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Guiding diamond spin qubit growth with computational methods

Jonathan C. Marcks, Mykyta Onizhuk, Nazar Delegan, Yu-Xin Wang (王语馨), Masaya Fukami, Maya Watts, Aashish A. Clerk, F. Joseph Heremans, Giulia Galli, and David D. Awschalom
Phys. Rev. Materials 8, 026204 – Published 28 February 2024

Abstract

The nitrogen-vacancy (NV) center in diamond, a well-studied, optically active spin defect, is the prototypical system in many state-of-the-art quantum sensing and communication applications. In addition to the enticing properties intrinsic to the NV center, its diamond host's nuclear and electronic spin baths can be leveraged as resources for quantum information rather than considered solely as sources of decoherence. However, current synthesis approaches result in stochastic defect spin positions, reducing the technology's potential for deterministic control and yield of NV spin bath systems, as well as scalability and integration with other technologies. Here, we demonstrate the use of theoretical calculations of electronic central spin decoherence as an integral part of an NV spin bath synthesis workflow, providing a path forward for the quantitative design of NV center-based quantum sensing systems. We use computationally generated coherence data to characterize the properties of single NV center qubits across relevant growth parameters to find general trends in coherence time distributions dependent on spin bath dimensionality and density. We then build a maximum likelihood estimator with our theoretical model, enabling the characterization of a test sample through NV T2* measurements. Finally, we explore the impact of dimensionality on the yield of strongly coupled electron spin systems. The methods presented herein are general and applicable to other qubit platforms that can be appropriately simulated.

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  • Received 13 August 2023
  • Accepted 31 January 2024

DOI:https://doi.org/10.1103/PhysRevMaterials.8.026204

©2024 American Physical Society

Physics Subject Headings (PhySH)

Quantum Information, Science & Technology

Authors & Affiliations

Jonathan C. Marcks1,2,*, Mykyta Onizhuk3,1,*, Nazar Delegan2,1, Yu-Xin Wang (王语馨)1, Masaya Fukami1, Maya Watts2,1, Aashish A. Clerk1, F. Joseph Heremans2,1, Giulia Galli1,3,2, and David D. Awschalom1,4,2,†

  • 1Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA
  • 2Center for Molecular Engineering and Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, USA
  • 3Department of Chemistry, University of Chicago, Chicago, Illinois 60637, USA
  • 4Department of Physics, University of Chicago, Chicago, Illinois 60637, USA

  • *These authors contributed equally to this work.
  • Corresponding author: awsch@uchicago.edu

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Vol. 8, Iss. 2 — February 2024

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