The advent of nanotechnology has led to the inevitable need for miniaturization in optoelectronic devices. To achieve this goal, materials with low thickness, conductivity, and transparency, as well as a larger active area, must be developed. Experiments have proven that the opto-electrical properties of transition metal dichalcogenides (TMD)/graphene combinations are highly tunable. On the other hand, a notable feature of light when reflecting from an interface is its spatial and angular displacements. The “lateral shift” in the incident plane, referred to as the Goos–Hanchen (GH) shift, has garnered significant interest among researchers owing to its extensive range of applications. In our work, an atomically thin TMD/graphene/TMD sandwich heterostructure is proposed, and its spatial and angular GH shifts are investigated. The theoretical analysis includes various TMD materials such as MoSe₂, MoS₂, WSe₂, and WS₂. A detailed study of the effects of wavelength, polarization, incident angle, and number of TMD layers in symmetric and asymmetric structures suggests that this hybrid can serve as an ultrathin broadband tunable sensor in optical devices.