Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs | IEEE Journals & Magazine | IEEE Xplore

IEEE Account

Purchase Details

Profile Information

Need Help?

A not-for-profit organization, IEEE is the world's largest technical professional organization dedicated to advancing technology for the benefit of humanity.
© Copyright 2024 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.