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Forming free bipolar resistive switching in SiOx-based flexible MIM devices

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Abstract

SiOx-based resistive switching (RS) cells composed of Cu as the active electrode were fabricated on flexible muscovite mica flakes using DC and radio frequency magnetron sputtering techniques. In one set of the metal–insulator–metal (MIM) devices, Cu-nanoparticles (Cu-NPs) have been embedded into the SiOx layer and their RS properties have been compared with the devices without the Cu-NPs. All the devices exhibited forming free bipolar RS characteristics. Room temperature DC current–voltage (I–V) measurements suggest improved resistance windows for the Cu-NP-embedded MIM devices. Analysis of the DC I–V characteristics suggests electrochemical metallization-driven RS, where current conduction follows Ohmic and space-charge-limited conductions mechanism for low and high resistance states, respectively. The resistance windows of the Cu-NPs-embedded MIM structures tested for multiple cycles do not degrade under different bending conditions, indicating their mechanical robustness for potential flexible device applications.

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Acknowledgements

We acknowledge SERB (no. CRG/2021/000811) for partial financial support provided to this study, and the Central Research Facility (CRF) of the Indian Institute of Technology Kharagpur for various characterization facilities.

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Authors and Affiliations

  1. Materials Science Centre, Indian Institute of Technology Kharagpur, Kharagpur, 721302, India

    Biswajit Jana, Pallavi Gaur & Ayan Roy Chaudhuri

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  1. Biswajit Jana
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  2. Pallavi Gaur
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  3. Ayan Roy Chaudhuri
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Correspondence to Ayan Roy Chaudhuri.

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Jana, B., Gaur, P. & Roy Chaudhuri, A. Forming free bipolar resistive switching in SiOx-based flexible MIM devices. Bull Mater Sci 47, 21 (2024). https://doi.org/10.1007/s12034-023-03094-z

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