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Effect of copper doping on the lifetime of the upper 5T2 laser level of the iron ion in ZnSe

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Abstract

The effect of copper doping of ZnSe:Fe crystals on the kinetics of luminescence of iron ions is investigated in this work. It has been discovered that doping with copper leads to a sharp decrease in the radiative recombination of iron ions at a temperature of 77 K. The obtained results are explained based on the model of nonradiative relaxation of iron ions due to Auger recombination with the participation of electrons in the conduction band.

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References

  1. S.B. Mirov, V.V. Fedorov et al., IEEE J. Sel. Top. Quantum Electron. 21(1), 292 (2015)

    Article  ADS  Google Scholar 

  2. S. Vasilyev, I. Moskalev, M. Mirov et al., Proc. of SPIE 10193, 101930U (2017)

    Article  Google Scholar 

  3. S.V. Kurashkin, O.V. Martynova, D.V. Savin et al., Phys. Lett. 16, 075801 (2019)

    Google Scholar 

  4. A.E. Dormidonov, K.N. Firsov, E.M. Gavrishchuk et al., Appl. Phys. B 122, 211 (2016)

    Article  ADS  Google Scholar 

  5. M.P. Frolov, Yu.V. Korostelin, V.I. Kozlovsky, Y.K. Skasyrsky, Laser Phys. 29(8), 085004 (2019)

    Article  ADS  Google Scholar 

  6. J.W. Evans, T.R. Harris, B.R. Reddy, K.L. Schepler, P.A. Berry, J. Lumin. 188, 541 (2017)

    Article  Google Scholar 

  7. Y.-Y. Li, Ju. You-Lun, T.-Y. Dai et al., Chinese Phys. Lett. 36, 044201 (2019)

    Article  ADS  Google Scholar 

  8. Y.-Y. Li et al., Chinese Phys. B 28, 064203 (2019)

    Article  ADS  Google Scholar 

  9. T. Li, C. Sun, C. Xue et al., Opt. Mater. 114, 110989 (2021)

    Article  Google Scholar 

  10. A. Lancaster, G. Cook, S.A. McDaniel, J. Evans, P.A. Berry, J.D. Shephard, A.K. Kar, Appl. Phys. Lett. 107, 031108 (2015)

    Article  ADS  Google Scholar 

  11. J.J. Adams, C. Bibeau, R.H. Page et al., Opt. Lett. 24(23), 1720 (1999)

    Article  ADS  Google Scholar 

  12. V.I. Akimov, A.A. Voronov, V.I. Kozlovsky et al., Quantum Electron. 36(4), 299 (2006)

    Article  ADS  Google Scholar 

  13. V.V. Fedorov et al., IEEE J. Quantum Electron. 42(9), 907 (2006)

    Article  ADS  Google Scholar 

  14. N.N. Il’ichev, G.A. Bufetova, È.S. Gulyamova et al., Quantum Electron. 49(12), 1175 (2019)

    Article  ADS  Google Scholar 

  15. S.G. Ayling, J.W. Allen, J. Phys. C 20, 4251 (1987)

    Article  ADS  Google Scholar 

  16. N.N. Il’ichev, A.A. Gladilin, È.S. Gulyamova et al., Quantum Electron. 50(8), 730 (2020)

    Article  ADS  Google Scholar 

  17. N. Il’ichev, A. Sidorin, È. Gulyamova et al., J. Lumin. 239, 118363 (2021)

    Article  Google Scholar 

  18. N.N. Il’ichev, V.P. Kalinushkin, È.S. Gulyamova et al., Quantum Electron. 53(5), 395 (2023)

    Google Scholar 

  19. N. Myong, V.V. Fedorov, S.B. Mirov, L.E. Wenger, J. Lumin. 132(3), 600 (2012)

    Article  Google Scholar 

  20. A. Gladilin, S. Chentsov, O. Uvarov, S. Nikolaev, V. Krivobok, V. Kalinushkin, J. Appl. Phys. 126(1), 015702 (2019)

    Article  ADS  Google Scholar 

  21. M. Yamaguchi, T. Shigematsu, Jpn. J. Appl. Phys. 17(2), 335 (1978)

    Article  ADS  Google Scholar 

  22. P.J. Dean, B.J. Fitzpatrick, R.N. Bhargava, Phys. Rev. B 26(4), 2016 (1982)

    Article  ADS  Google Scholar 

  23. D.J. Chadi, K.J. Chang, Appl. Phys. Lett. 55(6), 575 (1989)

    Article  ADS  Google Scholar 

  24. V.N. Abakumov, V.L. Perel, I.N. Yassievich, Nonradiative Recombination in Semiconductors (North-Holland, Amsterdam, 1991)

    Google Scholar 

Download references

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Authors and Affiliations

Authors

Contributions

V. P. wrote the main manuscript. M. S. created the programm for data analysis. V. P., M.S. and N. N. analysed the obtained results. M. I. ans S. A. provided the photoluminescence experiments. E. M., V. B. and D. V. prepared the samples and provided the Hall effect experiments. M. V. provided the cathodoluminescence experiments. All authors reviewed the manuscript.

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Correspondence to M. S. Storozhevykh.

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Kalinushkin, V.P., Storozhevykh, M.S., Studenikin, M.I. et al. Effect of copper doping on the lifetime of the upper 5T2 laser level of the iron ion in ZnSe. Appl. Phys. B 130, 46 (2024). https://doi.org/10.1007/s00340-024-08187-z

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  • DOI: https://doi.org/10.1007/s00340-024-08187-z

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