity while increase grain size and promote solid solution of Nb2O5 and ZnO in TiO2 ceramic. On the other hand, B and Bi elements can also act as acceptor dopants in TiO2 ceramic to further promote grain semi-conductivity and increase grain boundary barrier height.
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Acknowledgements
The authors appreciate Wang Hui from the Analytical & Testing Center of Sichuan University for her help with SEM and EDS characterization.
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This research was supported by the Fundamental Research Funds for the Central Universities of People’s Republic of China.
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Huang, X., Liao, X., Pu, Y. et al. The enhanced electrical properties of TiO2-Nb2O5-ZnO varistor by sintering with the pre-synthesized B-Bi-O frit. J Electroceram 51, 1–11 (2023). https://doi.org/10.1007/s10832-023-00312-2
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DOI: https://doi.org/10.1007/s10832-023-00312-2