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Synthesis of Nanocrystalline CdS:Sn Film and Study on Its Optical, Structural, and Electrical Characteristics

  • SURFACE, THIN FILMS
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Abstract

A film of Cd0.8Sn0.2S (CdS:Sn) was deposited on a glass slide employing a screen printing setup and was sintered in air at 350°C. The structure, surface morphology, composition, optical, photoluminescence and electrical properties of the film were studied. X-ray diffraction analysis showed the hexagonal structure of the film with the predominant growth of the (101) plane. The composition of the film was determined by energy dispersive X-ray spectroscopy. The optical transmittance spectrum of the film was studied in the wavelength range 300–900 nm. The optical band gap (direct) of the nanocrystalline CdS:Sn film was found to be 2.44 eV. The photolumenescence spectra of CdS:Sn film include a sharp band at 520 nm and a broad band at 610 nm. The temperature dependent DC conductivity of the film was found to obey Arrhenius law with activation energy of 0.15 eV. Doping CdS with tin may be further applied for effective use of CdS:Sn films as buffer/window layers in solar cells.

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This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Kumar, V., Agrwal, A., Sharma, D.K. et al. Synthesis of Nanocrystalline CdS:Sn Film and Study on Its Optical, Structural, and Electrical Characteristics. Crystallogr. Rep. 68, 1230–1234 (2023). https://doi.org/10.1134/S1063774523600151

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  • DOI: https://doi.org/10.1134/S1063774523600151

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