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Thermodynamic Modeling of the CVD Process in the Ni–Si–C–H System

  • PHYSICOCHEMICAL ANALYSIS OF INORGANIC SYSTEMS
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Abstract

Oxygen-free ceramics are promising for use in various technologies owing to their unique properties. Additions of metals or metal compounds significantly expand the application range of the ceramics. Therefore, methods for the synthesis of such composites are being actively developed. One way to manufacture such films is chemical vapor deposition (CVD). Thermodynamic modeling offers a means to choose the process parameters. In this work, thermodynamic modeling of the CVD process in the Ni–Si–C–H system, where nickelocene and silane were precursors, was carried out. The results can be useful for film materials design based on SiC and nickel-containing phases.

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Notes

  1. The phase assemblage is the set of condensed phases in thermodynamic equilibrium.

  2. The isomers were also taken into account if existed.

  3. This system was studied in the temperature range 100–980°С because of the lack of thermodynamic data on the Ni7Si13 phase at higher temperatures.

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Funding

The work was supported by the Ministry of Science and Higher Education of the Russian Federation (project No. 121031700314-5).

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Authors and Affiliations

  1. Nikolaev Institute of Inorganic Chemistry, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    V. A. Shestakov & M. L. Kosinova

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  1. V. A. Shestakov
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  2. M. L. Kosinova
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Correspondence to V. A. Shestakov.

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Translated by O. Fedorova

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Shestakov, V.A., Kosinova, M.L. Thermodynamic Modeling of the CVD Process in the Ni–Si–C–H System. Russ. J. Inorg. Chem. (2024). https://doi.org/10.1134/S0036023623602441

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