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Study of 589nm GaInP quantum well semiconductor laser on Ge/SiGe substrate

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Abstract

Since there are few research reports on semiconductor lasers in the yellow wavelength, this manuscript proposes the design of a semiconductor laser with an excitation wavelength of 589 nm, using a Ge/SiGe substrate, combined with GaInP quantum wells with high Ga composition and AlGaInP series of materials as the main structural layer of the laser. Simulation software is used for feasibility verification, and the effects of different parameters are discussed to optimize the device structure. The effects of interfacial states and electron leakage on the device characteristics are discussed, and a solution to the electron leakage problem is given. The results show that under the influence of the interfacial state, the threshold current of the 589-nm laser reaches 3.3 A, and the output power is about 0.6 W. Through optimization, by adding two layers of AlP electron-blocking layer with a thickness of 5 nm between the P-type cladding and the upper waveguide layer, the concentration of electrons in the P-type cladding layer can be reduced to 1.53 × 1015 cm−3, the threshold current of the device is reduced to 2.13 A, and the output power reaches 0.87 W.

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Data availability

The datasets generated and/or analyzed during the current study are available from the corresponding author on request.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (No. 62374133) and the Scientific Research Program Funded by Shaanxi Provincial Education Department (No. 22JP051). Thanks to Synopsys for providing the trial version of RSoft simulation tool.

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Authors and Affiliations

  1. College of Automation and Information Engineering, Xi’an University of Technology, Xi’an, 710048, China

    Jianan Xie, Tao Lin, Cailin Wang, Jiahao Shi, Chaoyang Xie & Duo Liang

  2. Shannxi Key Laboratory of Complex System Control and Intelligent Information Processing, Xi’an University of Technology, Xi’an, 710048, China

    Tao Lin

  3. School of Physics, Northwest University, Xi’an, 710069, China

    Yupeng Duan

Authors
  1. Jianan Xie
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  2. Tao Lin
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  3. Cailin Wang
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  4. Jiahao Shi
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  5. Chaoyang Xie
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  6. Duo Liang
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Contributions

Jianan Xie wrote the manuscript and prepared the figures, while Tao Lin and Cailin Wang proposed the device design and gave comments on the manuscript. Jiahao Shi, Chaoyang Xie, Duo Liang summarize the simulation data. Yupeng Duan revised the grammar in the manuscript. All authors reviewed the manuscript.

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Correspondence to Tao Lin.

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Xie, J., Lin, T., Wang, C. et al. Study of 589nm GaInP quantum well semiconductor laser on Ge/SiGe substrate. Appl. Phys. B 130, 26 (2024). https://doi.org/10.1007/s00340-023-08164-y

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