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Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3

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Abstract

The atomic radial distribution function of vitreous AgGeAsSe3, obtained based on the experimental intensity curves taken with monochromatic copper and molybdenum radiation, is interpreted using a fragmentary model in the entire ordering region (~9 Å). It is shown that the glass consists of selenium and selenium-arsenic tetrahedra with germanium and silver atoms inside. The spatial arrangement of such tetrahedra in glass within the ordering region is similar to their arrangement in the GeAsSe and GeSe2 structures. It is proposed that the “openwork” structure of the fragments of these structures allows the movement of Ag+ ions (ionic conductivity) in vitreous AgGeAsSe3. Fragments of the structure of the ion-conducting compound Ag2Se are not found in the studied glass.

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Authors and Affiliations

  1. Voronezh State University, 394018, Voronezh, Russia

    K. B. Aleinikova & E. N. Zinchenko

  2. Institute of Natural Sciences and Mathematics, Ural Federal University, 620002, Yekaterinburg, Russia

    N. V. Melnikova

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  1. K. B. Aleinikova
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  2. E. N. Zinchenko
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  3. N. V. Melnikova
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Correspondence to K. B. Aleinikova, E. N. Zinchenko or N. V. Melnikova.

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Aleinikova, K.B., Zinchenko, E.N. & Melnikova, N.V. Fragmentary Model of the Atomic Structure of the Ion-Conducting Semiconductor Glass AgGeAsSe3. Glass Phys Chem 49, 421–430 (2023). https://doi.org/10.1134/S1087659623600497

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