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Optical Probing Position Sensitivity Characteristics of a Photodetecting Element Based on High-Resistivity CdSe Layers

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Inorganic Materials Aims and scope

Abstract—

The output voltage, position sensitivity, and spectral sensitivity of a photodetecting element based on high-resistivity photosensitive CdSe layers have been shown for the first time to decrease hyperbolically with increasing layer thickness (in the range 6–60 μm) and increase linearly with increasing input electric current. The high position and spectral sensitivity found in this study (70.8 mV/(mm μA mW) and 375 mV/(μA mW), respectively), which considerably exceeds that of cadmium telluride layers, demonstrate that high-resistivity CdSe layers have considerable potential as a material of position-sensitive photodetectors.

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This work was supported by ongoing institutional funding. No additional grants to carry out or direct this particular research were obtained.

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Authors and Affiliations

  1. Shevchenko State University, MD-3300, Tiraspol, Moldova

    V. I. Chukita & A. V. Voronov

  2. Moscow State University, 119991, Moscow, Russia

    M. V. Chukichev

  3. Moscow Institute of Radio Engineering, Electronics, and Automation, Russian Technological University, 119454, Moscow, Russia

    V. S. Feshchenko

Authors
  1. V. I. Chukita
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  2. A. V. Voronov
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  3. M. V. Chukichev
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  4. V. S. Feshchenko
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Correspondence to V. I. Chukita.

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Translated by O. Tsarev

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Chukita, V.I., Voronov, A.V., Chukichev, M.V. et al. Optical Probing Position Sensitivity Characteristics of a Photodetecting Element Based on High-Resistivity CdSe Layers. Inorg Mater 59, 1242–1249 (2023). https://doi.org/10.1134/S0020168523110031

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