Abstract
The features of the formation of a hidden lead-silicate insulating layer in silicon substrates are considered. To do this, ions of molecular oxygen and lead are sequentially implanted into them in an atomic ratio of 75 : 1 then annealing is carried out at a temperature of 1150°C in an environment of dry oxygen. The distribution of the implanted ions in the experimental samples is recorded by the method of secondary ion mass spectrometry. It is shown that the latent insulator is formed in the process of the spinodal decomposition of a solid solution of SiOx–PbOx in the form of a three-layer structure. Its middle part is silicon dioxide doped with lead ions and the side parts consist of a lead-silicate phase. A relaxation diffusion model is proposed to analyze the distribution profile of lead.
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ACKNOWLEDGMENTS
The analytical equipment of the “Diagnostics of Micro- and Nano Structures” Shared Use Center was used in the study.
Funding
This study was carried out as part of a state task of the RF Ministry of Science and Higher Education assigned to Valiev Institute of Physics and Technology, Russian Academy of Sciences on topic no. FFNN-2022-0018.
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Buchin, E.Y., Denisenko, Y.I. Ion-Beam Synthesis of a Hidden Lead-Silicate Layer in Single-Crystal Silicon. Glass Phys Chem 49, 535–537 (2023). https://doi.org/10.1134/S1087659623600564
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DOI: https://doi.org/10.1134/S1087659623600564