Abstract
Here, we elucidate the influence of active layer thickness and defect density on the photovoltaic performance of lead-free CsSn0.5Ge0.5I3 perovskite solar cells (PSCs). We explained the dependence of FF and JSC on the perovskite layer thickness and defect density in terms of the extraction rate and generation rate, identifying the role of charge extraction and recombination in the operation of perovskite solar cells. Our finding revealed that when active layer thickness was varied, the best performance was achieved with a thickness of 0.4 µm, resulting in a PCE of 12.79%, open circuit voltage (VOC) of 0.807 V, FF of 77.42%, and JSC of 20.47 mA/cm2 for the CsSn0.5Ge0.5I3-based PSC. Additionally, the impact of defect density on PSC performance was assessed using the Shockley–Read–Hall recombination model. The degradation of photovoltaic performance was evident as trap density increased, with the PCE dropping from 14.38 to 5.47%. VOC experienced a significant reduction of 40%, while JSC and FF showed drops of 25.3% and 14.6%, respectively. The study emphasizes the importance of optimizing active layer thickness and minimizing trap densities to enhance the performance of lead-free PSCs.
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The data supporting the findings of this study are available on request from the corresponding author.
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S. Y. Carried out the simulation work and wrote the original draft of the manuscript, S. K. G. analyzed the data and arranged the resources to conduct the research; and C. M. S. N. conceptualized the idea, supervised the work and finalized the manuscript.
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Yadav, S., Gupta, S.K. & Negi, C.M.S. Comprehensive Analysis of Lead-Free Perovskite (CsSn0.5Ge0.5I3) Solar Cell: Impact of Active Layer Thickness and Defect Density. Braz J Phys 54, 67 (2024). https://doi.org/10.1007/s13538-024-01444-8
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DOI: https://doi.org/10.1007/s13538-024-01444-8