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Mechanism of Stimulated Raman Scattering in Silicon Doped with Helium-Like Donors

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Abstract

Silicon doped with neutral helium-like magnesium donors is studied theoretically as an active medium in the THz frequency range. The inversion mechanism in Si:Mg under optical excitation does not have the necessary efficiency due to the presence of fast relaxation processes. On the contrary, the mechanism of stimulated Raman scattering (SRS) is less sensitive to relaxation times and allows the lasing spectrum to be tuned. An important feature of doubly charged donors is the presence of two Stokes shifts in the system, which significantly expands the range of laser frequencies. Calculations show that the combined use of uniaxial crystal strain and excitation quantum energy tuned in the range of 95‒105 meV (23‒25.5 THz) will make it possible to obtain Raman lasing in the frequency band of 7‒33 meV (~1.5‒8 THz).

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Notes

  1. The dispersion of this distribution is determined either by the width of the impurity line, or, in the case of pulsed excitation, by the duration of this pulse, if the energy uncertainty related to the finite pulse duration exceeds the line width.

  2. Since the values of the energies of excited states, starting from 2р0 and higher, practically do not differ for all donors, the values of the parameters a and b will also not differ.

  3. For deep impurity centers, this model position may not hold well.

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This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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  1. Institute for Physics of Microstructures, Russian Academy of Sciences, 603087, Afonino, Nizhny Novgorod oblast, Russia

    R. Kh. Zhukavin, V. V. Tsyplenkov & V. N. Shastin

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  1. R. Kh. Zhukavin
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  2. V. V. Tsyplenkov
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  3. V. N. Shastin
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Correspondence to R. Kh. Zhukavin.

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Translated by I. Ulitkin

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Zhukavin, R., Tsyplenkov, V. & Shastin, V. Mechanism of Stimulated Raman Scattering in Silicon Doped with Helium-Like Donors. Bull. Lebedev Phys. Inst. 50 (Suppl 9), S1015–S1021 (2023). https://doi.org/10.3103/S1068335623210121

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